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  1. Home
  2. Industrial Electrical Equipment
  3. テルモセラ・ジャパン 本社
  4. Vacuum deposition device □■□【MiniLab-LT080A】□■□ Capable of various deposition applications such as resistance heating, organic deposition, and electron beam deposition.
PRODUCT NEW
  • Jul 28, 2026
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Jul 28, 2026

Vacuum deposition device □■□【MiniLab-LT080A】□■□ Capable of various deposition applications such as resistance heating, organic deposition, and electron beam deposition.

テルモセラ・ジャパン テルモセラ・ジャパン 本社
The ML-080, with a volume of 80 liters and dimensions of 400(W)x400(D)x570(H)mm, is composed of a D-type box chamber. It has the same configuration as the 070 model but features a taller chamber, resulting in a longer TS distance adjustment range and improved film uniformity during deposition on large-diameter substrates, making it an optimal model for vacuum deposition. It is a higher-end model than the ML-070, which can also accommodate a load lock mechanism. Like the 070, it is compact yet supports a wide range of applications including resistance heating deposition (for metals, insulators, and organic materials), electron beam deposition, RF/DC/PulseDC compatible magnetron sputtering, RIE plasma etching, and annealing. - Maximum substrate size: Φ11 inch - Resistance heating deposition source x up to 4 units - Organic deposition source x up to 4 units - Magnetron sputtering cathode x 4 units - Electron beam deposition - Substrate heating stage (standard 500℃, Max 1000℃) - *Plasma etching / <30W soft etching *Plasma etching can be installed in both the main chamber and the load lock chamber.
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MiniLab-080_2026.pdf[2814163]

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□■□【MiniLab-080】Flexible Thin Film Experiment Device□■□

Flexible configuration available upon request for processes such as evaporation, sputtering, and EB. Adopts a tall chamber with a height of 570mm, contributing to improved uniformity during evaporation.

The ML-080, composed of a D-type box chamber with a volume of 80 liters and dimensions of 400(W)x400(D)x570(H)mm, features a higher chamber compared to the 060 model, resulting in a longer TS distance adjustment range and improved film uniformity during deposition on large-diameter substrates. It is an optimal model for vacuum deposition and is a higher-end version of the ML-060, which can also accommodate a load lock mechanism. Like the 060, it is compact yet supports a wide range of applications including resistance heating deposition (for metals, insulators, and organic materials), EB deposition, RF/DC/Pulse DC compatible magnetron sputtering, RIE plasma etching, and annealing. - Maximum substrate size: Φ10 inch - Resistance heating deposition sources: up to 4 sources - Organic deposition sources: up to 4 sources - Magnetron sputtering cathodes: 4 sources - Electron beam deposition - Substrate heating stage (standard 500℃, max 1000℃) - *Plasma etching / <30W soft etching *Plasma etching can be installed in both the main chamber and the load lock chamber.

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<30W Low power - Etching control precision 10mW Achieving damage-free and delicate etching processing.

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◆ANNEAL◆ Wafer Annealing Equipment

Max 1000℃, maximum 3 systems for MFC, APC pressure control, compatible with 4" or 6" substrates, high vacuum annealing equipment (<5 × 10^-7 mbar)

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High-performance, cost-effective RF/DC magnetron sputtering system for research and development.

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Annealing furnace "Mini-BENCH-prism ultra-high temperature experimental furnace"

Maximum operating temperature 2000℃ Semi-automatic control Ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace

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Tabletop small-sized experimental furnace - space-saving with a maximum operating temperature of 2000℃! We also manufacture metal furnaces for reducing atmospheres.

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Annealing furnace "MiniLab-WCF Ultra-High Temperature Wafer Annealing Furnace"

6 to 8 inch ultra-high temperature wafer annealing equipment, a high-performance machine that widely supports various purposes from research and development to small-scale production.

◾️ Max 2000℃ ◾️ Effective heating range: Φ6 to Φ8 inch single leaf type, or batch type (multi-stage 5-sheet cassette) ◾️ Heater control: 1 zone or 2 zones (cascade control) ◾️ Heater material: ・C/C composite: Φ6 to Φ8 inch ・PG coated high purity graphite: Φ6 to Φ8 inch ◾️ Operating atmosphere: ・Vacuum (1x10-2 Pa), inert gas (Ar, N2) ◾️ PLC semi-automatic operation ・Automatic sequence control for vacuum/purge cycle and venting ・Fully automatic operation (optional) ・Touch panel operation, allowing centralized management without dispersed operations. ◾️ Process pressure control ・APC control (MFC flow, or automatic opening adjustment valve PID loop control) ・Maximum 3 systems of MFC flow automatic control, or manual adjustment of float meter/needle valve ◾️ PLOT screen graph display, CSV data output

  • Annealing furnace
  • Heating device
  • Electric furnace

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Wafer Scale Graphene Synthesis Device [nanoCVD-WGP]

Plasma CVD equipment compatible with wafer sizes of Φ3 inch and Φ4 inch. Rapid synthesis of clean, high-quality graphene while suppressing impurities.

Plasma CVD equipment compatible with wafer sizes of Φ3 inch and Φ4 inch. Rapid synthesis of clean, high-quality graphene while suppressing impurities. Usable with both thermal CVD and low to high temperature plasma CVD methods. The mass flow gas supply system and substrate heating heater can be customized according to your requirements.

  • CVD Equipment

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