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Last Updated： Aggregation Period:Oct 15, 2025～Nov 11, 2025
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analysis Product List

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[Analysis Case] Structural Analysis of Silicon Dioxide

[Analysis Case] Structural Analysis of Silicon Dioxide

Structural analysis of amorphous silicon dioxide (SiO2) using Raman scattering spectroscopy.

Silicon dioxide (SiO2) is widely used in semiconductors as an insulating film, in FPD substrate materials, optical materials, and from medical devices to jewelry; however, conducting structural analysis on glass, which is amorphous, is very challenging. Focusing on the cyclic bonding of SiO2 in glass, Raman measurements were conducted. (Figure 1) In single crystal quartz, the spectrum in the glass state is significantly different, and phonon bands due to long-range order are observed. (Figures 2, 3)

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[Analysis Case] Evaluation of Composition and Impurity Distribution of ZnO Films by SIMS

[Analysis Case] Evaluation of Composition and Impurity Distribution of ZnO Films by SIMS

Visualization of in-plane distribution through imaging SIMS analysis.

The uniformity of the film composition and the distribution of impurities, which are one of the elements in device creation, were evaluated using imaging SIMS analysis. Through data processing after measurement, we can obtain planar images (Figure 1), cross-sectional images (Figure 2), depth distribution profiles at arbitrary locations (Figures 3 and 4), and line profiles. From the distribution of constituent materials and impurities, we can gain information that leads to process and film quality improvements.

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[Electronic Components, Defense Systems] GeneSiC Company Profile

[Electronic Components, Defense Systems] GeneSiC Company Profile

Electronic components operate at low temperatures! This enables the efficient acquisition of renewable energy sources.

Global leading manufacturer of industrial and defense systems By using GeneSiC products, we enhance performance and efficiency. GeneSiC technology products play a crucial role in saving energy in various high-power systems. The technology enables the efficient harnessing of renewable energy sources. Additionally, the electronic components can operate at low temperatures. 【Products Offered】 ■ Electronic Components *You can download the English version of the catalog. *For more details, please refer to the PDF materials or feel free to contact us.

  • Other electronic parts

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[Analysis Case] Observation of Crystal Grains on Cu Surface Using Scanning Ion Microscopy

[Analysis Case] Observation of Crystal Grains on Cu Surface Using Scanning Ion Microscopy

It is possible to obtain insights into the size and distribution of crystal grains in metallic polycrystals.

The Scanning Ion Microscope (SIM) is a method that irradiates a solid sample with an ion beam and detects the secondary electrons generated. Since secondary electrons produce contrast according to the crystal orientation of each grain, it is possible to easily obtain insights into the size and distribution of crystal grains in polycrystalline metals such as Cu and Al using SIM. This document presents an example of measurements where the surface of Cu was observed using SIM.

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[Analysis Case] Evaluation of Gate Oxide Film on SiC Substrate

[Analysis Case] Evaluation of Gate Oxide Film on SiC Substrate

Evaluate film thickness, density, and bonding state.

SiC power devices are expected to reduce power loss and handle large power in a compact form as power conversion elements. We will introduce a case where the thickness and density of the gate oxide film, necessary for improving the characteristics of the device, were evaluated using XRR (X-ray reflectivity) and the bonding state was assessed using XPS (X-ray photoelectron spectroscopy).

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[Analysis Case] Component Analysis of Food Wrap Film Surface

[Analysis Case] Component Analysis of Food Wrap Film Surface

Analysis of the compositional changes on the surface of the wrap film before and after heating using TOF-SIMS.

We analyzed the surface components of three types of commercially available food wrap films (A, B, C) using TOF-SIMS. In this document, we focused on the outermost surface of the wrap films, as shown in Figure 1.

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[Analysis Case] Evaluation of the Diffusion Layer of SiCMOSFET Using SCM and SMM

[Analysis Case] Evaluation of the Diffusion Layer of SiCMOSFET Using SCM and SMM

You can evaluate the p/n polarity and carrier concentration distribution of the SiC device's diffusion layer.

A cross-section of the SiC Planer Power MOSFET was fabricated, and the p/n polarity distribution of the diffusion layer was evaluated using SCM (Scanning Capacitance Microscopy), while the carrier concentration distribution was qualitatively assessed using SMM (Scanning Microwave Microscopy). From both sets of data, it was found that a p-type Body layer is formed in a two-layer structure around the n+ type Source layer, and that a Channel Epitaxial layer exists directly beneath the gate. At the edge of the Channel Epitaxial layer, a partial decrease in concentration was observed in the Source layer.

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[Analysis Case] Breakdown Observation of 600V Rated SiC Diode

[Analysis Case] Breakdown Observation of 600V Rated SiC Diode

Consistent analysis from preprocessing to luminescence location identification.

By using a high-voltage power supply (capable of applying up to 2000V), it is possible to induce breakdown in diodes with high breakdown voltage. In this case, a SiC Schottky diode with a breakdown voltage of 600V was operated, and by applying high voltage in the reverse direction, breakdown was induced. After removing the cathode electrode through polishing, emission microscopy observations were conducted to identify the location of the breakdown current generation. Commercially available products were used for the measurements.

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[FIB] Focused Ion Beam Processing

[FIB] Focused Ion Beam Processing

FIB refers to a focused ion beam with a diameter ranging from a few nanometers to several hundred nanometers, which can be used to scan the sample surface to etch or deposit material in specific areas.

