List of Annealing furnace products
- classification：Annealing furnace
1～45 item / All 85 items
We provide comprehensive support from design to manufacturing and maintenance!
- Contract manufacturing
It won't break even after 1 million repetitions! A mat switch with reliable operation, high durability, and low price. Suitable for options in machine tools as well. Please consult us about delivery t...
- Sensors
Compact, space-saving, energy-efficient! High-performance ultra-high temperature experimental furnace for R&D.
- Annealing furnace
◇◆◇ nanoPVD-S10A Magnetron Sputtering Device ◇◆◇
This is an RF/DC magnetron sputtering device for research and development. Despite its high performance and multifunctionality, it fits into the limited space of a laboratory with its compact size and easy operation via a 7-inch front touch panel. ● Achievable pressure: 5x10^-5 Pa (*fastest 30 minutes up to 1x10^-4 Pa!) ● Film uniformity: ±3% ● Various options: up/down rotation, heater, cathode for magnetic materials, and more ● 3-source cathode + 3 MFC systems, with additional RF/DC power supply, allowing for versatile applications such as multilayer films and simultaneous deposition. - Insulating films - Conductive films - Compounds, etc. 【Main Features】 ◉ Compatible substrates: 2" (up to 3 sources) or 1" (1 source) ◉ 2" cathode x up to 3 sources ◉ Easy operation via touch panel with PLC automatic program control ◉ MFC high-precision APC automatic process pressure control ◉ Up to 3 MFC systems ◉ USB port for Windows PC connection, capable of creating and saving recipes for up to 1000 layers and 50 films. Live data logging on PC. ◉ Vacuum system: TMP + RP (*dry pump option) ◉ Substrate rotation, up/down elevation, heating (Max 500℃) ◉ Quartz crystal film thickness monitor/controller
CVD, PVD (evaporation, sputtering, etc.) high vacuum, ultra-high temperature plate heater for wafer and small chip heating with excellent uniformity and reproducibility.
- Other semiconductor manufacturing equipment
- Annealing furnace
- CVD Equipment
◇◆◇ nanoPVD-S10A Magnetron Sputtering Device ◇◆◇
This is an RF/DC magnetron sputtering device for research and development. Despite its high performance and multifunctionality, it fits into the limited space of a laboratory with its compact size and easy operation via a 7-inch front touch panel. ● Achievable pressure: 5x10^-5 Pa (*fastest 30 minutes up to 1x10^-4 Pa!) ● Film uniformity: ±3% ● Various options: up/down rotation, heater, cathode for magnetic materials, and more ● 3-source cathode + 3 MFC systems, with additional RF/DC power supply, allowing for versatile applications such as multilayer films and simultaneous deposition. - Insulating films - Conductive films - Compounds, etc. 【Main Features】 ◉ Compatible substrates: 2" (up to 3 sources) or 1" (1 source) ◉ 2" cathode x up to 3 sources ◉ Easy operation via touch panel with PLC automatic program control ◉ MFC high-precision APC automatic process pressure control ◉ Up to 3 MFC systems ◉ USB port for Windows PC connection, capable of creating and saving recipes for up to 1000 layers and 50 films. Live data logging on PC. ◉ Vacuum system: TMP + RP (*dry pump option) ◉ Substrate rotation, up/down elevation, heating (Max 500℃) ◉ Quartz crystal film thickness monitor/controller
![[Nanofurnace] BWS-NANO Thermal CVD ...](https://image.mono.ipros.com/public/product/image/0d0/2000191194/IPROS99314670218218380543.jpeg?w=280&h=280){kind=small}
Hot Wall Type Thermal CVD Equipment: A compact, high-performance CVD device ideal for fundamental research.
