This one machine handles everything from wrapping (rough polishing) to polishing, and is capable of precision polishing of compound semiconductors such as GaAs and InP.
We support everything from lapping (coarse polishing) to polishing, and we monitor and automatically correct the surface shape of the lapping plate itself with a resolution of 0.1μm. The polishing tool communicates with the main unit, allowing for chart displays of the polishing rate, setting of target polishing amounts, and configuration of multi-recipes. Additionally, we offer chemical models compatible with CMP for compound semiconductors such as GaAs and InP, enabling high-precision, high-speed, and damage-free CMP all with a single machine. (De-layering is also possible.)
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【PM6】 Power supply: 110V, 50/60Hz Fixture type: PP5(x1), PP6(x1) Plate rotation: 5 – 100rpm Plate size: 300mm Height: 915mm (965mm including exhaust port) Depth: 720mm Width: 802mm Plate flatness monitor: 0.1um resolution 【LP70】 Power supply: 110V, 50/60Hz Fixture type: PP5(x1~4), PP6(x1~4), PP8(x1~2) Plate rotation: 5 – 100rpm Plate size: 400mm Height: 1000mm Depth: 730mm Width: 950mm Plate flatness monitor: 0.1um resolution
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【Applications】 - Semiconductor-related (Si, SiC, GaN, Sapphire, etc.) - Production of rock/geological specimens - Optical components - Ceramics - IC packaging, etc. 【GaAs, InP Wafers】 We perform high-precision CMP using sodium hypochlorite-based polishing solutions. After polishing, the surface achieves a mirror finish without any cloudiness. Additionally, micro-cracks in the Z-direction can be completely removed. Standard Ra: 1~2nm, standard TTV: 1~2um (for 2~3 inch wafers). 【Thinning of InP Wafers】 Even brittle materials can be thinned uniformly without damage. *Successfully thinned a 4-inch InP wafer to a thickness of 10um. We also have a track record of thinning hard SiC chips to below 200nm thickness. 【Failure Analysis Applications (Delayering)】 We control the polishing amount at the nano-order level, allowing for the uniform exposure of wiring layers with thicknesses of several hundred nm, one layer at a time. In recent years, we have seen an increase in sales for failure analysis applications, and many domestic semiconductor manufacturers have adopted our solutions.
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