Modeling of High Voltage AlGaN/GaN HEMT

basic information

<Main Features> ■General-purpose 2D/3D finite element analysis and design software for semiconductor devices ■Applicable to almost all device design and analysis except for semiconductor lasers ■Can be used for the design of devices made from silicon and compounds <Diverse Physical Models and Functions> ■Current-voltage (I-V) characteristics ■Two-dimensional distribution of potential, electric field, and current ■Two-dimensional distribution of hot carrier temperature in fluid dynamics models ■Two-dimensional distribution of lattice temperature used in thermal transport models ■Band diagrams under various bias conditions ■Results of AC small-signal response analysis at arbitrary frequency ranges ■Subbands of quantum wells using a carrier mixing model ■Two-dimensional distribution of impurity occupancy and density trapped at deep levels in semiconductors ■Two-dimensional optical field distribution of optical devices such as photodetectors ■Current dependence of the self-emission spectrum of LEDs ■FDTD interface <Interface> ■Standard tools for structural input and result display ■Described in a proprietary scripting language, executable from GUI or command line ■Program control possible via batch files and scripting language

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Applications/Examples of results

Analysis of the device structure of high breakdown voltage AlGaN/GaN HEMTs.