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  5. Heating device
  6. 【Mini-BENCH】Ultra High Temperature Tabletop Experimental Furnace Max 2000℃

【Mini-BENCH】Ultra High Temperature Tabletop Experimental Furnace Max 2000℃

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Mini-BENCH furnace

last updated:Jul 14, 2025

テルモセラ・ジャパン 本社
テルモセラ・ジャパン 本社
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Tabletop small-sized experimental furnace - space-saving, with a maximum operating temperature of 2000°C! We also manufacture metal furnaces for reducing atmospheres.

◉ Tabletop size, space-saving: 328(W) x 220(D) x 250(H)mm (*Reference value for 2-inch chamber) ◉ Customizable heater structure: - Cylindrical heater: For sample sintering in crucibles (for solid, powder, granule, and pellet-shaped samples) - Flat heater: For sintering Φ1" to Φ6" wafers and small chips ◉ Fast heating time of approximately 15 minutes (to 1500℃), cooling from 1500℃ to 100℃ in about 40 minutes (in vacuum and gas replacement atmosphere) ◉ High specifications & high cost performance ◉ Simple structure, excellent operability Various high-temperature heating experiments for small samples in laboratories, as well as research and development of new materials, can be easily conducted with simple operations. The main unit is compact yet suitable for research and development in a wide range of fields.

    Heating deviceOther heatersElectric furnace
6_iPROS_550.jpg

【Mini-BENCH】Ultra High Temperature Tabletop Experimental Furnace Max 2000℃

6_iPROS_550.jpg
6_iPROS_550.jpg 2.jpg 1.jpg IMG_4631.png
  • ThermoCeram Japan_ Ultra-High Temperature Small Experimental Furnace Page
  • Special site - Product/service details - https://pr.mono.ipros.com/thermocera/product/

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basic information

◆Device Configuration◆ We will propose a configuration that meets your budget and objectives. (A) Minimum configuration: Chamber + Temperature control unit (B) Above minimum configuration (A) + Vacuum exhaust system (pump, gauge, valve, vacuum piping) ◆Basic Specifications◆ - Heater: C/C composite, PG coated C/C composite (carbon furnace), tungsten (metal furnace) - Insulation material: Graphite felt (carbon furnace), tungsten/molybdenum (metal furnace), or tungsten/molybdenum multilayer shield - Temperature control: Digital programmable controller, C thermocouple - Achievable vacuum level: 1x10-2 Pascal (*However, in the case of an empty furnace) - Power supply specifications: AC200V 50/60HZ three-phase 6KVA - Cooling water: 3L/min, 0.4Mpa 25-30℃ ◆Control Box Specifications◆ - Programmable temperature controller - DC power supply unit or external transformer box - Current and voltage meters - Heater circuit trip switch - Main power switch ◆Options◆ - Vacuum exhaust system - Custom crucible Others

Price information

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Delivery Time

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Applications/Examples of results

◆Main Application Areas◆ - Development of new materials - Material analysis - Application in various advanced material developments

Detailed information

  • 2.jpg

    Minimum configuration: Mini-BENCH chamber, control box Below, we will provide additional estimates as requested. * Vacuum exhaust set * PLC semi-auto control unit * Dedicated stand

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HTE heater / OLED organic deposition / high-temperature metal evaporation source

◆HTE Heater◆ High Vacuum Crucible Heating Heater Max 1500℃

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The HTE heater is a high-temperature heating heater for vacuum devices with a maximum operating temperature of 1500°C. It can evaporate materials with high evaporation temperatures, making it suitable for a wide range of applications as a vacuum high-temperature heater and deposition cell, from low-temperature organic deposition (up to 800°C) cells to high-temperature resistance heating deposition (up to 1500°C) MBE cells. Shutter actuators and water-cooled jackets are also available. The high-temperature heater specification above 800°C is designed with internal shielding, considering insulation and thermal shielding. 【Main Specifications】 ■ Maximum control temperature: 800°C or 1500°C ■ Operating environment: In vacuum or inert gas (*O2 up to 800°C) ■ Heater: Tungsten filament ■ Crucible volume: 1cc (maximum filling amount 1.5cc) ■ Crucible material: Alumina ■ Case material: SUS304 or Molybdenum ■ Thermocouple: K or C 【Options】 ⚫ Crucible material: PBN, Graphite, Quartz ⚫ Heater: NiCr wire, Kanthal wire (*for O2) ⚫ Crucible volume: 10cc (maximum filling amount 15cc) ⚫ Shutter: Pneumatic or motor-driven ⚫ Water-cooled jacket ⚫ Controller (for heater and shutter control)

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Thin Film Experimental Device - "PRODUCTS GUIDE 2022"

★★Thermosera Japan_Thin Film Experimental Equipment_"PRODUCTS GUIDE 2022"★★

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Introducing various experimental devices for research and development in semiconductors, electronic devices, fuel cells, displays, and thin film experiments. We present a range of thin film experimental devices and components for the research and development field. 【nano Benchtop Series】 Desktop type, high performance! nano Benchtop series thin film experimental devices Compact size housing high-functionality and high-spec thin film equipment. 【MiniLab Flexible Thin Film Experimental Device】 A "flexible experimental device" that combines various device configurations and necessary components according to specified requirements. ● Featured Devices - nanoPVD-S10A desktop magnetron sputtering device - nanoPVD-T15A desktop organic film and metal film deposition device - nanoCVD graphene synthesis device - ANNEAL desktop wafer annealing device - MiniLab series flexible thin film experimental device - MiniLab-GB glove box type thin film experimental device - Other components

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MiniLab-026

★☆★☆ MiniLab Series Flexible Thin Film Experimental Device ★☆★☆

  • Product news

The MiniLab thin film experimental device allows for the construction of a compact, semi-customized system that eliminates waste by incorporating the optimal components and control modules according to the required film formation methods and materials from a wide range of options. By equipping a modular control unit with a Plug & Play feel, the application range expands, enabling various thin film process experiments. 【MiniLab Thin Film Experimental Device Configuration Modules】 ◎ Manufacturing Range Resistance heating deposition (TE), organic deposition (LTE), electron beam deposition (EB), sputtering (SP), CVD, dry etching 【Small Footprint & Space Saving】 - Single rack type (026): 590(W) x 590(D)mm - Dual rack type (060): 1200(W) x 590(D)mm - Triple rack type (125): 1770(W) x 755(D)mm 【Excellent Operability & Intuitive Operation Screen】 Windows PC or 7” touch panel. Easy operation that does not require advanced skills, with maximum consideration for safety. All operations except for internal component adjustments and material exchanges in the chamber are performed via the PC/HMI screen.

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Product image of ANNEAL wafer annealing equipment.

Wafer Annealing Equipment [ANNEAL] Max 1000℃ APC Automatic Pressure Control MFC x3 System Compatible with Φ4 to 6 inch Substrates

  • Product news

Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ using a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations with precisely adjusted process gas pressure (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)

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Company information

テルモセラ・ジャパン

テルモセラ・ジャパン 本社

Industrial Electrical Equipment

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【Endless possibility_thermal engineering...】 Our company sells vacuum thin film devices for semiconductor and electronic device fundamental research, ultra-high temperature heaters for CVD substrate heating, experimental furnaces, temperature measurement equipment, and more. To meet the endless demand for "heat," which is indispensable in any era, and to respond to various requests in the field of fundamental technology development, we aim to introduce the latest equipment and contribute to research and development in Japan.

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