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  1. Home
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  3. Manufacturing and processing machinery
  4. Semiconductor Manufacturing Equipment
  5. CVD Equipment
  6. Wafer Scale Graphene Synthesis Device [nanoCVD-WGP]

Wafer Scale Graphene Synthesis Device [nanoCVD-WGP]

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nanoCVD-WGP

last updated:Aug 15, 2026

テルモセラ・ジャパン 本社
テルモセラ・ジャパン 本社
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Plasma CVD equipment compatible with wafer sizes of Φ3 inch and Φ4 inch. Rapid synthesis of clean, high-quality graphene while suppressing impurities.

Plasma CVD equipment compatible with wafer sizes of Φ3 inch and Φ4 inch. Rapid synthesis of clean, high-quality graphene while suppressing impurities. Usable with both thermal CVD and low to high temperature plasma CVD methods. The mass flow gas supply system and substrate heating heater can be customized according to your requirements.

    CVD Equipment
System-front.jpg

Wafer Scale Graphene Synthesis Device [nanoCVD-WGP]

System-front.jpg
System-front.jpg Chamber-interior.jpg
  • https://moorfield.co.uk/products/nanocvd-wgp/
  • Special site - Product/service details - https://pr.mono.ipros.com/thermocera/product/

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basic information

【Example of Device Configuration】 - Substrate: Cu, Ni, etc. (film, foil) - Raw materials: CH4, C2H4, solids (PMMA), etc. - Process gases: H2, Ar, N2, etc. - Substrate size: Φ4 inch - 150W, 13.56MHz RF power supply - Substrate heating from 500℃ to a maximum of 1100℃ - High-precision process gas pressure APC control - Mass flow controller with a maximum of 4 channels

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Applications/Examples of results

◆Main Application Areas◆ - University educational institutions - Basic and applied research at various research institutions - Material development - Application in other advanced device development, etc.

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News about this product(43)

Reference photo of the ultra-high temperature substrate heating mechanism (hot stage).

Hot Stage [Substrate Heating Mechanism] Ultra-High Temperature Substrate Heating Stage Max 1800℃ _ Φ2 to Φ6 inch

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High-temperature substrate heating mechanism for vacuum thin film processes, used for the development of semiconductors, electronic devices, etc. It can be utilized for various film deposition experiments on silicon substrates, sapphire substrates, compound substrates, and others. Selection of elements and materials according to ultra-high temperature substrate heating conditions (Max 1800°C) for vacuum equipment such as CVD and sputtering is possible. ◉ Compatible with ultra-high vacuum, inert gas, O2, and various process gas atmospheres. ◉ Substrate up/down/rotation mechanism and RF/DC bias application possible. ◉ Selection of elements according to the atmosphere: NiCr, Inconel, Tungsten, Graphite, CC composite, Graphite (SiC coating, PBN coating) CC composite (PG coating) ◉ Various vacuum flange connections: ICF, VF ◉ Thermocouple included ◉ Other options: Motor controller, temperature control unit, transbox.

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Product image of Mini-BENCH small experimental furnace (Φ2 inch specification)

□■□■【Mini-BENCH】Ultra High Temperature Tabletop Experimental Furnace Max 2000℃ □■□■

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Tabletop Small-Size Experimental Furnace - Space-Saving, Maximum Operating Temperature 2000℃ ◆ Equipment Configuration ◆ We will propose the desired configuration according to your budget and purpose. (A) Minimum Configuration: Chamber + Temperature Control Unit (B) Above Minimum Configuration (A) + Vacuum Exhaust System (Pump, Gauge, Valve, Vacuum Piping) ◉ Cylindrical Heater: For sintering samples in crucibles (for solid, powder, granule, and pellet-shaped samples) ◉ Flat Heater: For sintering Φ1" to Φ6" wafers and small chip samples ◆ Basic Specifications ◆ - Heater: C/C Composite (Carbon Furnace), Tungsten (Metal Furnace) - Insulation Material: Graphite Felt, Tungsten/Molybdenum - Temperature Control: Programmable Temperature Controller, C Thermocouple - Achievable Vacuum Level: 1x10-2 Pascal (*for an empty furnace) - Power Supply Specifications: AC200V 50/60HZ Three-Phase 6KVA - Cooling Water: 3L/min, 0.4Mpa 25-30℃ ◆ Control Box Specifications ◆ - Programmable Temperature Controller - DC Power Supply Unit or External Transformer Box - Current and Voltage Meters - Heater Circuit Trip Switch - Main Power Switch ◆ Options ◆ - Vacuum Exhaust System - Custom Crucibles and Others

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★nano BenchTop Series Thin Film Experiment Device★

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Equipped with various conditions necessary to create a highly uniform "high-quality" thin film required in research and development settings. The nano series is a high-performance device that condenses functionality into a compact body. It employs a robust and highly airtight stainless steel chamber that ensures a high vacuum environment and sufficient T/S adjustment distance, which are essential elements for high-quality film formation with minimal defects. Additionally, all models share the IntelliDep software, which allows anyone to operate the system regardless of their level of expertise, thanks to its intuitive and easy-to-understand touch panel interface. 【nano Benchtop Compact Thin Film Experimental Equipment】 ◉ nanoPVD-S10A: RF/DC Magnetron Sputtering Device ◉ nanoPVD-T15A: Organic Film and Metal Film Deposition Device ◉ nanoPVD-ST15A: Mixed Deposition and Sputtering Composite Thin Film Experimental Device ◉ ANNEAL: Wafer Annealing Device ◉ nanoCVD: Graphene/CNT Synthesis Device ◉ nanoEM: High Vacuum EM Coater * For other detailed specifications, please contact us.

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nanoPVD-ST15A

☆★☆ Spatter and Vapor Deposition Source Combined Film Formation Device 【nanoPVD-ST15A】 ☆★☆

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Sputter Cathode and Co-evaporation Source Mixed Thin Film Experimental Device. Metal deposition, organic deposition, and sputter cathode are installed in a compact frame. A resistance heating evaporation source (for metal deposition), an organic evaporation source (for organic materials), and magnetron sputtering (for metals and insulating materials) are installed in the chamber, allowing for various thin film experimental setups within a single chamber. ◉ Three combinations available: 1. Sputter Cathode + Resistance Heating Evaporation Source x2 2. Sputter Cathode + Organic Evaporation Source x2 3. Sputter Cathode + Resistance Heating Source x1 + Organic Evaporation Source x1 (*DC sputtering only) 【Specifications】 ◉ Compatible substrates: up to Φ4 inches ◉ Sputtering: 2" cathode x up to 3 sources ◉ Vacuum deposition: Resistance heating evaporation (up to 2), organic evaporation (up to 4) ◉ 7" touch panel operation with PLC automatic process control ◉ APC automatic pressure control ◉ 1 line of Ar gas (standard) + expandable with N2, O2 ◉ Connects to a Windows PC via USB for recipe creation and storage. Data logging on PC ◉ Various other options available ◉ Easy operation with a 7" touch panel and PLC automatic process control

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Companynews list (64)

Company information

テルモセラ・ジャパン

テルモセラ・ジャパン 本社

Industrial Electrical Equipment

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【Endless possibility_thermal engineering...】 Our company sells vacuum thin film devices for semiconductor and electronic device fundamental research, ultra-high temperature heaters for CVD substrate heating, experimental furnaces, temperature measurement equipment, and more. To meet the endless demand for "heat," which is indispensable in any era, and to respond to various requests in the field of fundamental technology development, we aim to introduce the latest equipment and contribute to research and development in Japan.

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