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MOSFET(小型) - List of Manufacturers, Suppliers, Companies and Products

Last Updated： Aggregation Period:Jan 14, 2026～Feb 10, 2026
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MOSFET Product List

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General-purpose N-channel MOSFET "XP23/XP26 Series"

General-purpose N-channel MOSFET "XP23/XP26 Series"

Built-in gate protection diode for electrostatic discharge protection! MOSFET compliant with EU RoHS directive.

The "XP23/XP26 Series" is a general-purpose N-channel MOSFET that achieves low on-resistance and high-speed switching characteristics. It can be used in various applications such as relay circuits and switching circuits. As an electrostatic countermeasure, it has a built-in gate protection diode. The package adopts a compact SOT-23 (TO-236) (2.9 X 2.4 X h1.15mm), contributing to the miniaturization of equipment. 【Features】 ■ Built-in gate protection diode ■ Low on-resistance ■ High-speed switching *For more details, please refer to the PDF document or feel free to contact us.

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ICE20N60T 20A,600V POWER MOSFET

ICE20N60T 20A,600V POWER MOSFET

The Leadless Package TOLL necessary for product miniaturization has arrived.

This is a leadless package product rated for 20A, 600V, and 170mΩ.

  • Electron tube
  • power supply
  • Transistor
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SOT-89 package high current MOSFET

SOT-89 package high current MOSFET

A lineup of small PKG (SOT-89) MOS-FET high current products!

We have newly added products to our small PKG (SOT-89) MOS-FET lineup that can be used with high currents, which have not been available until now. For the developed products, please check the specifications, quick reference tables, and compatibility tables. Additionally, in the compatibility table, we have picked up equivalent products due to the EOL of RE company's products, so please refer to it.

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ICE8N60LK, 13A, 600V DFN56 New Arrival!!

ICE8N60LK, 13A, 600V DFN56 New Arrival!!

The arrival of the small and thin package DFN56.

A MOSFET that is strong against avalanche with a rating of 8A, 600V. It is ideal for compact power supplies.

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Power Semiconductor 2000V N-Channel Power MOSFET

Power Semiconductor 2000V N-Channel Power MOSFET

High voltage power conversion system! Suitable for various power exchange systems.

The 2000V N-channel power MOSFET is a high-voltage power MOSFET for high-voltage power conversion systems. It eliminates the need for series connections of low-voltage devices, allowing for parallel operation due to its positive temperature coefficient of on-resistance, enabling the construction of cost-effective power systems. Other advantages include a reduction in the number of components that make up the gate drive circuit due to fewer devices used, leading to cost reduction, improved reliability through simpler designs, and saving PCB space, contributing to miniaturization. 【Features】 ○ High blocking voltage ○ Unique high-voltage package ○ Increased creepage distance between terminals ○ Positive temperature coefficient of on-resistance ○ Space-saving (reducing multiple series connections of devices) For more details, please contact us or download the catalog.

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『CSD18541F5』

『CSD18541F5』

60-V N Channel FemtoFET MOSFET 'CSD18541F5'

The 54mΩ, 60V N-channel FemtoFET MOSFET technology 'CSD18541F5' is designed and optimized for many industrial load switch applications with space constraints, minimizing the footprint. By replacing standard small signal MOSFETs with this technology, the footprint size can be significantly reduced. 【Features】 ■ Low on-resistance ■ Extremely low Qg and Qgd ■ Ultra-small footprint: 1.53mm × 0.77mm ■ Low profile: height 0.35mm ■ RoHS compliant *For more details, please contact us.

  • Transistor
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MOSFET　SupIR SMD-2

MOSFET　SupIR SMD-2

Reduce the risk of package cracking due to thermal expansion and contraction caused by temperature application after substrate mounting.

We offer a diverse range of discrete products in various package types for defense, aerospace, and space applications. Features of SupIR SMD-2 ■ Compact and lightweight ■ Temperature resistance reduced by 0.25℃ / W (compared to carrier SMD-2) *Please refer to the image ■ Reduced package resistance ■ Reduced parasitic inductance ■ Higher current rating for ID *For more details, please refer to the catalog or feel free to contact us.

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『CSD15380F3』

『CSD15380F3』

20V N-channel FemtoFET MOSFET 'CSD15380F3'

The CSD15380F3 is a 20V, 990mΩ, N-channel FemtoFET MOSFET designed and optimized to minimize footprint for many handheld and mobile applications. Due to its very small capacitance, it can perform switching at high speeds. When used in data line applications, its low capacitance helps minimize noise coupling. Replacing standard small signal MOSFETs with this technology can significantly reduce the footprint. 【Features】 ■ Very low CiSS and COSS ■ Very low Qg and Qgd ■ Ultra-small footprint: 0.73mm x 0.64mm ■ Ultra-thin profile: maximum height 0.35mm ■ Lead and halogen-free ■ RoHS compliant *For more details, please contact us.

  • Transistor
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High-capacity power supply with SiC MOSFET【Toshiba Device & Storage】

High-capacity power supply with SiC MOSFET【Toshiba Device & Storage】

Ideal for industrial equipment at 1200V! Achieves high-speed switching and low on-resistance, significantly reducing power loss and contributing to equipment miniaturization!

