Achieving double-sided grinding of SiC! Double-sided grinding processing.
In power devices such as SiC (silicon carbide) and GaN (gallium nitride), which are expected to see market expansion in the future, cost reduction is an important issue. Among these, we would like to introduce a processing case that achieved cost reduction through a method different from conventional processing processes. [Polishing Results] ■ Surface roughness < 0.5nm (subsequent process CMP) ■ TTV < 2μm / Warp < 10μm ■ Achieved double-sided grinding of SiC by using the high-speed pressure grinding machine 'EJD-6BY' and the fixed grinding stone 'MAD Plate'. *For more details, please refer to the PDF document or feel free to contact us.
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【Device Specifications】 ■Material/Dimensions: SiC (Silicon Carbide/2 inch) ■Applications: Power devices, high-frequency devices, optical devices ■Required Precision: Surface roughness < 1nm, TTV < 2μm/Warp < 10μm ■Device Model: EJD-6BY ■Device Specifications: Double-sided lapping machine ■Polishing Method: Fixed abrasive MAD Plate, ultra-fine diamond abrasive *For more details, please refer to the PDF document or feel free to contact us.
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For more details, please refer to the PDF document or feel free to contact us.
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Our company is committed to providing cutting-edge lap technology based on the know-how of diamond wrapping that our sister companies in the United States and various European countries have accumulated over many years. All of our staff sincerely look forward to serving customers who seek higher precision and quality in wrapping process technology.