List of Etching Equipment products
- classification：Etching Equipment
16～30 item / All 341 items
Reduce the workload from handling heavy objects! Here are five case studies that solved customer challenges! We are also accepting free consultations and tests tailored to your work!
- Other conveying machines
Strong cold wind from room temperature to -13°C! Depending on the usage environment, you can choose between the combo type or the separate type!
- Cooling system
April 10, 2024 (Wednesday) to April 12, 2024 (Friday) Notice of Participation in Nagoya Manufacturing World 2024
Sanwa Shiki Ventilator Co., Ltd. will be exhibiting at the 2024 Monozukuri World (Nagoya) held at Port Messe Nagoya. We will also be showcasing our large cooling fans and cool/warm ambient products. Date: April 10, 2024 - April 12, 2024 Opening: 10:00 AM Location: Nagoya Port Messe (Exhibition Hall 1) *Our booth: 19-1 We would be grateful if you could visit us if you have the time.
UHP/UHV, ultra-high purity, ultra-high vacuum, advanced metal sealing solutions for ultra-low temperature.
- Sealing
- CVD Equipment
- Etching Equipment
Delta Seal (HNV HELICOFLEX(R) DELTA) achieves ultra-high vacuum! [Standardized for JIS V-groove flanges]
- Sealing
- CVD Equipment
- Etching Equipment
[Standardized for JIS V Groove Flange] Low Tightening Pressure Y 'Ultra High Vacuum Delta Seal' for Semiconductor Field
The Delta Seal (HNV HELICOFLEX(R) DELTA) has two delta-shaped protrusions on the contact side of the cross-section. The delta-shaped protrusions are designed to collapse and disappear during the compression of the outer casing when the flange groove is assembled. The design tightening pressure of the Delta Seal is lower compared to the Helicoflex seal, allowing for replacement with elastomer O-rings. Leak rate: *For circular shapes, 10⁻¹² Pa·m³/sec. (10⁻¹¹ atm·cm³/sec.) *Depends on the quality of the installation side. 【Features】 ■Two delta-shaped protrusions on the contact side of the cross-section ■Achieves ultra-high vacuum ■Has excellent elasticity and can be used at high temperatures ■Can be replaced with elastomer O-rings *For more details, please refer to the PDF document or feel free to contact us.
Evaluation of Organic Coatings on Metals Using Electrochemical Measurement Devices Based on ISO 17463 - Paints and Varnishes
- Etching Equipment
- Wafer
- Other surface treatment equipment
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Introduction to Particle-PLUS Analysis Case: "Plasma Analysis of Dual Frequency CCP" Simulation Case
- Etching Equipment
- Wafer
- Ashing device
Two thin film experimental devices are connected with a load lock mechanism. Different film deposition devices (sputtering, evaporation, etc.) are seamlessly connected with the load lock.
- Sputtering Equipment
- Evaporation Equipment
- Etching Equipment
□■□■【Mini-BENCH】Ultra High Temperature Tabletop Experimental Furnace Max 2000℃ □■□■
Tabletop Small-Size Experimental Furnace - Space-Saving, Maximum Operating Temperature 2000℃ ◆ Equipment Configuration ◆ We will propose the desired configuration according to your budget and purpose. (A) Minimum Configuration: Chamber + Temperature Control Unit (B) Above Minimum Configuration (A) + Vacuum Exhaust System (Pump, Gauge, Valve, Vacuum Piping) ◉ Cylindrical Heater: For sintering samples in crucibles (for solid, powder, granule, and pellet-shaped samples) ◉ Flat Heater: For sintering Φ1" to Φ6" wafers and small chip samples ◆ Basic Specifications ◆ - Heater: C/C Composite (Carbon Furnace), Tungsten (Metal Furnace) - Insulation Material: Graphite Felt, Tungsten/Molybdenum - Temperature Control: Programmable Temperature Controller, C Thermocouple - Achievable Vacuum Level: 1x10-2 Pascal (*for an empty furnace) - Power Supply Specifications: AC200V 50/60HZ Three-Phase 6KVA - Cooling Water: 3L/min, 0.4Mpa 25-30℃ ◆ Control Box Specifications ◆ - Programmable Temperature Controller - DC Power Supply Unit or External Transformer Box - Current and Voltage Meters - Heater Circuit Trip Switch - Main Power Switch ◆ Options ◆ - Vacuum Exhaust System - Custom Crucibles and Others
High-performance multi-sputtering device 6-element multi-sputter (for Φ4 inch) 4-element multi-sputter (for Φ6, 8 inch)
- Sputtering Equipment
- Evaporation Equipment
- Etching Equipment
BH Series [UHV Compatible Ultra-High Temperature Vacuum Thin Film Experiment Substrate Heater] Max 1800℃
It can be applied to various vacuum thin film experiments such as PVD (sputtering, evaporation, EB, etc.), CVD, high-temperature vacuum annealing, and high-temperature sample analysis substrate stages. We offer custom-made solutions to meet various specifications. 【Features】 ● Semi-custom product. Designed and manufactured according to your requests. ● Easy replacement of the auxiliary heater wire. ● Easy installation and maintenance (M6 stud bolts, supports). ● Compatible with RF/DC bias and substrate rotation. 【Standard Accessories】 ● Thermocouple: wire type with alumina insulating sleeve. ● Mounting stud bolts. 【Options】 ● RF (150W)/DC (1KW) bias application. ● Non-standard heater wires (Nb, Mo, Pt/Re, WRe, etc.). ● Substrate holding clips. ● Mounting brackets. ● Substrate holders. ● Tapped holes for holder installation. ● Change of top plate material (PBN, quartz, carbon, Inconel, etc.). ● Additional thermocouples for overheating. ● Base flange and vacuum feedthrough.