- CVD Equipment
- Annealing furnace
- Heating device
◇◆◇ nanoPVD-S10A Magnetron Sputtering Device ◇◆◇
This is an RF/DC magnetron sputtering device for research and development. Despite its high performance and multifunctionality, it fits into the limited space of a laboratory with its compact size and easy operation via a 7-inch front touch panel. ● Achievable pressure: 5x10^-5 Pa (*fastest 30 minutes up to 1x10^-4 Pa!) ● Film uniformity: ±3% ● Various options: up/down rotation, heater, cathode for magnetic materials, and more ● 3-source cathode + 3 MFC systems, with additional RF/DC power supply, allowing for versatile applications such as multilayer films and simultaneous deposition. - Insulating films - Conductive films - Compounds, etc. 【Main Features】 ◉ Compatible substrates: 2" (up to 3 sources) or 1" (1 source) ◉ 2" cathode x up to 3 sources ◉ Easy operation via touch panel with PLC automatic program control ◉ MFC high-precision APC automatic process pressure control ◉ Up to 3 MFC systems ◉ USB port for Windows PC connection, capable of creating and saving recipes for up to 1000 layers and 50 films. Live data logging on PC. ◉ Vacuum system: TMP + RP (*dry pump option) ◉ Substrate rotation, up/down elevation, heating (Max 500℃) ◉ Quartz crystal film thickness monitor/controller
Sputter Cathode and Co-evaporation Source Mixed Thin Film Experimental Device: Metal deposition, organic deposition, and sputter cathode installed in a compact frame.
- Sputtering Equipment
- Evaporation Equipment
- Annealing furnace
□■□【MiniLab-080】Flexible Thin Film Experimental Device□■□ Can be configured flexibly according to requirements for processes such as deposition, sputtering, EB deposition, and organic deposition.
The ML-080, with a volume of 80 liters and dimensions of 400(W)x400(D)x570(H)mm, is composed of a D-type box chamber. It has the same configuration as the 070 model but features a taller chamber, which extends the TS distance adjustment range and improves film uniformity during deposition on large-diameter substrates, making it an optimal model for vacuum deposition. It is a higher-end model than the ML-070, which can also add a load lock mechanism. Like the 070, it is compact yet supports a wide range of applications including resistance heating deposition (for metals, insulators, and organic materials), EB deposition, RF/DC/PulseDC compatible magnetron sputtering, RIE plasma etching, and annealing. - Maximum substrate size: Φ11 inch - Resistance heating deposition sources x up to 4 units - Organic deposition sources x up to 4 units - Magnetron sputtering cathodes x 4 units - Electron beam deposition - Substrate heating stage (standard 500℃, Max 1000℃) - *Plasma etching / <30W soft etching *Plasma etching can be installed in both the main chamber and the load lock chamber.
Storage-compatible glove box PVD flexible thin film experimental device, featuring a tall chamber with a height of 570mm, contributes to improved uniformity during deposition.
- Evaporation Equipment
- Sputtering Equipment
- Annealing furnace
Vacuum deposition device □■□【MiniLab-LT080A】□■□ Capable of various deposition applications such as resistance heating, organic deposition, and electron beam deposition.
The ML-080, with a volume of 80 liters and dimensions of 400(W)x400(D)x570(H)mm, is composed of a D-type box chamber. It has the same configuration as the 070 model but features a taller chamber, resulting in a longer TS distance adjustment range and improved film uniformity during deposition on large-diameter substrates, making it an optimal model for vacuum deposition. It is a higher-end model than the ML-070, which can also accommodate a load lock mechanism. Like the 070, it is compact yet supports a wide range of applications including resistance heating deposition (for metals, insulators, and organic materials), electron beam deposition, RF/DC/PulseDC compatible magnetron sputtering, RIE plasma etching, and annealing. - Maximum substrate size: Φ11 inch - Resistance heating deposition source x up to 4 units - Organic deposition source x up to 4 units - Magnetron sputtering cathode x 4 units - Electron beam deposition - Substrate heating stage (standard 500℃, Max 1000℃) - *Plasma etching / <30W soft etching *Plasma etching can be installed in both the main chamber and the load lock chamber.
