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  5. Oxidation/Diffusion Device
  6. ◆◇◆ Small Vertical Experimental Furnace for R&D TVF-110 ◆◇◆

◆◇◆ Small Vertical Experimental Furnace for R&D TVF-110 ◆◇◆

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TVF-110

last updated:Oct 12, 2024

テルモセラ・ジャパン 本社
テルモセラ・ジャパン 本社
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Low-cost minimum necessary configuration (manual control) applicable as tubular furnace, diffusion furnace, and thermal CVD.

Manual lift vertical experimental furnace for small substrates from small samples to 3-inch wafers. A low-cost version of a vertical furnace ideal for basic experiments in university and corporate research labs. 【Applications】 ◉ Heat treatment for semiconductors, solar cells, fuel cells, electronic substrates, etc. ◉ Basic experiments: simple heat treatment experiments such as vertical tubular furnaces, oxidation diffusion furnaces, LPCVD, etc.

    Oxidation/Diffusion Device
縦型拡散炉_iPROS_550.jpg

◆◇◆ Small Vertical Experimental Furnace for R&D TVF-110 ◆◇◆

縦型拡散炉_iPROS_550.jpg
縦型拡散炉_iPROS_550.jpg 炉芯管部_iPROS_550.jpg サセプタ,上下昇降機構部_iPROS_550.jpg 温度コントローラ_iPROS_550.jpg
  • Thermosera Japan_Small Experimental Vertical Furnace TVF-110
  • Special site - Product/service details - https://pr.mono.ipros.com/thermocera/product/

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basic information

**Main Specifications** - Maximum furnace temperature: 1200℃, maximum sample temperature: 950℃ - Small sample size: from a few millimeters to 3-inch wafer size - Number of substrates: approximately 1 to 3 - Manual lift quartz susceptor: with stop position scale and clamp - Furnace core tube: Φ100 x Φ95 x 470L mm - Lifting: manual rotating handle - Temperature control: PID programmable temperature controller - Thermocouples: 2 pairs of K-type thermocouples x1 (for control and over-temperature), K-type bare wire (for furnace core temperature measurement)

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Applications/Examples of results

◉ Heat treatment of semiconductors, solar cells, fuel cells, electronic substrates, etc. ◉ Basic experiments: simple heat treatment experiments using vertical tubular furnaces, oxidation diffusion furnaces, LPCVD, etc.

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4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

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MiniLab-LT26A Small Vacuum Deposition Device

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MiniLab-LT26A Small Vacuum Deposition Device

★☆★☆【MiniLab-026】Flexible Thin Film Experimental Device for R&D★☆★☆

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This is a flexible thin-film experimental device for R&D that achieves minimal waste, compact size, simple operation, and high cost performance by integrating the necessary minimum modules and controllers into a 19" compact rack with a Plug&Play feel. It supports magnetron sputtering (up to 3 sources) or resistance heating evaporation (metal sources up to 2, organic materials x4), and can be equipped with a substrate heating stage, allowing for the production of annealing devices and RF etching. A glove box storage type is also available (specifications to be discussed). We offer a wide range of optional components that can be flexibly customized. ◉ Φ2 inch magnetron cathode (up to 3 sources) ◉ Resistance heating evaporation source filament, crucible, boat type (up to 4 poles with automatic switching via controller) ◉ Organic evaporation cell: 1cc or 5cc ◉ Can be equipped with a glove box (optional, specifications to be discussed) ◉ Other options: Simultaneous film deposition, HiPIMS, automatic film deposition controller, custom substrate holders, load lock, substrate rotation/heating/cooling, and many other options available. *Please first contact us with your required specifications, and we will configure the system according to your needs.

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MiniLab-060 Thin Film Experiment Device

Multi-functional Sputtering System 【MiniLab-S060】

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4 cathodes with Φ2 inch mounted Simultaneous film formation: 3-component simultaneous film formation (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed from the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coat) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

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テルモセラ・ジャパン

テルモセラ・ジャパン 本社

Industrial Electrical Equipment

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【Endless possibility_thermal engineering...】 Our company sells vacuum thin film devices for semiconductor and electronic device fundamental research, ultra-high temperature heaters for CVD substrate heating, experimental furnaces, temperature measurement equipment, and more. To meet the endless demand for "heat," which is indispensable in any era, and to respond to various requests in the field of fundamental technology development, we aim to introduce the latest equipment and contribute to research and development in Japan.

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