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Analytical Equipment Product List and Ranking from 266 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Oct 22, 2025～Nov 18, 2025
This ranking is based on the number of page views on our site.

Analytical Equipment Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Oct 22, 2025～Nov 18, 2025
This ranking is based on the number of page views on our site.

  1. 一般財団法人材料科学技術振興財団　MST Tokyo//Testing, Analysis and Measurement
  2. ライフィクスアナリティカル Osaka//Pharmaceuticals and Biotechnology
  3. null/null
  4. 4 ビーエルテック Tokyo//Testing, Analysis and Measurement
  5. 5 サーモフィッシャーサイエンティフィック株式会社／Thermo Fisher Scientific K.K. Tokyo//Testing, Analysis and Measurement
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Analytical Equipment Product ranking

Last Updated： Aggregation Period:Oct 22, 2025～Nov 18, 2025
This ranking is based on the number of page views on our site.

  1. Nanoparticle analysis device "TaylorSizer" ライフィクスアナリティカル
  2. iCAP PRO Series ICP Emission Spectrometer サーモフィッシャーサイエンティフィック株式会社／Thermo Fisher Scientific K.K.
  3. Alcohol analysis device for sake Alcolyzer3001 SAKE
  4. 4 Sake FT-IR component analysis device "OenoFoss2"
  5. 5 Trace Sulfur Analysis Device (Old Type) 日東精工アナリテック

Analytical Equipment Product List

736～750 item / All 1224 items

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[Analysis Case] Evaluation of Film-Forming Component Encroachment on the Back Surface of the Wafer

[Analysis Case] Evaluation of Film-Forming Component Encroachment on the Back Surface of the Wafer

Quantitative evaluation of metal components is possible near the bevel area.

In semiconductor device manufacturing, it is necessary to remove metals remaining on the backside of the wafer from the perspective of improving yield, and it is important to quantitatively understand the amount of metal components remaining. To investigate the concentration distribution of metals remaining on the backside within a range of 500 µm from the bevel area, we conducted evaluations using TOF-SIMS. TOF-SIMS has the spatial resolution to detect metal components only near the bevel area, and by using standard samples with known concentrations, it is possible to quantitatively calculate the concentrations.

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[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS

[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS

It is possible to evaluate the depth distribution of B, Al, N, P, and As in SiC with high sensitivity.

SiC is used as a power device material due to its physical properties, but unlike Si, the diffusion of dopants after thermal treatment following ion implantation is difficult. Therefore, it is necessary to control the distribution in the depth direction through multi-step ion implantation. SIMS analysis can evaluate impurity concentrations in the depth direction with high sensitivity (below ppm), making it suitable for assessing the distribution of dopant elements in SiC. It is also possible to evaluate the distribution of light elements (such as H, C, O, F, etc.). Please contact us regarding any elements you would like to evaluate.

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[Analysis Case] Evaluation of Silicon (Si) Oxide Film State

[Analysis Case] Evaluation of Silicon (Si) Oxide Film State

It is possible to capture molecular information of inorganic substances in the depth direction using TOF-SIMS.

In depth-direction analysis of molecular information obtained by TOF-SIMS, (1) the depth resolution is good, (2) it is possible to distinguish the chemical states of inorganic materials such as oxides, nitrides, fluorides, carbides, alloys, and metals, (3) evaluation of trace states is possible, (4) monitoring of OH is possible, (5) relative comparisons between samples (film thickness, composition) are possible, and (6) image analysis allows for a visual capture of the distribution of states at the surface level of a few nanometers. We will summarize the results of natural oxide films and oxide films. Measurement method: TOF-SIMS Product field: LSI, memory Analysis purpose: evaluation of chemical bonding states, evaluation of composition distribution, thickness of corrosion layers For more details, please download the materials or contact us.

