Electronic Patent Technology Trend Survey Report on Thermal Management of SiC/GaN High-Temperature Semiconductors
You can view patent information categorized by the following technical classifications: - Mixing and separation - Reduction of thermal resistance - Thermal stress - Electrical characteristics - Air cooling thermal measures - Liquid cooling thermal measures - Related thermal measures - Related thermal measures
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PDF version Wide bandgap semiconductors, represented by SiC/GaN, enable high-efficiency and highly reliable large power control for inverters and converters, promoting the lightweight and compact design of equipment. Consequently, recent thermal management strategies have also changed significantly. This guidebook focuses primarily on the heat dissipation technologies of power devices such as inverters and converters that utilize SiC/GaN power elements. It investigates recent patent information and provides an overview of key angles (technical perspectives) to watch for future developments, including SiC/GaN chip mounting, high-temperature semiconductor mounting boards, hybridization with Si/SiC, thermal separation with high-temperature heat generation blocks, and the circulation cooling of power conversion devices that have become a reality. Previously, heat dissipation design relied on the reuse of conventional, understated techniques. However, thermal management for SiC/GaN high-temperature semiconductors is rapidly evolving, with upstream developments focusing on material properties such as thermally conductive resins, and downstream advancements leading to proactive thermal management and inductive frequency characteristics for high-frequency switching.
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Dynamic Map: [Price] 180,000 yen + tax Patent Guidebook: [Price] 80,000 yen + tax University Patent: [Price] 30,000 yen + tax All Companies Addressing Notable Markets: [Price] 30,000 yen + tax NEO Report: [Price] 180,000 yen + tax Web preview is available. We will introduce the actual products. Please feel free to consult with us.
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