Tohoku University Technology: Non-volatile Functional Memory Device: T11-161
Achieving fully parallel search cells with 6Tr/4Tr, enabling parallel operation of over 1024 bits!!
In conventional TCAMs using SRAM/DRAM, achieving fully parallel TCAMs resulted in increased circuit scale and high power consumption issues. The present invention utilizes the characteristics of MTJ (Magnetic Tunnel Junction) elements, which are a type of non-volatile memory device, to integrate computation and memory functions, resulting in a very compact and low power consumption TCAM. Additionally, by utilizing diode NMOS transistors, it proposes a TCAM word circuit (matchline driver) that enables 144-bit parallel operation.
- Company:Tohoku Techno Arch Co., Ltd.
- Price:Other