Introducing Toshiba Device & Storage's 1200V SiC MOSFET for industrial equipment and high-capacity power applications. This product adopts Toshiba's second-generation chip design, which enhances the reliability of SiC MOSFETs. The gate threshold voltage is set high at 4.2V to 5.8V, reducing the risk of malfunction (false arcing). Additionally, it incorporates a low forward voltage SiC Schottky Barrier Diode (SBD), which also reduces power loss. 【Application Devices】 ■ High-output, high-efficiency large-capacity AC-DC converters for industrial equipment ■ Solar inverters ■ Large-capacity bidirectional DC-DC converters such as UPS *For more details, please download the PDF or contact us.

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SiC MOSFET『FMG50AQ120N6』

SiC MOSFET『FMG50AQ120N6』

Achieves low RDS(on) to maximize the effective use of package space.

The "FMG50AQ120N6" is a SiC MOSFET in a TO-247-4L package (insulated). It achieves reduced wiring resistance and strong bonding through double-sided solder bonding. It has a built-in freewheeling diode (FWD) function, providing high noise resistance. It is suitable for industrial inverters, uninterruptible power supplies (UPS), and various switching power supplies. Please feel free to contact us if you have any inquiries. 【Features】 ■ Compact and highly reliable ■ No external FWD required ■ High short-circuit withstand capability ■ Low on-resistance at high temperatures ■ High noise resistance *For more details, please download the PDF or feel free to contact us.

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200V Ultra Junction X4 Class MOSFET

200V Ultra Junction X4 Class MOSFET

Heat design is simplified, allowing for higher efficiency.

The "200V Ultra Junction X4 Class MOSFET" is a low RDS(on) MOSFET suitable for high-efficiency applications. This product is available in TO-220, TO-247-3L, TO-263, and TO-268HV packages, with a nominal rated current of 60 to 220A. Please feel free to contact us if you have any requests. 【Benefits】 ■ Reduced conduction loss due to low on-resistance RDS(on) ■ Simplified thermal design due to low thermal resistance RthJC ■ High surge tolerance provided by high avalanche energy capacity EAS ■ Reduced gate driver requirements due to decreased gate charge Qg *For more details, please download the PDF or feel free to contact us.

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General-purpose MOSFET

General-purpose MOSFET

Introduction of general-purpose MOSFET lineup (VDSS = ~60V, ID = ~0.7A)!

Introducing our general-purpose MOSFET. This product can be used for various applications due to its general-purpose nature. Target applications include LED driving, motor driving, lithium-ion charging control, DC-DC converters, and load switches, among others. The product specifications include a maximum VDSS of 60V, a maximum ID of 0.7A, and a threshold voltage ranging from 0.5 to 2.0V, making it a versatile general-purpose MOSFET with various characteristics. Additionally, we offer ultra-compact packages such as SC-75A, SC-70, and SC-59, making it suitable for new adoptions as well as alternatives for EOL products from other companies. Some products are also compatible with automotive applications, so please refer to the brochure for details or contact our sales team for inquiries.

  • Transistor
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Latest Power Solution Product Lineup【Cystek】

Latest Power Solution Product Lineup【Cystek】

Product introduction of power MOSFET products for power supply applications.

【BOOST MOS】 Application: Boost-type DC-DC converters, etc. Package: TO-252, TO-220FP Voltage Rating: 100V to 250V Features: Low R<sub>DS(ON)</sub>, high current capability, low Qg 【BUCK MOS】 Application: Buck-type DC-DC converters Package: TO-220FP Features: Ultra-low on-resistance (5.3mΩ and above) 【SR MOS (Synchronous Rectification MOSFET)】 Application: Efficiency improvement in rectification stages Features: High-speed switching, low Qg 【Power Saving MOS】 For ultra-low current applications (e.g., 0.033A class) Compact SOT-23 package 【Power Switch MOS】 Application: ON/OFF control for power lines Package: Various including DFN3x3, SOP-8 Features: Low on-resistance, high current control capability 【Signal Switch MOS】 For low current and low voltage switching applications Supports ultra-compact packages (such as SOT-23) 【GaN/SiC WBG Devices】 GaN HEMT and SiC SBD (Schottky Barrier Diode) High voltage products planned, such as 650V class

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Analog Power Inc

Analog Power Inc

Low Voltage MOSFET

Analog Power Corporation was established in 2002 with the aim of specializing in power management and producing optimal products for customers. It has offices in the United States (San Jose, California), Hong Kong, and Taiwan, and boasts an extensive network of agents that covers most of the global semiconductor market. By leveraging industry-leading manufacturing partners, Analog Power Corporation's products are manufactured to the same standards as those of large and diverse vendors in the market. The employees of Analog Power Corporation are customer-oriented, with a high percentage of engineers having experience in power semiconductors.

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60V/2A Class MOSFET INK0310AC1

60V/2A Class MOSFET INK0310AC1

Expanding 2A class high current products into a compact package (SC-59)!

INK0310AC1 is a variant of the current mass-produced product INK0310AP1, designed in the SC59 package instead of the SOT89 package. Therefore, like the SOT89 package, it has a high drain current and is a 2A class product in a compact package. Additionally, it is suitable for automotive applications and complies with AEC standards.

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