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MOSFET(ゲート抵抗) - List of Manufacturers, Suppliers, Companies and Products

Last Updated： Aggregation Period:Oct 08, 2025～Nov 04, 2025
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MOSFET Product List

16～26 item / All 26 items

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ICE10N60FP 10A,600V POWER MOSFET

ICE10N60FP 10A,600V POWER MOSFET

★Please inquire about stock! This is a power MOSFET that contributes to power management energy saving, with a proven track record in power supply manufacturers.

The ICE10N60FP from IceMOS Technology is a TO220 Full Pak package rated for 10A and 600V. 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current capability ■ Enhanced transconductance performance

  • Transistor

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ICE8S65FP 8A,650V POWER MOSFET

ICE8S65FP 8A,650V POWER MOSFET

Mass production release starting January 2023! GEN2 Super Junction MOSFET

The ICE8S65FP from Ice Moss Technology is an 8A, 650V TO220 Full Pak package. It has low Qg and contributes to energy savings! 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt resistance ■ High UIS characteristics ■ High peak current resistance ■ Enhanced mutual conductance performance

  • Transistor

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ICE11N70FP 11A,700V POWER MOSFET

ICE11N70FP 11A,700V POWER MOSFET

★Please inquire about stock. This is a power MOSFET that contributes to power management and energy saving, with a proven track record in power supply manufacturers.

The ICE11N70FP from IceMOS Technology is a TO220 FullPak package rated for 11A and 700V. 【Features】 ■ TO220 FullPak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced transconductance performance

  • Transistor

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ICE15N73FP 15A,730V POWER MOSFET

ICE15N73FP 15A,730V POWER MOSFET

★Please inquire about stock. This is a power MOSFET that contributes to power management energy saving, with a proven track record in power supply manufacturers.

The ICE15N73FP from IceMOS Technology is a TO220 FullPak package rated at 15A, 730V. 【Features】 ■ TO220 FullPak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced transconductance performance

  • Transistor

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ICE22N60B 22A,600V POWER MOSFET

ICE22N60B 22A,600V POWER MOSFET

★Please inquire about stock. This is a power MOSFET that contributes to power management energy saving, with a proven track record in power supply manufacturers.

The ICE22N60B from Ice Moss Technology is a 22A, 600V TO-263 (D2PAK) package. 【Features】 ■ TO263-2L (D2PAK) package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current capability ■ Enhanced mutual conductance performance

  • Transistor

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High-capacity power supply with SiC MOSFET【Toshiba Device & Storage】

High-capacity power supply with SiC MOSFET【Toshiba Device & Storage】

Ideal for industrial equipment at 1200V! Achieves high-speed switching and low on-resistance, significantly reducing power loss and contributing to equipment miniaturization!

Introducing Toshiba Device & Storage's 1200V SiC MOSFET for industrial equipment and high-capacity power applications. This product adopts Toshiba's second-generation chip design, which enhances the reliability of SiC MOSFETs. The gate threshold voltage is set high at 4.2V to 5.8V, reducing the risk of malfunction (false arcing). Additionally, it incorporates a low forward voltage SiC Schottky Barrier Diode (SBD), which also reduces power loss. 【Application Devices】 ■ High-output, high-efficiency large-capacity AC-DC converters for industrial equipment ■ Solar inverters ■ Large-capacity bidirectional DC-DC converters such as UPS *For more details, please download the PDF or contact us.

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Super Junction MOSFET

Super Junction MOSFET

Power MOSFET with a high voltage rating of over 600V! This device features low on-resistance and ultra-low gate charge using MEMS technology.

The "Super Junction MOSFET" is our power MOSFET that utilizes high-voltage super junction technology. By combining silicon MOSFETs with MEMS process technology, we deliver world-class best-in-class performance. We have developed unique manufacturing technology using MEMS technology, and by expanding to smaller dimensions, we provide high-performance and cost-effective MOSFETs. 【Features】 ■ High voltage resistance of over 600V ■ High dv/dt resistance ■ High avalanche characteristics ■ High peak current characteristics ■ Enhanced mutual conductance characteristics, etc. *For more details, please download the PDF or contact us.

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ICE20N60FP 20A,600V Power MOSFET

ICE20N60FP 20A,600V Power MOSFET

★In stock! Same-day shipping available! This power MOSFET contributes to power management energy savings and has a proven track record with power supply manufacturers.

The ICE20N60FP from Ice Moss Technology is a full-pack device rated for 20A and 600V. 【Features】 ■ TO220 Fullpak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced mutual conductance performance * For more details, please refer to the PDF document or feel free to contact us. * An English version of the catalog is available for download.

  • Transistor

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ICE20N60B 20A, 600V POWER MOSFET

ICE20N60B 20A, 600V POWER MOSFET

★Please inquire about stock! This is a power MOSFET that contributes to power management and energy saving, with a proven track record in power supply manufacturers.

The ICE20N60B from Ice Moss Technology is a TO263-2L, D2PAK package rated for 20A and 600V. 【Features】 ■ TO263-2L (D2PAK) package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current capability ■ Enhanced transconductance performance

  • Transistor

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Active clamp type MOSFET

Active clamp type MOSFET

Optimal for driving inductive loads. Freewheeling diodes can be reduced!

It has a built-in Zener diode for active clamp between the gate and drain, which protects the MOSFET from back electromotive force during motor and solenoid drive operations through active clamp operation. This eliminates the need for a freewheeling diode for regenerative back electromotive force. Additionally, it also has a built-in bias resistor, contributing to the reduction of peripheral components.

  • Transistor

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