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Analytical Equipment Product List and Ranking from 266 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Oct 22, 2025～Nov 18, 2025
This ranking is based on the number of page views on our site.

Analytical Equipment Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Oct 22, 2025～Nov 18, 2025
This ranking is based on the number of page views on our site.

  1. 一般財団法人材料科学技術振興財団　MST Tokyo//Testing, Analysis and Measurement
  2. ライフィクスアナリティカル Osaka//Pharmaceuticals and Biotechnology
  3. null/null
  4. 4 ビーエルテック Tokyo//Testing, Analysis and Measurement
  5. 5 サーモフィッシャーサイエンティフィック株式会社／Thermo Fisher Scientific K.K. Tokyo//Testing, Analysis and Measurement
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Analytical Equipment Product ranking

Last Updated： Aggregation Period:Oct 22, 2025～Nov 18, 2025
This ranking is based on the number of page views on our site.

  1. Nanoparticle analysis device "TaylorSizer" ライフィクスアナリティカル
  2. iCAP PRO Series ICP Emission Spectrometer サーモフィッシャーサイエンティフィック株式会社／Thermo Fisher Scientific K.K.
  3. Alcohol analysis device for sake Alcolyzer3001 SAKE
  4. 4 Sake FT-IR component analysis device "OenoFoss2"
  5. 5 Trace Sulfur Analysis Device (Old Type) 日東精工アナリテック

Analytical Equipment Product List

721～735 item / All 1224 items

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[Analysis Case] Analysis of Catalysts for Fuel Cells

[Analysis Case] Analysis of Catalysts for Fuel Cells

Chemical state analysis using XPS and morphological observation using TEM.

The electrodes of fuel cells have a structure in which Pt particles, serving as the catalyst, are supported on a carbon carrier. For the evaluation of Pt, XPS analysis is effective for state analysis, while TEM observation is useful for morphological observation. These methods can also be used to assess the degradation of Pt catalysts, such as oxidation (poisoning) and aggregation (decrease in specific surface area). By reconstructing images taken from different angles, a three-dimensional image of the Pt particles is obtained.

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[Analysis Case] High-Sensitivity Analysis of Light Elements in Semiconductor Substrates Using SIMS

[Analysis Case] High-Sensitivity Analysis of Light Elements in Semiconductor Substrates Using SIMS

SIMS analysis allows for the evaluation of elements such as H, C, N, O, and F down to levels below 1 ppm.

It is possible to detect H, C, N, and O in semiconductor substrates at concentrations below 1 ppm (approximately 5E16 atoms/cm3) and F at concentrations below 1 ppb (approximately 5E13 atoms/cm3) using this method. Examples of measurements in actual FZ-Si (Figure 1) and the background levels of III-V semiconductors are presented (Table 2). In addition to III-V semiconductors, standard samples have been prepared for various materials such as metal films and insulating films, enabling highly sensitive quantitative analysis. This method is ideal for bulk analysis of various materials, including semiconductor substrates, and for evaluating the contamination of gas components during semiconductor processes.

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[Analysis Case] Discrimination between Anatase and Rutile Types of Titanium Dioxide

[Analysis Case] Discrimination between Anatase and Rutile Types of Titanium Dioxide

TEM-EELS enables elemental identification and chemical state analysis in micro-regions.

Titanium dioxide (TiO2), used in electronic materials, catalytic materials, ultraviolet absorbers, and photocatalysts, exists in two forms with the same composition but different crystal structures: anatase and rutile. We conducted measurements on a polycrystalline TiO2 sample with a thickness of 20 nm, deposited on a Si substrate (Photo 1), using an electron beam probe focused down to approximately 1 nmΦ (FWHM). The EELS spectra obtained from the sample match the standard spectra of anatase TiO2 for both Ti and O (Figures 1 and 2).

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[Analysis Case] Contamination Assessment of Si Wafer Bevel Area

[Analysis Case] Contamination Assessment of Si Wafer Bevel Area

It is possible to evaluate both metal components and organic components simultaneously.