FIB refers to a focused ion beam with diameters ranging from several nanometers to several hundred nanometers, which can be used to etch specific areas (sputtering) or deposit materials such as carbon (C), tungsten (W), and platinum (Pt) onto specific regions by scanning the sample surface. Additionally, the shape of the processed sample can be recognized through SIM images, which detect secondary electrons generated by irradiating the sample with the ion beam. - Arbitrary shape processing through etching in micro-regions (several nanometers to several tens of micrometers) is possible (typical processing size: around 20 μm) - Sample preparation for SEM, SEM-STEM, and TEM imaging (cross-sections of specific areas can be produced) - Fine pattern deposition and thin film formation (C, W, Pt deposition) are possible in the range of several micrometers to several tens of micrometers - High-resolution SIM (Scanning Ion Microscope) imaging is possible (acceleration voltage 30 kV: 4 nm) - Observation of metal crystal grains (Al, Cu, etc.) is possible with SIM images.

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[Analysis Case] Evaluation of the Composition of Secondary Battery Electrolyte

[Analysis Case] Evaluation of the Composition of Secondary Battery Electrolyte

Qualitative and quantitative analysis of various components contained in the electrolyte.

In the electrolyte of lithium-ion secondary batteries, a combination of high dielectric constant solvents and low viscosity solvents is used to improve electrical conductivity. Additionally, additives and electrolytes (supporting salts) not only facilitate the transport of Li ions but also have the function of forming a film on the electrode surface, requiring various performance characteristics. This paper presents examples of qualitative and quantitative analysis of various components such as solvents, electrolytes, and additives by evaluating the electrolyte itself using ICP-MS, volatile components during electrolyte heating using GC/MS, and the dry residue of the electrolyte using TOF-SIMS.

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[Analysis Case] Measurement of Impurity Concentration on the Surface and Inside of SiC Substrates

[Analysis Case] Measurement of Impurity Concentration on the Surface and Inside of SiC Substrates

Analysis of the substrate surface and interior is separated using ICP-MS and GDMS.

Impurities contained in semiconductor materials can affect product quality, leading to issues such as leakage current and early device failure. Therefore, understanding the amount of impurities in the materials is crucial for improving product quality. This document presents a case study on SiC substrates, which are gaining attention as power device materials, analyzing impurities adhered to the substrate surface using ICP-MS and impurities within the substrate using GDMS. Measurement methods: ICP-MS, GDMS Product fields: Power devices, manufacturing equipment, components Analysis purpose: Trace concentration evaluation For more details, please download the document or contact us.

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[Analysis Case] Depth Profile Concentration Analysis of Mg in Deep Ultraviolet LEDs

[Analysis Case] Depth Profile Concentration Analysis of Mg in Deep Ultraviolet LEDs

Quantification of impurities in AlGaN with various Al compositions is possible.

To determine impurity concentrations using SIMS analysis, it is necessary to use a standard sample with the same composition as the analysis sample. By preparing various Al compositions of AlGaN standard samples for AlGaN used in ultraviolet LEDs and power devices, MST can achieve more accurate quantification of impurities. We will introduce a case where, after disassembling a commercially available deep ultraviolet LED, SIMS analysis was conducted to determine the concentration of the dopant Mg and the distribution of the main component Al composition. Measurement method: SIMS Product fields: Lighting, power devices, optical devices Analysis purposes: Trace concentration evaluation, impurity evaluation, distribution evaluation, product investigation For more details, please download the materials or contact us.

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[Analysis Case] Qualitative Analysis of Organometallic Complexes under Atmosphere Control

[Analysis Case] Qualitative Analysis of Organometallic Complexes under Atmosphere Control

Mass spectrometry using TOF-SIMS is possible under conditions that are not affected by oxidation.

Titanium tetraalkoxide is an essential reagent for the Katsuki-Sharpless asymmetric epoxidation and is affected by oxidation in the atmosphere. In this case, we present an investigation using TOF-SIMS on how titanium tetraalkoxide (titanium tetra-isopropoxide) changes under controlled atmosphere and after exposure to air. In MST, the evaluation of the complex can be performed without the influence of atmospheric oxidation due to atmosphere control. Measurement method: TOF-SIMS Product fields: Biotechnology, Pharmaceuticals, Cosmetics, Daily necessities Analysis purpose: Deterioration investigation, Reliability assessment For more details, please download the materials or contact us.

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【Did You Know】Angiotensin-Converting Enzyme <Enzyme Work Series>

【Did You Know】Angiotensin-Converting Enzyme <Enzyme Work Series>

Substances involved in blood pressure increase! Here are some trivia about ACE.

Angiotensin I and Angiotensin II are molecules involved in blood pressure regulation. ACE2 is known as a recognition protein for the novel coronavirus, but this time, we will share some trivia about ACE. Blood pressure regulation is one of the important functions in the body, and angiotensin-converting enzyme is a substance involved in the rise of blood pressure. We will introduce the mechanism of blood pressure elevation, focusing on angiotensin-converting enzyme (ACE), while showing the structures of related substrate compounds. *For detailed content of the article, you can view it through the related links and catalog. For more information, please feel free to contact us.*

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DSC 3500 Sirius / Differential Scanning Calorimeter

DSC 3500 Sirius / Differential Scanning Calorimeter

Diversification of cooling options (electric, liquid nitrogen, gas flow) to accommodate various measurements.

Differential Scanning Calorimetry (DSC) is a mainstream device for analyzing the thermal properties of solids and liquids, capable of very robust and stable measurements. It employs an indirect cooling method, allowing for low-noise measurements even in low-temperature regions. The optimization of the furnace structure provides excellent baseline reproducibility (±10μW). The exchange between liquid nitrogen and the electronic cooling system is easy. The sealed structure reduces the influence of moisture in the atmosphere during low-temperature measurements.

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