Due to its modular embedded design, it is possible to flexibly assemble dedicated machines according to the required film formation methods. A compact thin-film experimental device that can accommodat...
- Sputtering Equipment
- Evaporation Equipment
- Annealing furnace
Vacuum deposition device □■□【MiniLab-LT080A】□■□ Capable of various deposition applications such as resistance heating, organic deposition, and electron beam deposition.
The ML-080, with a volume of 80 liters and dimensions of 400(W)x400(D)x570(H)mm, is composed of a D-type box chamber. It has the same configuration as the 070 model but features a taller chamber, resulting in a longer TS distance adjustment range and improved film uniformity during deposition on large-diameter substrates, making it an optimal model for vacuum deposition. It is a higher-end model than the ML-070, which can also accommodate a load lock mechanism. Like the 070, it is compact yet supports a wide range of applications including resistance heating deposition (for metals, insulators, and organic materials), electron beam deposition, RF/DC/PulseDC compatible magnetron sputtering, RIE plasma etching, and annealing. - Maximum substrate size: Φ11 inch - Resistance heating deposition source x up to 4 units - Organic deposition source x up to 4 units - Magnetron sputtering cathode x 4 units - Electron beam deposition - Substrate heating stage (standard 500℃, Max 1000℃) - *Plasma etching / <30W soft etching *Plasma etching can be installed in both the main chamber and the load lock chamber.
6 to 8 inch ultra-high temperature wafer annealing equipment, a high-performance machine that widely accommodates various purposes from research and development to small-scale production.
- Annealing furnace
◇◆◇ nanoPVD-S10A Magnetron Sputtering Device ◇◆◇
This is an RF/DC magnetron sputtering device for research and development. Despite its high performance and multifunctionality, it fits into the limited space of a laboratory with its compact size and easy operation via a 7-inch front touch panel. ● Achievable pressure: 5x10^-5 Pa (*fastest 30 minutes up to 1x10^-4 Pa!) ● Film uniformity: ±3% ● Various options: up/down rotation, heater, cathode for magnetic materials, and more ● 3-source cathode + 3 MFC systems, with additional RF/DC power supply, allowing for versatile applications such as multilayer films and simultaneous deposition. - Insulating films - Conductive films - Compounds, etc. 【Main Features】 ◉ Compatible substrates: 2" (up to 3 sources) or 1" (1 source) ◉ 2" cathode x up to 3 sources ◉ Easy operation via touch panel with PLC automatic program control ◉ MFC high-precision APC automatic process pressure control ◉ Up to 3 MFC systems ◉ USB port for Windows PC connection, capable of creating and saving recipes for up to 1000 layers and 50 films. Live data logging on PC. ◉ Vacuum system: TMP + RP (*dry pump option) ◉ Substrate rotation, up/down elevation, heating (Max 500℃) ◉ Quartz crystal film thickness monitor/controller
Maximum operating temperature 2000℃ Semi-automatic control Ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace
- Heating device
- Annealing furnace
- Electric furnace
【MiniLab-125】 Multi-target sputtering system (compatible with Φ8") equipped with a 1000℃ heater stage (SiC coating)! Compact size!
Multifunctional Multi-Sputtering Device (Compatible with Φ8inch Substrates) - Triple-source simultaneous deposition + Single-source Pulse DC sputtering - Flexible arrangement of RF500W and DC850W power supplies to the three-source cathodes (Source 1, 2, 3) - Equipped with a 5KW Pulse DC power supply → Used with dedicated cathode (4) - Substrate heating stage Max 800℃ (SiC-coated heater can achieve Max 1000℃) - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Main chamber RIE etching stage RF300W - LL chamber <30W low-power controlled soft etching - Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch panel or Windows PC operation: All operations can be performed via touch panel/PC without dispersing control. - Equipment installation dimensions: 1,960(W) x 1,100(D) x 1,700(H) mm - Multi-chamber configurations are also possible. ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc., can also be configured.
