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  3. Measurement and Analysis
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  6. Fine structure analysis | TEM/STEM (Transmission Electron Microscopy Analysis)

Fine structure analysis | TEM/STEM (Transmission Electron Microscopy Analysis)

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last updated:Jul 18, 2025

受託分析|ユーロフィンEAG
受託分析|ユーロフィンEAG
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Nano to angstrom resolution! Observation of fine morphology and composition analysis at the atomic level.

TEM/STEM is an analytical method that uses an electron beam to image samples. The spatial resolution of TEM/STEM is approximately 1 to 2 Å. High-energy electrons (80 to 200 keV) can penetrate electron-transparent samples (up to about 100 nm thick). While the spatial resolution of TEM/STEM is superior to that of SEM, it often requires complex sample preparation. Additionally, in recent years, the introduction of AC-STEM (STEM with spherical aberration-corrected lenses) has enabled higher resolution analysis compared to conventional STEM. EAG Laboratories owns more than 20 TEM/STEM instruments and over 30 FIB-SEM systems for sample preparation. We also have multiple EDS/EELS systems for elemental analysis. With a sufficient number of facilities for analysis, we can always respond to TEM/STEM analysis requests with short turnaround times (standard delivery: 6 to 8 business days / expedited delivery: upon inquiry).

    Electron microscopeContract AnalysisContract measurement
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Fine structure analysis | TEM/STEM (Transmission Electron Microscopy Analysis)

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The sample is thinned using FIB-SEM and then irradiated with an electron beam. High-resolution images can be obtained from the transmission distribution of the electrons that passed through the sample, as well as structural information about the sample through crystallographic information, compositional information, and electron diffraction. - Structural and morphological observation at the nanoscale level - High-resolution mapping of elemental images - Observation of lattice images - Z-contrast imaging - Atomic-scale observation images (AC-STEM)

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Applications/Examples of results

- Observation of cross-sectional structure and elemental analysis of III-V semiconductor GaN-based thin films and devices - Observation of cross-sectional structure and elemental analysis of Si-based thin films and devices - Morphological and structural observation of various solid materials - Observation of fuel cell catalysts - Structural evaluation of organic devices such as organic EL elements

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Case Analysis | Material Analysis Research on the Evolution of FinFET Technology: From 22 nm to 7 nm

Case Analysis | Material Analysis Research on the Evolution of FinFET Technology: From 22 nm to 7 nm

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受託分析|ユーロフィンEAG

受託分析|ユーロフィンEAG

Testing, Analysis and Measurement

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If you are having trouble with material analysis, please feel free to consult EAG! ● High-quality analysis ● Short delivery time ● Quick response Eurofins EAG (abbreviated as EAG) has been providing material analysis services for over 40 years in the semiconductor industry, high-purity metals, and advanced/nano materials fields. We respond to customer needs with our long-standing technical expertise and quick delivery in SIMS analysis (Secondary Ion Mass Spectrometry), which is essential for process development, research and development, and quality assurance of semiconductor devices and manufacturing equipment, as well as TEM/STEM analysis (Transmission Electron Microscopy) and GDMS analysis (Glow Discharge Mass Spectrometry) used for impurity analysis of high-purity materials.

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