In semiconductor device manufacturing, from the perspective of improving yield, it is necessary to enhance the cleanliness of the backside of the wafer and to remove substances that remain on the bevel area of the wafer. In this study, we conducted TOF-SIMS analysis of the bevel inclined surface to evaluate the distribution of contamination (Figure 2). Additionally, by comparing the mass spectra of the adhered substances with those of the normal area and the contamination source, we found that the adhered substances matched the metal (Cr) and organic components of the contamination source. TOF-SIMS can capture the contamination generation process in the bevel area (edge and inclined surface).

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[Analysis Case] Component Analysis of Organic EL Devices

[Analysis Case] Component Analysis of Organic EL Devices

TOF-SIMS component analysis of slope-polished organic multilayer structure samples.

We conducted TOF-SIMS analysis on an organic EL device (Figure 1) estimated to be formed from four layers of different organic compounds (or organometallic complexes) using XPS. For multilayer structural samples, depth profiling analysis using sputtering is also performed; however, in this case, we created a slope surface to expose each layer without breaking the bonds of the constituent components. Molecular weight-related ions and fragment ions presumed to be Alq3, NPD, and CuPc were obtained, confirming that TOF-SIMS analysis of the slope surface is an effective method for component analysis of organic multilayer films.

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[Analysis Case] Evaluation of Ultra-Shallow Implant Profiles by SIMS

[Analysis Case] Evaluation of Ultra-Shallow Implant Profiles by SIMS

Evaluation of dopant distribution and junctions is possible even in extremely shallow regions.

The miniaturization of devices has increased the need for evaluating the depth distribution of impurities in extremely shallow regions. To conduct an accurate assessment, SIMS analysis using a primary ion beam with lower energy (below 1 keV) is required. Figure 1 shows examples of measurements of Si wafers implanted with BF2+ 1 keV, P+ 1 keV, and As+ 1 keV, using a primary ion beam energy of 250 eV to 300 eV.

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[Analysis Case] High-Precision Analysis of Ultra-Shallow Dopant Distribution Using SIMS

[Analysis Case] High-Precision Analysis of Ultra-Shallow Dopant Distribution Using SIMS

Can be evaluated with high reproducibility.

Due to the miniaturization of devices, it is necessary to evaluate the depth distribution of impurities in extremely shallow regions. To perform an accurate evaluation, SIMS analysis using a primary ion beam with lower energy (below 1 keV) is required. In this study, the relative standard deviation of the surface density of B calculated from six measurements conducted over multiple days using a 1 keV oxygen ion beam on Si wafers implanted with B+ at low energy was found to be less than 3%, demonstrating that high reproducibility can be achieved in the evaluation of extremely shallow impurity distributions, similar to conventional SIMS analysis.

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[Analysis Case] Evaluation of the Depth Direction State of Stainless Steel Passive Film

[Analysis Case] Evaluation of the Depth Direction State of Stainless Steel Passive Film

Waveform analysis and evaluation of the depth distribution of bonding states by Ar sputtering.

XPS allows for the evaluation of bonding states of oxidized components (components bonded with oxygen) and metallic components (components bonded with metals). Additionally, by using argon ion sputtering, it is also possible to evaluate bonding states in the depth direction. * Regarding the passive film on the surface of stainless steel (with a thickness of several tens of nm to several hundred nm), the results of the above measurements showed that (1) there are many Fe oxidized components on the surface side, (2) Cr oxidized components exist below the Fe oxide layer, and (3) Ni oxidized components are almost nonexistent. * Since it includes changes in bonding states due to sputtering, the evaluation is primarily based on relative comparisons.

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[TDS] Thermal Desorption Gas Analysis Method

[TDS] Thermal Desorption Gas Analysis Method

A mass spectrometry method that allows monitoring of gases generated by vacuum heating/warming at different temperatures, with high sensitivity for detecting hydrogen and water.

TDS is a mass spectrometry method that allows monitoring of gases generated by vacuum heating/ramping at different temperatures. The TDS spectrum represents temperature on the horizontal axis and ion intensity on the vertical axis. This enables comparison of the amount of gas released and the desorption temperatures. Additionally, due to the vacuum environment, hydrogen and water can be analyzed with high sensitivity. - It is possible to understand the relationship between the gases desorbed from the sample, the pressure, and the temperature at which they are generated. - Since only the sample can be heated, the background is low, allowing for high-sensitivity analysis of low-mass molecules such as hydrogen, water, oxygen, and nitrogen. - It is possible to estimate the composition of the gases generated from the sample and perform quantitative analysis (counting the number of molecules).

