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analysis(si) - List of Manufacturers, Suppliers, Companies and Products

Last Updated： Aggregation Period:Oct 15, 2025～Nov 11, 2025
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analysis Product List

31～45 item / All 107 items

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Fine structure analysis | TEM/STEM (Transmission Electron Microscopy Analysis)

Fine structure analysis | TEM/STEM (Transmission Electron Microscopy Analysis)

Nano to angstrom resolution! Observation of fine morphology and composition analysis at the atomic level.

TEM/STEM is an analytical method that uses an electron beam to image samples. The spatial resolution of TEM/STEM is approximately 1 to 2 Å. High-energy electrons (80 to 200 keV) can penetrate electron-transparent samples (up to about 100 nm thick). While the spatial resolution of TEM/STEM is superior to that of SEM, it often requires complex sample preparation. Additionally, in recent years, the introduction of AC-STEM (STEM with spherical aberration-corrected lenses) has enabled higher resolution analysis compared to conventional STEM. EAG Laboratories owns more than 20 TEM/STEM instruments and over 30 FIB-SEM systems for sample preparation. We also have multiple EDS/EELS systems for elemental analysis. With a sufficient number of facilities for analysis, we can always respond to TEM/STEM analysis requests with short turnaround times (standard delivery: 6 to 8 business days / expedited delivery: upon inquiry).

  • Electron microscope
  • Contract Analysis
  • Contract measurement

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[Analysis Case] Evaluation of SiC Power MOSFET Dopants by SIMS

[Analysis Case] Evaluation of SiC Power MOSFET Dopants by SIMS

Imaging SIMS enables the evaluation of localized elements.

We disassembled a commercially available SiC power MOSFET and conducted imaging SIMS measurements to evaluate the concentration distribution of the dopant elements Al, N, and P in a 20 µm square area to a depth of 0.5 µm. We will present a case where we extracted the depth profile concentration distribution of Al, N, and P localized within the sample surface from the data processing after the imaging SIMS measurements.

  • Contract Analysis

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[Analysis Case] SiC by SIMS

[Analysis Case] SiC by SIMS

Imaging SIMS allows for the evaluation of localized elements.

We disassembled a commercially available SiC Schottky diode and conducted imaging SIMS measurements to evaluate the concentration distribution of the dopant element Al in a 40μm square area to a depth of 0.5μm. From the data processing after the imaging SIMS measurements, we extracted the depth-wise concentration distribution of Al localized within the sample surface and present a case study comparing the concentration distributions for each pattern.

  • Contract Analysis

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Large-diameter imaging SIMS using RAE detectors

Large-diameter imaging SIMS using RAE detectors

SIMS: Secondary Ion Mass Spectrometry

Imaging SIMS is effective for obtaining spatial distribution information of hydrogen and impurities at ppm levels. By using a RAE (Resistive Anode Encoder) detector for projection-type imaging SIMS, it is possible to obtain distribution images with a larger diameter and deeper regions compared to the commonly used scanning methods in imaging analysis.

  • Contract Analysis

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[SIM] Scanning Ion Microscopy Method

[SIM] Scanning Ion Microscopy Method

Observation of SIM images is possible with high resolution (accelerating voltage 30kV: 4nm).

- SIM imaging observation is possible with high resolution (accelerating voltage 30kV: 4nm). - Compared to SEM images, SIM images provide information about the extreme surface layer. - Observation of metal crystal grains is possible (e.g., Al, Cu). - The resolution is inferior to SEM images (SIM: 4nm, SEM: 0.5nm). ■Features of MST-owned equipment - Compatible with JEIDA standard wafers with a maximum sample size of 300mm in diameter. - Continuous cross-sectional SIM imaging acquisition is possible in combination with FIB (Focused Ion Beam) processing (Slice & View).

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  • Contract Analysis
  • Contract measurement
  • Contract Inspection

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[Example of TOF-SIMS] Analysis of Li

[Example of TOF-SIMS] Analysis of Li

It is possible to detect with high sensitivity! We will introduce a case comparing the analysis of Li using TOF-SIMS and SEM-EDX.