Flexible configuration available upon request for methods such as deposition, sputtering, and EB. Adopts a tall chamber with a height of 570mm, contributing to improved uniformity during deposition.
- Evaporation Equipment
- Sputtering Equipment
- Etching Equipment
Multi-Target Sputtering Device [MiniLab-125] Compatible with Φ8" SiC Coating Equipped with 1000℃ Heater Stage! Compact Size!
Multifunctional Multi-Sputtering Device (Compatible with Φ8inch Substrates) - Simultaneous deposition of three components + one component Pulse DC sputtering - Flexible arrangement of RF500W and DC850W power supplies to three cathodes (Source 1, 2, 3) - Equipped with a 5KW Pulse DC power supply → used with dedicated cathode (4) - Substrate heating stage Max 800℃ (SiC coated heater can achieve Max 1000℃) - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Main chamber RIE etching stage RF300W - LL chamber <30W low power controlled soft etching - Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch panel or Windows PC operation: All operations can be performed on the touch panel/PC without dispersing control. - Equipment installation dimensions: 1,960(W) x 1,100(D) x 1,700(H) mm - Multi-chamber type can also be manufactured. ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Total support for the installation and maintenance of semiconductor manufacturing equipment, from precision equipment installation compatible with clean rooms! Additional information.
- CVD Equipment
- Etching Equipment
- Resist Device
Due to its modular embedded design, it is possible to flexibly assemble dedicated equipment according to the required film deposition method. A compact thin-film experimental device that can accommoda...
- Sputtering Equipment
- Evaporation Equipment
- Etching Equipment
Multi-Target Sputtering Device [MiniLab-125] Compatible with Φ8" SiC Coating Equipped with 1000℃ Heater Stage! Compact Size!
Multifunctional Multi-Sputtering Device (Compatible with Φ8inch Substrates) - Simultaneous deposition of three components + one component Pulse DC sputtering - Flexible arrangement of RF500W and DC850W power supplies to three cathodes (Source 1, 2, 3) - Equipped with a 5KW Pulse DC power supply → used with dedicated cathode (4) - Substrate heating stage Max 800℃ (SiC coated heater can achieve Max 1000℃) - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Main chamber RIE etching stage RF300W - LL chamber <30W low power controlled soft etching - Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch panel or Windows PC operation: All operations can be performed on the touch panel/PC without dispersing control. - Equipment installation dimensions: 1,960(W) x 1,100(D) x 1,700(H) mm - Multi-chamber type can also be manufactured. ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
A semi-custom-made thin film experimental device that can be assembled with the desired configuration for processes such as evaporation, sputtering, electron beam (EB) deposition, and annealing.
- Evaporation Equipment
- Sputtering Equipment
- Etching Equipment
BH Series [UHV Compatible Ultra-High Temperature Vacuum Thin Film Experiment Substrate Heater] Max 1800℃
It can be applied to various vacuum thin film experiments such as PVD (sputtering, evaporation, EB, etc.), CVD, high-temperature vacuum annealing, and high-temperature sample analysis substrate stages. We offer custom-made solutions to meet various specifications. 【Features】 ● Semi-custom product. Designed and manufactured according to your requests. ● Easy replacement of the auxiliary heater wire. ● Easy installation and maintenance (M6 stud bolts, supports). ● Compatible with RF/DC bias and substrate rotation. 【Standard Accessories】 ● Thermocouple: wire type with alumina insulating sleeve. ● Mounting stud bolts. 【Options】 ● RF (150W)/DC (1KW) bias application. ● Non-standard heater wires (Nb, Mo, Pt/Re, WRe, etc.). ● Substrate holding clips. ● Mounting brackets. ● Substrate holders. ● Tapped holes for holder installation. ● Change of top plate material (PBN, quartz, carbon, Inconel, etc.). ● Additional thermocouples for overheating. ● Base flange and vacuum feedthrough.
Compact and space-saving! Ideal for research and development. Flexible configuration for purposes such as deposition, sputtering, and annealing.
