List of Semiconductor Manufacturing Equipment products
- classification：Semiconductor Manufacturing Equipment
526～540 item / All 5118 items
Achieves high collection efficiency through electrostatic methods. Offers a wide range of products from large to small sizes. Also compatible with water-soluble oil mist.
- air conditioning
Compact multi-film device that incorporates sputtering, deposition, EB, and annealing thin film modules in a 60L volume chamber, suitable for various applications.
- Sputtering Equipment
- Evaporation Equipment
- CVD Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
A semi-custom-made thin film experimental device that can be assembled with the desired configuration for processes such as sputtering, EB (electron beam), and annealing.
- Evaporation Equipment
- Sputtering Equipment
- Annealing furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
A semi-custom-made thin film experimental device that can be assembled with the desired configuration for processes such as evaporation, sputtering, electron beam (EB) deposition, and annealing.
- Evaporation Equipment
- Sputtering Equipment
- Etching Equipment
High-Temperature Annealing Furnace ◉ Mini-BENCH-prism Semi-Automatic Ultra-High Temperature Experimental Furnace Max 2000℃
◉ Maximum operating temperature Max 2000℃ ◉ PLC semi-auto control A higher model of the tabletop Mini-BENCH with semi-auto control Automatically controls each process of "vacuum/purge cycle," "gas replacement," and "venting" Maximum operating temperature 2000℃ Semi-auto control ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace ◉ Effective heating range (crucible dimensions) - Flat heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm ◉ Up to 3 MFC systems for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensures safety during operation Monitors abnormal cooling water, chamber temperature, and overpressure. Made of SUS, robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160 mm (*Installed inside rotary pump housing) Ultra-high temperature heating experiments for small samples in the laboratory, as well as various sample heating experiments for new material research and development, can be easily conducted with simple operations. The main unit is compact yet can be used for research and development in various fields.
Compact and space-saving! Ideal for research and development. Flexible configuration for purposes such as deposition, sputtering, and annealing.
- Evaporation Equipment
- Sputtering Equipment
- Annealing furnace
High-Temperature Annealing Furnace ◉ Mini-BENCH-prism Semi-Automatic Ultra-High Temperature Experimental Furnace Max 2000℃
◉ Maximum operating temperature Max 2000℃ ◉ PLC semi-auto control A higher model of the tabletop Mini-BENCH with semi-auto control Automatically controls each process of "vacuum/purge cycle," "gas replacement," and "venting" Maximum operating temperature 2000℃ Semi-auto control ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace ◉ Effective heating range (crucible dimensions) - Flat heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm ◉ Up to 3 MFC systems for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensures safety during operation Monitors abnormal cooling water, chamber temperature, and overpressure. Made of SUS, robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160 mm (*Installed inside rotary pump housing) Ultra-high temperature heating experiments for small samples in the laboratory, as well as various sample heating experiments for new material research and development, can be easily conducted with simple operations. The main unit is compact yet can be used for research and development in various fields.
Compact and space-saving! Ideal for research and development. Flexible configuration for purposes such as deposition, sputtering, and annealing.
- Evaporation Equipment
- Sputtering Equipment
- Etching Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Due to its modular embedded design, it is possible to flexibly assemble dedicated machines according to the required film formation methods. A compact thin-film experimental device that can accommodat...
- Sputtering Equipment
- Evaporation Equipment
- Annealing furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Storage-compatible glove box PVD flexible thin film experimental device, featuring a tall chamber with a height of 570mm, contributes to improved uniformity during deposition.
- Evaporation Equipment
- Sputtering Equipment
- Etching Equipment
High-Temperature Annealing Furnace ◉ Mini-BENCH-prism Semi-Automatic Ultra-High Temperature Experimental Furnace Max 2000℃
◉ Maximum operating temperature Max 2000℃ ◉ PLC semi-auto control A higher model of the tabletop Mini-BENCH with semi-auto control Automatically controls each process of "vacuum/purge cycle," "gas replacement," and "venting" Maximum operating temperature 2000℃ Semi-auto control ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace ◉ Effective heating range (crucible dimensions) - Flat heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm ◉ Up to 3 MFC systems for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensures safety during operation Monitors abnormal cooling water, chamber temperature, and overpressure. Made of SUS, robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160 mm (*Installed inside rotary pump housing) Ultra-high temperature heating experiments for small samples in the laboratory, as well as various sample heating experiments for new material research and development, can be easily conducted with simple operations. The main unit is compact yet can be used for research and development in various fields.
Flexible configuration available upon request for processes such as evaporation, sputtering, and EB. Adopts a tall chamber with a height of 570mm, contributing to improved uniformity during evaporatio...
- Evaporation Equipment
High-Temperature Annealing Furnace ◉ Mini-BENCH-prism Semi-Automatic Ultra-High Temperature Experimental Furnace Max 2000℃
◉ Maximum operating temperature Max 2000℃ ◉ PLC semi-auto control A higher model of the tabletop Mini-BENCH with semi-auto control Automatically controls each process of "vacuum/purge cycle," "gas replacement," and "venting" Maximum operating temperature 2000℃ Semi-auto control ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace ◉ Effective heating range (crucible dimensions) - Flat heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm ◉ Up to 3 MFC systems for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensures safety during operation Monitors abnormal cooling water, chamber temperature, and overpressure. Made of SUS, robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160 mm (*Installed inside rotary pump housing) Ultra-high temperature heating experiments for small samples in the laboratory, as well as various sample heating experiments for new material research and development, can be easily conducted with simple operations. The main unit is compact yet can be used for research and development in various fields.
High-performance multi-sputtering device 6-element multi-sputter (for Φ4 inch) 4-element multi-sputter (for Φ6, 8 inch)
- Sputtering Equipment
- Evaporation Equipment
- Etching Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Two thin-film experimental devices are connected with a load-lock mechanism. Different film deposition devices (sputtering, evaporation, etc.) are seamlessly connected with the load-lock.
- Sputtering Equipment
- Evaporation Equipment
- Etching Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Compact and space-saving! Ideal for organic thin film development, all processes such as deposition, sputtering, and annealing can be seamlessly performed within the glove box.
- Evaporation Equipment
High-Temperature Annealing Furnace ◉ Mini-BENCH-prism Semi-Automatic Ultra-High Temperature Experimental Furnace Max 2000℃
◉ Maximum operating temperature Max 2000℃ ◉ PLC semi-auto control A higher model of the tabletop Mini-BENCH with semi-auto control Automatically controls each process of "vacuum/purge cycle," "gas replacement," and "venting" Maximum operating temperature 2000℃ Semi-auto control ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace ◉ Effective heating range (crucible dimensions) - Flat heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm ◉ Up to 3 MFC systems for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensures safety during operation Monitors abnormal cooling water, chamber temperature, and overpressure. Made of SUS, robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160 mm (*Installed inside rotary pump housing) Ultra-high temperature heating experiments for small samples in the laboratory, as well as various sample heating experiments for new material research and development, can be easily conducted with simple operations. The main unit is compact yet can be used for research and development in various fields.
For the semiconductor industry! Process analyzer / Online analyzer for monitoring tetramethylammonium hydroxide (TMAH) in developer solutions!
- Analytical Equipment and Devices
- Wafer
- Semiconductor inspection/test equipment
Measurement of hydrogen peroxide trimethylamine and standard cations for semiconductor manufacturing using ion chromatography.
- Ion Chromatography
- Semiconductor inspection/test equipment
- Analytical Equipment and Devices