Tabletop small-sized experimental furnace - space-saving with a maximum operating temperature of 2000℃! We also manufacture metal furnaces for reducing atmospheres.
- Heating device
- Electric furnace
- Annealing furnace
【MiniLab-125】 Multi-target sputtering system (compatible with Φ8") equipped with a 1000℃ heater stage (SiC coating)! Compact size!
Multifunctional Multi-Sputtering Device (Compatible with Φ8inch Substrates) - Triple-source simultaneous deposition + Single-source Pulse DC sputtering - Flexible arrangement of RF500W and DC850W power supplies to the three-source cathodes (Source 1, 2, 3) - Equipped with a 5KW Pulse DC power supply → Used with dedicated cathode (4) - Substrate heating stage Max 800℃ (SiC-coated heater can achieve Max 1000℃) - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Main chamber RIE etching stage RF300W - LL chamber <30W low-power controlled soft etching - Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch panel or Windows PC operation: All operations can be performed via touch panel/PC without dispersing control. - Equipment installation dimensions: 1,960(W) x 1,100(D) x 1,700(H) mm - Multi-chamber configurations are also possible. ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc., can also be configured.
Maximum operating temperature 2000℃ Semi-automatic control Ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace
- Heating device
- Annealing furnace
- Electric furnace
Multi-functional Sputtering System 【MiniLab-S060】
4 cathodes with Φ2 inch mounted Simultaneous film formation: 3-component simultaneous film formation (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed from the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coat) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
6 to 8 inch ultra-high temperature wafer annealing equipment, a high-performance machine that widely supports various purposes from research and development to small-scale production.
- Annealing furnace
- Heating device
- Electric furnace
【MiniLab-125】 Multi-target sputtering system (compatible with Φ8") equipped with a 1000℃ heater stage (SiC coating)! Compact size!
Multifunctional Multi-Sputtering Device (Compatible with Φ8inch Substrates) - Triple-source simultaneous deposition + Single-source Pulse DC sputtering - Flexible arrangement of RF500W and DC850W power supplies to the three-source cathodes (Source 1, 2, 3) - Equipped with a 5KW Pulse DC power supply → Used with dedicated cathode (4) - Substrate heating stage Max 800℃ (SiC-coated heater can achieve Max 1000℃) - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Main chamber RIE etching stage RF300W - LL chamber <30W low-power controlled soft etching - Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch panel or Windows PC operation: All operations can be performed via touch panel/PC without dispersing control. - Equipment installation dimensions: 1,960(W) x 1,100(D) x 1,700(H) mm - Multi-chamber configurations are also possible. ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc., can also be configured.
A semi-custom-made thin film experimental device that can be assembled with the desired configuration for processes such as sputtering, EB (electron beam), and annealing.
- Evaporation Equipment
- Sputtering Equipment
- Annealing furnace
★【MiniLab-060】Flexible Thin Film Experimental Device★ Thermosera Japan
Compact/Space-saving, High-spec 60ℓ volume multi-thin film experimental device that can accommodate various applications by integrating thin film modules such as evaporation, sputtering, EB, and annealing. Compact/Space-saving, High-spec thin film experimental device. Combinations possible from the following evaporation sources: - Resistance heating evaporation source x up to 4 - Organic evaporation source x up to 4 - Electron beam evaporation - 2-inch magnetron sputtering cathode x 4 - Plasma etching: can be installed in either the main chamber or the load lock chamber 【Small Footprint/Space-saving】 - Dual rack type (MiniLab-060): 1200(W) x 590(D)mm 【Excellent Operability/Intuitive Operation Screen】 Windows PC or 7” touch panel. Easy operation regardless of skill level, with maximum safety considerations.
