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  5. Evaporation Equipment
  6. MiniLab-026/090 Glove Box Thin Film Experiment Device

MiniLab-026/090 Glove Box Thin Film Experiment Device

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MiniLab-026/090-GB

last updated:Jan 07, 2026

テルモセラ・ジャパン 本社
テルモセラ・ジャパン 本社
  • Special site
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Compact and space-saving! Ideal for organic thin film development, all processes such as deposition, sputtering, and annealing can be seamlessly performed within the glove box.

In the film formation process of 2D materials such as OLED (Organic EL), OPV (Organic Photovoltaic), OTFT (Organic Thin Film Transistor), graphene, and TMD (Transition Metal Dichalcogenides), it is necessary to handle samples in an inert gas atmosphere isolated from oxygen and moisture. The MiniLab-026/090-GB achieves a "oxygen and moisture-free" experimental environment for organic film applications by housing the PVD chamber within the GB, creating a compact and space-saving environment. 【Features】 ◉ A series of processes such as PVD film formation, spin coating, and hot plate baking can be performed seamlessly within the GB without exposing them to the outside air. ◉ Space-saving: The chamber does not protrude from the back, so it does not take up space. 【MiniLab Models】 ◉ MiniLab-026 (26ℓ volume): Metal/insulator/organic material deposition, sputtering, plasma etching, annealing ◉ MiniLab-090 (90ℓ volume): Metal/insulator/organic material deposition, EB deposition, sputtering, plasma etching, annealing * Please first contact us with your required specifications, and we will configure the system according to your needs.

    Evaporation Equipment
GloveBox-Render2-1.jpg

MiniLab-026/090 Glove Box Thin Film Experiment Device

GloveBox-Render2-1.jpg
GloveBox-Render2-1.jpg 1_550.jpg 2_550.jpg 3_550.jpg 4_550_ML026.jpg 5_550_ML090.jpg 6_550_ML090-front.jpg 7_550_ML090-rear.jpg
  • Thermosera Japan_MiniLab-026/090-GB Thin Film Experiment Equipment Listing Page
  • Special site - Product/service details - https://pr.mono.ipros.com/thermocera/product/

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basic information

【GB Compatible MiniLab-026/090 Main Specifications】 ◉ Substrate Size: Maximum Φ6" (026), Maximum Φ10" (090) ◉ Chamber: Made of SUS304, UHV compatible (*090 features a sliding door type, with a maintenance door at the back) ◉ 19-inch control rack stored under the workbench ◉ ML Chamber Internal Film Deposition Module: - Resistance heating evaporation source (up to 4 sources) - Organic evaporation source (up to 4 sources) - Φ2" Magnetron cathodes (up to 3 units) - Plasma etching - Substrate heating stage, etc. ◉ High precision film thickness control ◉ Turbo molecular pump + rotary pump (dry scroll pump option) ◉ Other abundant options *For other detailed specifications, please contact us.

Price range

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Delivery Time

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Applications/Examples of results

OLED (Organic Electroluminescent) OPV (Organic Photovoltaic) OTFT (Organic Thin-Film Transistor) Graphene 2D Materials (Two-dimensional layered inorganic nanomaterials such as transition metal dichalcogenides) Others

Detailed information

  • Helical-Coil-Filament.jpg

    TE1 (1-pole) to TE4 (4-pole) resistance heating filament *The photo shows a 3-pole type. It is a base chamber equipped with multiple spare ports, allowing for easy rearrangement and expansion.

  • TE4_thermal-source_basket-type.jpg

    Basket type thermal source for MiniLab-LT26A resistance heating evaporation device, basket type x4 pole type.

  • LTE-source.jpg

    Organic material evaporation source cell LTES-1cc or 5cc Organic source cell for MiniLab series Easy to attach and detach the crucible during material replenishment Alumina or quartz crucible Temperature control range 80 to 600°C UHV compatible High-precision PID automatic film thickness loop control is possible with dedicated controllers LTEC-1S (1ch), LTEC-4S (4ch) (±0.1Å/sec)

  • T26M_Glovebox-system-installed.jpg

    LT26A_Glovebox-system-installed-1 LT26A_Glovebox-system-installed-1

  • T26M_Glovebox-system-installed2.jpg

    LT26A_Glovebox-system-installed-2 LT26A_Glovebox-system-installed-2

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Product image of ANNEAL wafer annealing equipment.

◆ANNEAL◆ Wafer Annealing Equipment

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Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ using a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations at precisely adjusted process gas pressures (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)

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Wafer Annealing Equipment [ANNEAL] Max 1000℃ APC Automatic Pressure Control MFC x3 System Compatible with Φ4 to 6 inch Substrates

  • Product news

Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ using a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations with precisely adjusted process gas pressure (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)

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High-Temperature Annealing Furnace ◉ Mini-BENCH-prism Semi-Automatic Ultra-High Temperature Experimental Furnace Max 2000℃

  • Product news

◉ Maximum operating temperature Max 2000℃ ◉ PLC semi-auto control A higher model of the tabletop Mini-BENCH with semi-auto control Automatically controls each process of "vacuum/purge cycle," "gas replacement," and "venting" Maximum operating temperature 2000℃ Semi-auto control ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace ◉ Effective heating range (crucible dimensions) - Flat heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm ◉ Up to 3 MFC systems for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensures safety during operation Monitors abnormal cooling water, chamber temperature, and overpressure. Made of SUS, robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160 mm (*Installed inside rotary pump housing) Ultra-high temperature heating experiments for small samples in the laboratory, as well as various sample heating experiments for new material research and development, can be easily conducted with simple operations. The main unit is compact yet can be used for research and development in various fields.

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◉Mini-BENCH-prism Semi-Automatic Ultra-High Temperature Experimental Furnace Max 2000℃

  • Product news

◉ Maximum operating temperature Max 2000℃ ◉ PLC semi-automatic control A higher model of the tabletop Mini-BENCH with semi-automatic control Automatically controls each process of "vacuum/purge cycle," "gas replacement," and "venting" Maximum operating temperature 2000℃ Semi-automatic control ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace ◉ Effective heating range (crucible dimensions) - Planar heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm ◉ Up to 3 MFC systems for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensures safety during operation Monitors abnormal cooling water, chamber temperature, and overpressure. Made of SUS, the robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160 mm (*Installed inside rotary pump housing) Various sample heating experiments, such as ultra-high temperature heating of small samples and new material research and development, can be easily performed with simple operations. The main unit is compact yet can be used for research and development in various fields.

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テルモセラ・ジャパン

テルモセラ・ジャパン 本社

Industrial Electrical Equipment

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【Endless possibility_thermal engineering...】 Our company sells vacuum thin film devices for semiconductor and electronic device fundamental research, ultra-high temperature heaters for CVD substrate heating, experimental furnaces, temperature measurement equipment, and more. To meet the endless demand for "heat," which is indispensable in any era, and to respond to various requests in the field of fundamental technology development, we aim to introduce the latest equipment and contribute to research and development in Japan.

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