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[Analysis Case] Distribution and State Evaluation of OH on Aluminum (Al) Surface

[Analysis Case] Distribution and State Evaluation of OH on Aluminum (Al) Surface

It is possible to capture molecular information of inorganic substances in the depth direction using TOF-SIMS.

The presence of OH and fluoride on the surface of aluminum electrodes is one of the causes of electrode corrosion, and investigating the state of the aluminum surface is essential for identifying the causes of defects. TOF-SIMS excels in depth resolution at the very surface and can measure depth distribution with high sensitivity while monitoring the state of inorganic substances. By evaluating the depth distribution along with OH, we discovered a phenomenon where OH increased without a change in the thickness of the oxide film. In this way, TOF-SIMS enables the evaluation of depth distribution of molecular information of inorganic substances that cannot be obtained through elemental analysis.

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[Analysis Case] Evaluation of Impurities in Metal Wires

[Analysis Case] Evaluation of Impurities in Metal Wires

Visualizing the in-plane distribution of impurities such as atmospheric components with a field equivalent to SEM.

SIMS analysis can be applied to various shapes of samples beyond wafers and substrates. In this case study, we will introduce an example of evaluating the distribution of impurities in a wire. The results of evaluating the impurity distribution in the depth direction from the side of the wire (Figure 2) indicate that the impurity profiles of H, O, F, S, and Cl vary in intensity with depth, suggesting that they are localized within the wire. The elemental mapping of the wire cross-section (Figure 3) confirmed the localization of impurities within the wire.

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[Analysis Case] SIMS Analysis of Compound Layered Structure Samples

[Analysis Case] SIMS Analysis of Compound Layered Structure Samples

Analysis is possible after selectively removing the compound layer through preprocessing.

In SIMS analysis of layered structure samples, there is a concern that in structures where the layer of interest is located at a deep position from the sample surface, the depth resolution may degrade due to the influence of the concentration distribution of the upper layers. In such cases, it is effective to remove the upper layers through pretreatment before analysis. This document presents an example of selectively and progressively removing layers from InP/InGaAs-based SHBT (Single Heterojunction Bipolar Transistor) samples.

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[Analysis Case] SSDP-SIMS Analysis on SiC Substrates

[Analysis Case] SSDP-SIMS Analysis on SiC Substrates

It is possible to obtain the dopant concentration profile from the SiC substrate side.

In the SiC power MOSFET (Figure 1), the concentration distribution of the dopant element Al in the SiC beneath the gate pad was evaluated using SIMS from both the surface side and the backside (Figure 2). Regardless of the direction of analysis, the distribution beyond a depth of approximately 0.5 μm also matches well, suggesting that the spread of the Al concentration distribution reflects the actual elemental distribution rather than being measurement-induced. SSDP-SIMS analysis is possible even on hard substrates like SiC, which are difficult to process. Please feel free to consult us first.

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[Analysis Case] Evaluation of the Cleaning Effect of Organic Ingredients

[Analysis Case] Evaluation of the Cleaning Effect of Organic Ingredients

You can measure the 300mm wafer as it is.

TOF-SIMS has the characteristics of simultaneously evaluating organic and inorganic materials, being capable of analyzing small areas with high sensitivity at the very surface, and allowing evaluation while still in the form of 300mm wafers, making it effective for residue investigations during cleaning processes. We will introduce an analysis case of the removal effect of organic contamination on Si surfaces. TOF-SIMS analysis was conducted on samples where amine-based organic materials were confirmed to be in extremely small quantities by XPS. Even in small areas, it is possible to measure components in such extremely small amounts.

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[Analysis Case] Composition Analysis of GaN-based LED Structures using SIMS

[Analysis Case] Composition Analysis of GaN-based LED Structures using SIMS

Capable of evaluating the composition of the main elemental components of GaN-based LEDs in the depth direction.

In general, the quantification of major elements with concentrations exceeding a certain percentage in SIMS is considered to be low. However, by using the M Cs+ (M: element of interest) detection mode with Cs+ as the primary ion, it is possible to determine the compositional distribution of major element elements in the depth direction. An example of depth compositional evaluation for Al, Ga, and In in GaN-based LED structures is presented.