Max 1000℃, maximum 3 systems for MFC, APC pressure control, compatible with 4" or 6" substrates, high vacuum annealing equipment (<5 × 10^-7 mbar)
- Annealing furnace
◇◆◇ nanoPVD-S10A Magnetron Sputtering Device ◇◆◇
This is an RF/DC magnetron sputtering device for research and development. Despite its high performance and multifunctionality, it fits into the limited space of a laboratory with its compact size and easy operation via a 7-inch front touch panel. ● Achievable pressure: 5x10^-5 Pa (*fastest 30 minutes up to 1x10^-4 Pa!) ● Film uniformity: ±3% ● Various options: up/down rotation, heater, cathode for magnetic materials, and more ● 3-source cathode + 3 MFC systems, with additional RF/DC power supply, allowing for versatile applications such as multilayer films and simultaneous deposition. - Insulating films - Conductive films - Compounds, etc. 【Main Features】 ◉ Compatible substrates: 2" (up to 3 sources) or 1" (1 source) ◉ 2" cathode x up to 3 sources ◉ Easy operation via touch panel with PLC automatic program control ◉ MFC high-precision APC automatic process pressure control ◉ Up to 3 MFC systems ◉ USB port for Windows PC connection, capable of creating and saving recipes for up to 1000 layers and 50 films. Live data logging on PC. ◉ Vacuum system: TMP + RP (*dry pump option) ◉ Substrate rotation, up/down elevation, heating (Max 500℃) ◉ Quartz crystal film thickness monitor/controller
Max 1000℃, MFC maximum 3 systems, APC pressure control, compatible with 4" or 6" substrates, high vacuum annealing equipment (<5 × 10^-7 mbar)
- Annealing furnace
- Heating device
- Electric furnace
【MiniLab-125】 Multi-target sputtering system (compatible with Φ8") equipped with a 1000℃ heater stage (SiC coating)! Compact size!
Multifunctional Multi-Sputtering Device (Compatible with Φ8inch Substrates) - Triple-source simultaneous deposition + Single-source Pulse DC sputtering - Flexible arrangement of RF500W and DC850W power supplies to the three-source cathodes (Source 1, 2, 3) - Equipped with a 5KW Pulse DC power supply → Used with dedicated cathode (4) - Substrate heating stage Max 800℃ (SiC-coated heater can achieve Max 1000℃) - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Main chamber RIE etching stage RF300W - LL chamber <30W low-power controlled soft etching - Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch panel or Windows PC operation: All operations can be performed via touch panel/PC without dispersing control. - Equipment installation dimensions: 1,960(W) x 1,100(D) x 1,700(H) mm - Multi-chamber configurations are also possible. ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc., can also be configured.
Compact and space-saving! Ideal for research and development, flexible configuration for purposes such as deposition, sputtering, and annealing.
- Evaporation Equipment
- Sputtering Equipment
- Annealing furnace
□■□【MiniLab-080】Flexible Thin Film Experimental Device□■□ Can be configured flexibly according to requirements for processes such as deposition, sputtering, EB deposition, and organic deposition.
The ML-080, with a volume of 80 liters and dimensions of 400(W)x400(D)x570(H)mm, is composed of a D-type box chamber. It has the same configuration as the 070 model but features a taller chamber, which extends the TS distance adjustment range and improves film uniformity during deposition on large-diameter substrates, making it an optimal model for vacuum deposition. It is a higher-end model than the ML-070, which can also add a load lock mechanism. Like the 070, it is compact yet supports a wide range of applications including resistance heating deposition (for metals, insulators, and organic materials), EB deposition, RF/DC/PulseDC compatible magnetron sputtering, RIE plasma etching, and annealing. - Maximum substrate size: Φ11 inch - Resistance heating deposition sources x up to 4 units - Organic deposition sources x up to 4 units - Magnetron sputtering cathodes x 4 units - Electron beam deposition - Substrate heating stage (standard 500℃, Max 1000℃) - *Plasma etching / <30W soft etching *Plasma etching can be installed in both the main chamber and the load lock chamber.
Compact and space-saving! Ideal for research and development. Flexible configuration for purposes such as deposition, sputtering, and annealing.