We will introduce a case comparing the analysis of lithium (Li) using TOF-SIMS and SEM-EDX. While SEM-EDX is used for the analysis of contamination and foreign substances, it is difficult to detect Li with general EDX, excluding windowless EDX. On the other hand, TOF-SIMS can detect Li with high sensitivity. Please feel free to contact us if you need assistance. 【Overview】 ■ Analysis of stains on copper plates ■ SEM-EDX analysis → Difficult to detect Li ■ TOF-SIMS analysis → Li detectable *For more details, please refer to the PDF document or feel free to contact us.

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  • Contract measurement

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SiC semiconductor evaluation device "SemiScope"

SiC semiconductor evaluation device "SemiScope"

SiC semiconductor evaluation device using photoluminescence (PL) imaging method

"SemiScope" is a PL imaging device that can measure photoluminescence (PL) images with a resolution of less than 1μm. By using a tiling function that allows imaging measurements while moving the sample, it is possible to obtain PL images of the entire 6-inch wafer with a resolution of approximately 3.3 billion pixels. It visualizes crystal defects in SiC wafers. Non-contact and non-destructive testing can be performed quickly using the PL imaging method. 【Features】 - SiC semiconductor evaluation device - Visualization of crystal defects in SiC wafers - Non-contact, non-destructive testing - Short measurement time possible due to PL imaging method For more details, please contact us or download the catalog.

  • Semiconductor inspection/test equipment

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[Analysis Case] Composite Evaluation of the Active Layer of SiC Power MOSFETs

[Analysis Case] Composite Evaluation of the Active Layer of SiC Power MOSFETs

Evaluate the shape of the active layer and the dopant.

We will introduce a case study evaluating the distribution of the diffusion layer in commercially available SiC power MOSFET devices. In the SiC MOSFET manufacturing process, the channel is formed through ion implantation, activation heat treatment, and epitaxial layer formation. During the active layer formation process, we understood the device structure through TEM observation and evaluated the diffusion layer distribution of the p-type/n-type cross-section and the epitaxial layer from SCM measurements, as well as the depth concentration distribution of dopant elements (N, Al, P) from SIMS measurements. Measurement methods: SIMS, SCM, TEM Product field: Power devices Analysis purpose: Trace concentration evaluation, shape evaluation, product investigation For more details, please download the materials or contact us.

  • Contract Analysis

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[Analysis Case] Three-Dimensional Distribution Evaluation of Dopants in MEMS Using SIMS

[Analysis Case] Three-Dimensional Distribution Evaluation of Dopants in MEMS Using SIMS

Imaging SIMS allows for the visualization of concentration distributions of trace elements in micro-regions.

We conducted three-dimensional imaging SIMS measurements of commercial MEMS products for B and As (measurement area: 75μm square, depth: approximately 1.5μm). After data processing, it is possible to extract surface distributions at arbitrary cross-sections and depths, depth direction distributions in arbitrary areas, and line profiles at arbitrary locations. Note: Since the sample is being excavated with an ion beam while capturing images in the depth direction, this constitutes destructive analysis.

  • Contract Analysis

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[Analysis Case] Photoluminescence Mapping Measurement of SiC Diodes

[Analysis Case] Photoluminescence Mapping Measurement of SiC Diodes

Detection cases of stacking faults in SiC.

SiC has been actively researched and utilized in recent years for applications such as power devices. Due to the various polytypes of SiC, there is a problem where stacking defects, which can lead to disordered stacking arrangements, easily occur. One method for detecting these defects is photoluminescence (PL), which analyzes the light emitted when a sample is stimulated with light. We will introduce a case where mapping measurements were conducted to detect light emission caused by defects.

  • Contract Analysis

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Reproducibility of SIMS analysis data

Reproducibility of SIMS analysis data

It is possible to evaluate the amount of impurities with high reproducibility.