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X-ray Absorption Fine Structure (XAFS)

X-ray Absorption Fine Structure (XAFS)

XAFS is a method for analyzing the absorption spectrum obtained by irradiating a substance with X-rays.

- It is possible to evaluate the local structure (interatomic distances, coordination numbers) and chemical state (valence, coordination structure) around the target elements in the sample. - Measurements can be conducted regardless of the environment (high temperature, high pressure, atmosphere). - Measurements can be performed on various sample forms (solid, liquid, gas, thin films, amorphous materials, etc.). - A wide applicable concentration range (from major component elements to trace elements). - Non-destructive measurement. - Depending on the measurement method, it is possible to conduct measurements that are sensitive to the surface as well as bulk measurements.

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[XRF] X-ray fluorescence analysis method

[XRF] X-ray fluorescence analysis method

This is a method for conducting elemental analysis and compositional analysis by detecting fluorescent X-rays generated by irradiating with X-rays and spectrally analyzing them using energy or a spectroscopic crystal.

X-ray fluorescence analysis (XRF) is a method that detects fluorescent X-rays generated by irradiated X-rays and performs elemental and compositional analysis by spectrally analyzing the energy and using a spectroscopic crystal. - The entire energy measurement range (from Na to U) can be measured simultaneously in a short time. - Suitable for the analysis of unknown samples. - Non-destructive analysis. - No pre-treatment is required except for special samples, allowing for easy analysis in the atmosphere. - Elemental analysis of large samples that cannot be moved is possible with a handheld device.

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[Analysis Case] Component Identification of Foreign Substances Considering Thermal History

[Analysis Case] Component Identification of Foreign Substances Considering Thermal History

Proposal for the use of standard samples with aligned thermal history.

Polymeric materials such as polypropylene (PP) react with oxygen and moisture in the atmosphere when heated, causing changes in their molecular structure. Therefore, when foreign substances or contaminants may be present in polymeric materials, it is necessary to use standard materials processed in the same environment as the measurement sample for comparison data. To investigate how the PP standard material changes due to heat treatment (200°C for 30 minutes), FT-IR and TOF-SIMS measurements were conducted.

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[Analysis Case] Heating Degradation Test of Lithium-Ion Secondary Batteries

[Analysis Case] Heating Degradation Test of Lithium-Ion Secondary Batteries

Samples after thermal degradation can be evaluated using LC/MS/MS, TOF-SIMS, TEM+EDX, etc.

The development of lithium-ion secondary batteries faces challenges such as improving performance, extending lifespan, and enhancing reliability. To address these challenges, it is important to understand the degradation mechanisms of the batteries. In this study, we conducted a heating degradation test to evaluate the degradation mechanisms caused by temperature. After the heating degradation test, we assessed samples that showed significant capacity reduction using LC/MS/MS for the electrolyte, TOF-SIMS for the anode surface, and FIB-TEM+EDX for the cross-section of the anode.

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[Analysis Case] Qualitative Analysis of Organic EL Layer

[Analysis Case] Qualitative Analysis of Organic EL Layer

Suppression of component alteration through measurement surface finishing under atmosphere control.

We conducted qualitative analysis of the components by measuring the surface under controlled conditions, minimizing alterations due to processing, on a commercially available digital audio player equipped with an organic EL display.

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[Analysis Case] Investigation of the Causes of Wettability Changes Due to Plasma Treatment

[Analysis Case] Investigation of the Causes of Wettability Changes Due to Plasma Treatment

Evaluation of the top surface of modified layers of polymers, resins, and films using TOF-SIMS is possible.

On the surface of cell culture dishes, treatments are performed to convert hydrophobic plastic surfaces to hydrophilic ones in order to enhance cell adhesion. In this study, the surfaces of dishes that underwent hydrophilic treatment were evaluated using XPS and TOF-SIMS, revealing an increase in OH and CHO groups. By conducting quantitative evaluations with XPS and qualitative evaluations with TOF-SIMS, it is possible to capture how the surface has changed.

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