- Evaporation Equipment
- Sputtering Equipment
- Annealing furnace
◇◆◇ nanoPVD-S10A Magnetron Sputtering Device ◇◆◇
This is an RF/DC magnetron sputtering device for research and development. Despite its high performance and multifunctionality, it fits into the limited space of a laboratory with its compact size and easy operation via a 7-inch front touch panel. ● Achievable pressure: 5x10^-5 Pa (*fastest 30 minutes up to 1x10^-4 Pa!) ● Film uniformity: ±3% ● Various options: up/down rotation, heater, cathode for magnetic materials, and more ● 3-source cathode + 3 MFC systems, with additional RF/DC power supply, allowing for versatile applications such as multilayer films and simultaneous deposition. - Insulating films - Conductive films - Compounds, etc. 【Main Features】 ◉ Compatible substrates: 2" (up to 3 sources) or 1" (1 source) ◉ 2" cathode x up to 3 sources ◉ Easy operation via touch panel with PLC automatic program control ◉ MFC high-precision APC automatic process pressure control ◉ Up to 3 MFC systems ◉ USB port for Windows PC connection, capable of creating and saving recipes for up to 1000 layers and 50 films. Live data logging on PC. ◉ Vacuum system: TMP + RP (*dry pump option) ◉ Substrate rotation, up/down elevation, heating (Max 500℃) ◉ Quartz crystal film thickness monitor/controller
Introduction of various experimental devices for research and development in semiconductors, electronic devices, fuel cells, displays, and thin film experiments.
- Sputtering Equipment
- Evaporation Equipment
- Annealing furnace
◇◆◇ nanoPVD-S10A Magnetron Sputtering Device ◇◆◇
This is an RF/DC magnetron sputtering device for research and development. Despite its high performance and multifunctionality, it fits into the limited space of a laboratory with its compact size and easy operation via a 7-inch front touch panel. ● Achievable pressure: 5x10^-5 Pa (*fastest 30 minutes up to 1x10^-4 Pa!) ● Film uniformity: ±3% ● Various options: up/down rotation, heater, cathode for magnetic materials, and more ● 3-source cathode + 3 MFC systems, with additional RF/DC power supply, allowing for versatile applications such as multilayer films and simultaneous deposition. - Insulating films - Conductive films - Compounds, etc. 【Main Features】 ◉ Compatible substrates: 2" (up to 3 sources) or 1" (1 source) ◉ 2" cathode x up to 3 sources ◉ Easy operation via touch panel with PLC automatic program control ◉ MFC high-precision APC automatic process pressure control ◉ Up to 3 MFC systems ◉ USB port for Windows PC connection, capable of creating and saving recipes for up to 1000 layers and 50 films. Live data logging on PC. ◉ Vacuum system: TMP + RP (*dry pump option) ◉ Substrate rotation, up/down elevation, heating (Max 500℃) ◉ Quartz crystal film thickness monitor/controller
High-precision control of ±3℃ × multi-stage control, a continuous furnace that automates mass production in a space-saving manner.
- Heating device
- Annealing furnace
- Drying Equipment
Achieving high-precision temperature control of ±1.5℃.
- Heat Treatment Drying Equipment
- Annealing furnace
- Drying Equipment
Expansion to advanced packages: Processing is possible on a 510×515mm substrate.
- Sputtering Equipment
- Etching Equipment
- Annealing furnace
![[Sintering Material Compatible] Vac...](https://image.mono.ipros.com/public/product/image/43427/IPROS15682486374808681803.png?w=280&h=280){kind=small}
Large substrate-compatible vacuum and reducing atmosphere sintering furnace │ Capable of multi-purpose processing such as soldering, sintering bonding, and Cu via firing.
- Annealing furnace
- Reflow Equipment
![[Case Study of Annealing Equipment]...](https://image.mono.ipros.com/public/product/image/2009035/IPROS17844705013903780260.png?w=280&h=280){kind=small}
We will introduce examples of annealing equipment suitable for small-lot production of various types and large components!
