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SICMOSFET Product List

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[Information] Shirutoku Report No. 99 #About SiC MOSFETs

[Information] Shirutoku Report No. 99 #About SiC MOSFETs

The performance of MOSFETs is compared using a performance index called FoM! Measurement conditions vary by manufacturer.

★★Shirutoku Report: Useful Information You Should Know★★ SiC MOSFETs have the characteristic of high voltage resistance compared to Si, while also having low resistance. Leveraging this feature, many products are seen replacing high-voltage IGBTs with SiC MOSFETs. This time, I would like to talk about MOSFETs. If you want to know about SiC diodes, please refer to Shirutoku Report No. 12. 【Contents】 ■Comparison examples of Si-MOSFET, IGBT, and SiC-MOSFET ■Do not compare only based on ON resistance ■When replacing with SiC, be careful to change the drive voltage as well *For more details, please refer to the PDF document or feel free to contact us.

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SiC MOSFET FMG50AQ120N6

SiC MOSFET FMG50AQ120N6

1200V rated SiC MOSFET discrete products that achieve high reliability and low loss.

- Insulation-type package with heat dissipation capability (Rth(j-c)=0.22℃・w Typ) - Adopts a 4-pin structure to reduce the influence of source terminal inductance, achieving faster switching and lower loss - Industry-leading low on-resistance (15mΩ Typ Tj=150℃)

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High-capacity power supply with SiC MOSFET【Toshiba Device & Storage】

High-capacity power supply with SiC MOSFET【Toshiba Device & Storage】

Ideal for industrial equipment at 1200V! Achieves high-speed switching and low on-resistance, significantly reducing power loss and contributing to equipment miniaturization!

Introducing Toshiba Device & Storage's 1200V SiC MOSFET for industrial equipment and high-capacity power applications. This product adopts Toshiba's second-generation chip design, which enhances the reliability of SiC MOSFETs. The gate threshold voltage is set high at 4.2V to 5.8V, reducing the risk of malfunction (false arcing). Additionally, it incorporates a low forward voltage SiC Schottky Barrier Diode (SBD), which also reduces power loss. 【Application Devices】 ■ High-output, high-efficiency large-capacity AC-DC converters for industrial equipment ■ Solar inverters ■ Large-capacity bidirectional DC-DC converters such as UPS *For more details, please download the PDF or contact us.

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SiC MOSFET『FMG50AQ120N6』

SiC MOSFET『FMG50AQ120N6』

Achieves low RDS(on) to maximize the effective use of package space.

The "FMG50AQ120N6" is a SiC MOSFET in a TO-247-4L package (insulated). It achieves reduced wiring resistance and strong bonding through double-sided solder bonding. It has a built-in freewheeling diode (FWD) function, providing high noise resistance. It is suitable for industrial inverters, uninterruptible power supplies (UPS), and various switching power supplies. Please feel free to contact us if you have any inquiries. 【Features】 ■ Compact and highly reliable ■ No external FWD required ■ High short-circuit withstand capability ■ Low on-resistance at high temperatures ■ High noise resistance *For more details, please download the PDF or feel free to contact us.

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