- Evaporation Equipment
- Sputtering Equipment
- Etching Equipment
Multi-Target Sputtering Device [MiniLab-125] Compatible with Φ8" SiC Coating Equipped with 1000℃ Heater Stage! Compact Size!
Multifunctional Multi-Sputtering Device (Compatible with Φ8inch Substrates) - Simultaneous deposition of three components + one component Pulse DC sputtering - Flexible arrangement of RF500W and DC850W power supplies to three cathodes (Source 1, 2, 3) - Equipped with a 5KW Pulse DC power supply → used with dedicated cathode (4) - Substrate heating stage Max 800℃ (SiC coated heater can achieve Max 1000℃) - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Main chamber RIE etching stage RF300W - LL chamber <30W low power controlled soft etching - Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch panel or Windows PC operation: All operations can be performed on the touch panel/PC without dispersing control. - Equipment installation dimensions: 1,960(W) x 1,100(D) x 1,700(H) mm - Multi-chamber type can also be manufactured. ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Storage-compatible glove box PVD flexible thin film experimental device, featuring a tall chamber with a height of 570mm, contributes to improved uniformity during deposition.
- Evaporation Equipment
- Sputtering Equipment
- Etching Equipment
BH Series [UHV Compatible Ultra-High Temperature Vacuum Thin Film Experiment Substrate Heater] Max 1800℃
It can be applied to various vacuum thin film experiments such as PVD (sputtering, evaporation, EB, etc.), CVD, high-temperature vacuum annealing, and high-temperature sample analysis substrate stages. We offer custom-made solutions to meet various specifications. 【Features】 ● Semi-custom product. Designed and manufactured according to your requests. ● Easy replacement of the auxiliary heater wire. ● Easy installation and maintenance (M6 stud bolts, supports). ● Compatible with RF/DC bias and substrate rotation. 【Standard Accessories】 ● Thermocouple: wire type with alumina insulating sleeve. ● Mounting stud bolts. 【Options】 ● RF (150W)/DC (1KW) bias application. ● Non-standard heater wires (Nb, Mo, Pt/Re, WRe, etc.). ● Substrate holding clips. ● Mounting brackets. ● Substrate holders. ● Tapped holes for holder installation. ● Change of top plate material (PBN, quartz, carbon, Inconel, etc.). ● Additional thermocouples for overheating. ● Base flange and vacuum feedthrough.
High-performance multi-sputtering device 6-element multi-sputter (for Φ4 inch) 4-element multi-sputter (for Φ6, 8 inch)
- Sputtering Equipment
- Evaporation Equipment
- Etching Equipment
Multi-Target Sputtering Device [MiniLab-125] Compatible with Φ8" SiC Coating Equipped with 1000℃ Heater Stage! Compact Size!
Multifunctional Multi-Sputtering Device (Compatible with Φ8inch Substrates) - Simultaneous deposition of three components + one component Pulse DC sputtering - Flexible arrangement of RF500W and DC850W power supplies to three cathodes (Source 1, 2, 3) - Equipped with a 5KW Pulse DC power supply → used with dedicated cathode (4) - Substrate heating stage Max 800℃ (SiC coated heater can achieve Max 1000℃) - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Main chamber RIE etching stage RF300W - LL chamber <30W low power controlled soft etching - Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch panel or Windows PC operation: All operations can be performed on the touch panel/PC without dispersing control. - Equipment installation dimensions: 1,960(W) x 1,100(D) x 1,700(H) mm - Multi-chamber type can also be manufactured. ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Two thin-film experimental devices are connected with a load-lock mechanism. Different film deposition devices (sputtering, evaporation, etc.) are seamlessly connected with the load-lock.
- Sputtering Equipment
- Evaporation Equipment
- Etching Equipment
【MiniLab-125】 Multi-target sputtering system (compatible with Φ8") equipped with a 1000℃ heater stage (SiC coating)! Compact size!
Multifunctional Multi-Sputtering Device (Compatible with Φ8inch Substrates) - Triple-source simultaneous deposition + Single-source Pulse DC sputtering - Flexible arrangement of RF500W and DC850W power supplies to the three-source cathodes (Source 1, 2, 3) - Equipped with a 5KW Pulse DC power supply → Used with dedicated cathode (4) - Substrate heating stage Max 800℃ (SiC-coated heater can achieve Max 1000℃) - MFC x 3 systems (Ar, O2, N2) for reactive sputtering - Main chamber RIE etching stage RF300W - LL chamber <30W low-power controlled soft etching - Unique "Soft-Etching" technology reduces substrate damage through substrate bias - Touch panel or Windows PC operation: All operations can be performed via touch panel/PC without dispersing control. - Equipment installation dimensions: 1,960(W) x 1,100(D) x 1,700(H) mm - Multi-chamber configurations are also possible. ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc., can also be configured.
We propose specifications that consider cost reduction through wet etching.
- Etching Equipment