Supports tray transport! Achieves excellent substrate temperature distribution and gas flow method.
The "RTA device" is a product that can handle processes from vacuum to pressurized processes (0.9 MPaG). It enables high-speed thermal oxidation, crystallization, and annealing treatment of the substrate surface. It achieves excellent substrate temperature distribution and gas flow methods. It can be used for semiconductors, as well as MEMS and electronic components. 【Features】 ■ Capable of handling processes from vacuum to pressurized processes (0.9 MPaG) ■ Enables high-speed thermal oxidation, crystallization, and annealing treatment of the substrate surface ■ Achieves excellent substrate temperature distribution and gas flow methods ■ Compatible with tray transport ■ Customizable for multi-chamber specifications and various made-to-order designs *For more details, please refer to the PDF document or feel free to contact us.
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basic information
【Specifications】 ■Substrate size: Maximum φ12 inches ■Reaction gases: O2, N2, H2O (optional) ■Substrate heating temperature: Up to 1000℃ (substrate surface) ■Heating source: Halogen lamp ■Heating rate: Maximum 150℃/sec ■Vacuum exhaust: DP ■Control operation ・Control: PLC ・Operation: Touch panel or PC ■Data logging: External memory or PC ■Substrate transport: Atmospheric transport robot, cooling stage *For more details, please refer to the PDF document or feel free to contact us.
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【Applications】 ■Semiconductors ■MEMS ■Electronic components *For more details, please refer to the PDF document or feel free to contact us.
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Japan Create has been challenging cutting-edge technologies to respond to the diversification of the semiconductor industry with high precision, labor-saving, and miniaturization. We seek infinite possibilities in high technology and create reliable know-how that matches user needs with our uniqueness. We will continue to strive towards high-level technology.