Pressurized RTA device

Maximum substrate heating temperature of 1000℃! Reduces element loss specific to the substrate surface heating process!

The "Pressure RTA Device" is a product that can handle processes from vacuum to pressurization (0.9 MPaG). The heating source is a halogen lamp, and the heating rate can reach up to 150°C/sec, achieving excellent substrate temperature distribution and gas flow methods. This device can be used for applications such as semiconductors, MEMS, and electronic components, enabling high-speed thermal oxidation, crystallization, and annealing treatments on the substrate surface. 【Features】 ■ Reduces element loss specific to the heating process ■ Capable of handling processes from vacuum to pressurization (0.9 MPaG) ■ Enables high-speed thermal oxidation, crystallization, and annealing treatments on the substrate surface ■ Achieves excellent substrate temperature distribution and gas flow methods ■ Compatible with tray transport ■ Multi-chamber specifications can also be manufactured *For more details, please refer to the PDF document or feel free to contact us.

Annealing furnaceHeating device