- Annealing furnace
A Comprehensive Explanation of the Benefits and Applications of Formic Acid Reduction (Manufactured by Unitec Japan)
- Annealing furnace
Know-how in designing and manufacturing various devices! Powerful support with abundant knowledge and experience.
- Annealing furnace
- Heating device
- controller
Utilizing hydrogen gas, stainless steel bright treatment is possible!
- stainless
- Annealing furnace
- Electric furnace
Heat recovery type, low running cost, hot air dryer for painting.
- Other painting machines
- Drying Equipment
- Annealing furnace
Heat recovery type, low running cost, paint drying oven.
- Other painting machines
- Drying Equipment
- Annealing furnace
Dryer Dry Tech Price Information Public Site Now Available
We have launched a price information website for the painting-specific dryer, Drytech. The site features product information and sizes focused on standard models of Drytech, both front and single-door types, as well as custom products and options, including performance and price information. We have disclosed price information to facilitate a quicker process from consideration and decision-making to implementation. Please make use of it.
Supports tray transport! Achieves excellent substrate temperature distribution and gas flow method.
- Annealing furnace
- Heating device
Maximum substrate heating temperature of 1000℃! Reduces element loss specific to the substrate surface heating process!
- Heating device
- Annealing furnace
Usable from R&D to mass production! Vertical furnace with automatic transport compatible with 3 to 6-inch wafers.
- Annealing furnace
The furnace dimensions are 3.5m wide, 3.5m high, and 7.0m deep. It is capable of heat treatment for large workpieces!
- Heating device
- Industrial Furnace
- Annealing furnace
Notice of participation in 'THERMOTEC 2026 9th International Industrial Furnace and Related Equipment Exhibition' from September 9 (Wednesday) to September 11 (Friday), 2026.
NARITA Manufacturing Co., Ltd. will be exhibiting as part of the NARITA Group at the 'THERMOTEC 2026 9th International Industrial Furnace and Related Equipment Exhibition' held at Tokyo Big Sight. This exhibition, themed "Environment, Heat, Future - Let's Think Together About Efficient Heat Technology and a Sustainable Future," is an international exhibition where advanced industrial furnaces and heat technologies come together. We plan to showcase three products that can be used with hydrogen, including a compact variable control valve, an orifice meter, and a needle valve. We sincerely look forward to your visit.
No warm-up/cool-down time. High-quality continuous annealing processing is possible.
- Annealing furnace
- Other processing machines
By achieving ultra-high temperature treatment and excellent temperature uniformity, batch processing of boule ingots and wafers is possible, minimizing defects and dislocations.
- Annealing furnace
- Other semiconductor manufacturing equipment
- Other metal materials
Due to lamp heating, RTP and RTCVD processing is possible! Quartz tube-type chamber.
- Annealing furnace
Turbo pump compatible! Low temperature (1100°C) / high temperature (1300°C) pyrometer.
- Annealing furnace
Supports a maximum substrate size of 156mm x 156mm! Compatible with vacuum or atmospheric transport systems and can be equipped with a load lock.
- Annealing furnace
Rapid cooling mechanism after annealing! Introducing the high-speed heat treatment equipment from Annealsys.
- Annealing furnace
We will introduce a case where "Eco Keeper" was applied to an annealing furnace that was experiencing severe heat release and environmental deterioration!
- Other safety and hygiene products
- others
- Annealing furnace
Kaneko Chemical Cleaning Agent Product Line
- Annealing furnace
A quartz tube type annealing device commonly used for alloying and reducing resistance of electrode films in compound semiconductors. It is a high-temperature processing type equipped with a rapid coo...
- Annealing furnace
- Heating device
Supports small-diameter wafers (4 inches) and niche processes for compound semiconductors. Compatible with both crystal processes and wafer processes (alloying and electrode annealing).
- Annealing furnace
- Electric furnace
- Other surface treatment equipment