In the manufacturing of semiconductor devices, the control of impurities such as dopants is a crucial process. When focusing on ion implantation, even slight differences can affect quality and performance, making precise control necessary. The high reproducibility of SIMS analysis is ideal for the development and maintenance of these processes.

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  • Contract Analysis

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[Analysis Case] Dopant Investigation in NPT-IGBT Using SIMS

[Analysis Case] Dopant Investigation in NPT-IGBT Using SIMS

Evaluation of localized elements is possible with imaging SIMS.

Imaging SIMS measurements were conducted on a 50μm square area on the emitter side of the NPT-IGBT. Figure 1 shows the ion images of 11B and As obtained from the analysis. It can be seen that 11B and As are injected into the same area. Additionally, while conventional analysis calculates the average concentration of each element over the entire detection area, imaging SIMS measurements allow for the extraction of partial depth profiles, enabling the evaluation of the concentration distribution of dopants localized in the plane (Figure 2).

  • Contract Analysis

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[Analysis Case] High Sensitivity Evaluation of SNDM's SiCMOS

[Analysis Case] High Sensitivity Evaluation of SNDM's SiCMOS

The diffusion layer structure of SiC devices can be visualized (high-sensitivity evaluation of the diffusion layer structure).

In SNDM (Scanning Nonlinear Dielectric Microscopy), it is possible to identify the p/n polarity of semiconductors and visualize the shape of the diffusion layer. This method encompasses the functions of the traditionally used SCM (Scanning Capacitance Microscopy), allowing for sufficient evaluation of next-generation power devices, such as SiC, which are difficult to assess with SCM, from low to high concentrations. It is characterized by high sensitivity and can be applied to all compound semiconductor devices. As an example, we will introduce a case where a cross-section of a SiC Planer Power MOS was fabricated and analyzed using SNDM.

  • Contract Analysis
  • Transistor

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Analysis equipment contributing to automation in the environment and food industry *Exhibiting at JASIS 2025

Analysis equipment contributing to automation in the environment and food industry *Exhibiting at JASIS 2025

A large number of analytical instruments that assist in the automation of processes from pre-treatment of the environment and food to measurement will be exhibited! We will participate in "JASIS 2025," where technologies related to science and analysis come together.

"JASIS 2025" is a science, analysis systems, and solutions exhibition that brings together numerous manufacturers of analytical instruments and scientific equipment that support advancements in science beneficial to people's lives. Various presentations and seminars on many new technologies will be held. There are over 1,000 analytical methods for chemical analysis in fields such as the environment, agriculture, fisheries, and chemistry. Products such as the Continuous Flow Analyzer (CFA) "MiSSion," which is used in many analytical institutions, and devices that contribute to the automation of environmental and food analysis, as well as improvements in efficiency and quality, including "Heavy Metal Analysis Pretreatment Device" and "Near Infrared Analyzer," will be showcased! [Exhibited Products] ■ Continuous Flow Analyzer 'MiSSion' ■ Fully Automatic Acid Decomposition Pretreatment Device 'AATM' ■ Fully Automatic Acid Decomposition Pretreatment Device 'DEENA2' ■ Near Infrared Analyzer 'SpectraStar XT' ■ Damage Starch Measurement Device 'SDmatic 2' *For details on the exhibited products, please refer to the <PDF download>. For more information on various products, please contact us.

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  • Other environmental analysis equipment

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[Analysis Case] SIMS Analysis of Compound Layered Structure Samples

[Analysis Case] SIMS Analysis of Compound Layered Structure Samples

Analysis is possible after selectively removing the compound layer through preprocessing.

In SIMS analysis of layered structure samples, there is a concern that in structures where the layer of interest is located at a deep position from the sample surface, the depth resolution may degrade due to the influence of the concentration distribution of the upper layers. In such cases, it is effective to remove the upper layers through pretreatment before analysis. This document presents an example of selectively and progressively removing layers from InP/InGaAs-based SHBT (Single Heterojunction Bipolar Transistor) samples.

  • Contract Analysis

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