Sputtering Equipment Multifunctional Sputter Device MiniLab-S060A

Two thin film experimental devices are connected by a load lock mechanism. Different film deposition devices (sputtering - evaporation, etc.) are seamlessly connected via the load lock. With Moorfield's unique load lock system, connections to the process chamber on the left, right, and rear are also possible (see photo below). 1. MiniLab-E080A (Evaporation Device) - EB evaporation: 7cc crucible x 6 - Resistance heating evaporation x 2 - Organic evaporation limit x 2 2. MiniLab-S060A (Sputtering Device) - Φ2" Magnetron cathode x 4 for simultaneous sputtering - Compatible with both DC and RF power supplies 3. Load Lock Chamber - Plasma etching stage In the load lock chamber, plasma cleaning of the substrate surface is performed using the "RF/DC substrate bias stage," and the company's unique "soft etching" technology allows for a <30W low-power, damage-free plasma etching stage. This enables delicate etching processes that are prone to damage, such as 2D (removal of resists like PMMA), graphene delamination, and etching of Teflon substrates. (*This can also be installed in the main chamber stage.)

Sputter Cathode and Co-evaporation Source Mixed Thin Film Experimental Device. Metal deposition, organic deposition, and sputter cathode are installed in a compact frame. A resistance heating evaporation source (for metal deposition), an organic evaporation source (for organic materials), and magnetron sputtering (for metals and insulating materials) are installed in the chamber, allowing for various thin film experimental setups within a single chamber. ◉ Three combinations available: 1. Sputter Cathode + Resistance Heating Evaporation Source x2 2. Sputter Cathode + Organic Evaporation Source x2 3. Sputter Cathode + Resistance Heating Source x1 + Organic Evaporation Source x1 (*DC sputtering only) 【Specifications】 ◉ Compatible substrates: up to Φ4 inches ◉ Sputtering: 2" cathode x up to 3 sources ◉ Vacuum deposition: Resistance heating evaporation (up to 2), organic evaporation (up to 4) ◉ 7" touch panel operation with PLC automatic process control ◉ APC automatic pressure control ◉ 1 line of Ar gas (standard) + expandable with N2, O2 ◉ Connects to a Windows PC via USB for recipe creation and storage. Data logging on PC ◉ Various other options available ◉ Easy operation with a 7" touch panel and PLC automatic process control

4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

High vacuum compatible with a variety of heater material options. Can be applied to PVD (sputtering, deposition, EB, etc.), high-temperature vacuum annealing, high-temperature analysis substrate stages, and more. Custom-made to meet various specifications upon request. 【Features】 ● Easy replacement of the pre-heater wire ● Easy installation and maintenance (M6 stud bolts, supports) 【Compatible Substrate Sizes】 ◉ Φ1 inch to Φ6 inch 【Standard Accessories】 ● Thermocouple: wire type with alumina insulation sleeve ● Mounting stud bolts 【Options】 ● Non-standard heater wires (Nb, Mo, Pt/Re, WRe, etc.) ● Substrate holding clips ● Mounting brackets ● Substrate holders ● Tapped hole processing for holder installation ● Change of top plate material (PBN, quartz, carbon, Inconel, etc.) ● Additional thermocouples for overheating ● Base flange, vacuum introduction terminal