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[Analysis Case] SSDP-SIMS Analysis of Mg in GaN-based LED Structure

[Analysis Case] SSDP-SIMS Analysis of Mg in GaN-based LED Structure

It is possible to obtain the impurity profile in the GaN-based LED structure from the backside.

In GaN-based LEDs, it is said that the diffusion of the dopant element Mg into the active layer leads to a decrease in luminous efficiency. This document presents a case study where SIMS analysis was conducted on GaN-based LED structural samples from both the surface side and the sapphire substrate side (back side) to evaluate the depth profile of Mg concentration.

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[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS 2

[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS 2

Measurements will be taken according to the analysis conditions suited to the purpose.

This paper presents examples of evaluating the depth concentration distribution of the dopant elements N, Al, and P in commercially available SiC power MOSFETs using multiple analysis modes. Depending on the analysis objectives, it is possible to measure multiple elements simultaneously without measuring each element separately under optimal conditions. Examples are provided for cases of simultaneous multi-element measurement and measurements focused on each individual element.

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Quantification of Hydrogen Bonding States in SiN Films

Quantification of Hydrogen Bonding States in SiN Films

Quantification of Si-H and N-H in SiN films using infrared absorption method.

It is possible to determine the concentrations of Si-H and N-H in SiN films through FT-IR analysis. Although it is also possible to determine hydrogen concentration using analyses such as SIMS, this provides the total hydrogen concentration and does not allow for the separate determination of hydrogen bonded to Si and hydrogen bonded to N. In FT-IR, the Si-H stretching vibration and N-H stretching vibration have peaks at different positions, allowing us to use these peaks to determine the respective hydrogen concentrations. Below are examples of analyses that determined the concentrations of Si-H and N-H in SiN films on Si substrates.

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[Analysis Case] Ginseng - LC/MS/MS Analysis of Herbal Components

[Analysis Case] Ginseng - LC/MS/MS Analysis of Herbal Components

Simultaneous analysis of six types of ginsenosides (Rb1, Rc, Rd, Re, Rg1, Rg3)

The main component of Korean ginseng, which is widely used as a herbal medicine, is a saponin called ginsenoside. Ginsenosides are classified based on the way sugars are attached, and currently, about 30 types have been discovered. In this case, we will introduce an example of analyzing ginsenosides using LC/MS/MS. With LC/MS/MS, we confirmed that the double filtering effect of MRM allows for the separation of peaks from six structurally similar compounds, enabling simultaneous qualitative and quantitative analysis.

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[Analysis Case] Evaluation of H Concentration in IGZO Film

[Analysis Case] Evaluation of H Concentration in IGZO Film

It is possible to evaluate the depth distribution of H in the IGZO film with high sensitivity.

IGZO films are materials that are being researched and developed as TFT materials for displays. The carrier concentration changes according to the hydrogen concentration in the IGZO film, leading to variations in electrical characteristics. Therefore, it is necessary to accurately measure the hydrogen concentration in the film for evaluating the device characteristics and reliability of devices using IGZO films. We will introduce a case study that evaluated the hydrogen concentration in IGZO films under different heating conditions using SIMS.

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[Analysis Case] Evaluation of Ti Diffusion into IGZO Film

[Analysis Case] Evaluation of Ti Diffusion into IGZO Film

Measurement avoiding the influence of high concentration layers using SSDP-SIMS.

IGZO films are materials that are being researched and developed as TFT materials for displays. There are concerns that the diffusion of metal elements into the IGZO film may degrade the TFT characteristics, so it is necessary to accurately measure the metal concentration within the film for evaluating the device characteristics and reliability using IGZO films. We will introduce a case where the Ti concentration in the IGZO film was evaluated from the opposite side of the metal electrode using SSDP-SIMS.

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