Wafer process-compatible full-scale production system for annealing, sintering, and polyimide curing, supporting high throughput with mini-batch and rapid cooling mechanism.
Uniform heating in a clean vacuum. Ideal for processes requiring high cleanliness and low oxygen concentration. Vertical quartz tube annealing device. Compatible with wafers up to 8 inches and various substrates. Automation and clean system achieved through the use of a CtO-C system. Stable temperature distribution performance from medium to high temperatures, with a rapid processing mechanism for short cycle times. A multifunctional heat treatment device capable of processing not only in vacuum but also in various atmospheres (inert, oxidation, reduction).
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basic information
Based on compatibility with Si wafers, we offer flexible customization for various substrates and applications. We support multiple uses including sapphire, quartz, glass, and PCB. A wide range of atmospheres is available, including vacuum (low vacuum and high vacuum), inert (N2, Ar), oxidation, and reduction (H2, forming gas), allowing for selection from a wealth of proven functionalities.
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Applications/Examples of results
Si semiconductor Wiring film annealing, high melting point electrode annealing, electrode film alloying, hydrogen annealing Polyimide cure Compound semiconductor Electrode film annealing, alloying, transparent electrode annealing, hydrogen annealing Small display substrate Poly-Si annealing, oxide film annealing, organic film drying and firing MEMS Wiring film and electrode film annealing, organic film firing
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Company information
Shinko Seiki, as a technology-driven manufacturer, leverages the numerous know-how accumulated particularly in the field of vacuum equipment to deliver innovative products that meet user needs. In recent years, the company has also been challenging cutting-edge fields such as electronics and new materials, aiming to develop truly valuable hardware and software through the advancement of distinctive technologies and their organic integration.
![[SH High-Temperature Substrate Heater] For PVD, CVD Max 1100℃](https://image.mono.ipros.com/public/product/image/f14/408104013/IPROS72020025232961980617.jpeg?w=280&h=280)
