Small leaks, high quality, small warps, and low defect density! Offered as a cost-effective material.
We provide customers manufacturing semiconductor devices with Silicon-Silicon bonded wafers as a cost-effective alternative to traditional materials such as thick epitaxial and inverted epitaxial wafers, which have been conventionally used for power devices and PiN diodes. By using direct wafer bonding technology, it is possible to create silicon substrates that include various single crystal silicon types. The resistance range of these materials is from 1 mΩ-cm to 10 kΩ-cm. 【Features】 ■ Orientation direction can be arranged with N-type or P-type materials ■ Low leakage, high quality, minimal warping, and low defect density ■ Variation in layer thickness can be kept to +/-0.5 μm or less ■ Transition levels from high concentration to low concentration can be adjusted sharply or softly according to customer applications *For more details, please refer to the PDF document or feel free to contact us.
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basic information
【Other Features】 ■High quality ■Low cost ■Low defect density ■Good film uniformity ■Multilayer ■Sharp concentration transition level ■Resistivity up to 10kΩ-cm ■Good interface quality (as verified by high-resolution thumb inspection) *For more details, please refer to the PDF document or feel free to contact us.
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Applications/Examples of results
【Applications】 ■ High voltage PIN diode ■ RF attenuator ■ Optical detector ■ X-ray detector ■ IR infrared sensor ■ High voltage power device ■ Replacement from epitaxial material *For more details, please refer to the PDF document or feel free to contact us.
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Company information
Our company was established in 2004 as a best-in-class supplier providing high-voltage power MOSFETs and MEMS technology processes that deliver high performance for power supplies, advanced technology base wafers, SOI (silicon on insulator), and bonded silicon substrates at a high cost-effectiveness. (Headquartered in the U.S., with manufacturing facilities in the U.K. and R&D in Tokyo) We have developed and realized high-voltage super junction MOSFETs with innovative deep trench etching MEMS structures through a simple and low-cost process. Please feel free to contact us if you have any inquiries.
