Sheath Monte Carlo Simulation Module (SMCSM)

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last updated：Oct 06, 2020

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It is possible to perform calculations quickly using the built-in sheath model!

The "In-Sheath Monte Carlo Simulation Module (SMCSM)" calculates the energy distribution and angular distribution of ions and electrons that reach the bottom of the sheath (target surface) from the edge of the plasma sheath through the sheath. While both PIC-MCCM and PHM take time to compute, if you only want to evaluate the energy of ions at the target surface, this product can perform calculations quickly using the built-in sheath model. 【Features】 ■ Calculates the ion energy distribution on the substrate/target surface using the calculation results from PHM (such as sheath potential difference). ■ The calculation model is simple, so it does not take much time to compute. ■ By using the built-in sheath model, it is easy to estimate the ion energy distribution (IED) on the substrate in the RF discharge device. ■ By using the calculation results from PHM, the relationship between parameters such as device voltage, gas pressure, etc., and IED can be evaluated. *For more details, please refer to the PDF document or feel free to contact us.

Related Link - http://www.psinc.co.jp/products/SMCSM.html

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basic information

【Function List (Partial)】 ■Application Area: Energy/Angle distribution of electrons and ions reaching the bottom of the sheath through the sheath from the plasma sheath edge ■Modeling Method: Lieberman's sheath model ■Analysis Method: Monte Carlo method ■Target Dimension: 1D ■Solver: Driver SMCSM / Module SMCSM ■GUI Features: Use of the included GUIM (PNG file output, print output, text data input/output, arbitrary zooming of display screen) ■Pre/Post: Use of the included GUIM ■Analysis Scale: Unlimited (limited by memory capacity and computation time in practice) *For more details, please refer to the PDF document or feel free to contact us.