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analysis Product List

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[Analysis Case] Evaluation Case of Hydrogen Injection Sample using SRA/SIMS

[Analysis Case] Evaluation Case of Hydrogen Injection Sample using SRA/SIMS

Introduction to Case Studies on Carrier Concentration Analysis in Lifetime Control Samples

In power semiconductor devices, crystal defects may be formed within the Si substrate for lifetime control. This presents a case study evaluating the carrier concentration distribution due to differences in thermal treatment conditions of hydrogen ions, one of the elements used to create the lifetime control region.

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[Analysis Case] Observation of Crosshatch Pattern Shape

[Analysis Case] Observation of Crosshatch Pattern Shape

It is possible to visualize small irregularities with high vertical resolution.

A scanning white light interferometer (optical interferometer) can perform high-precision non-contact three-dimensional measurements of the surface shape of a sample with "high vertical (Z) resolution (0.1 nm) and a wide (X-Y) measurement field of view (50 μm to 4.2 mm)." An example of observing the surface shape of a Si/SiGe layered sample (crosshatch pattern) is presented. Shape evaluation with an average roughness (Ra) of approximately 1 nm is possible.

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[Analysis Case] Composition and Thickness Evaluation of Ultra-Thin SiON Films

[Analysis Case] Composition and Thickness Evaluation of Ultra-Thin SiON Films

Estimation of film thickness using the average free path of photoelectrons.

For extremely thin films with a thickness of a few nanometers or less, such as natural oxide films on silicon wafers and silicon nitride thin films, we will measure the Si2p spectrum of the sample's surface. By performing waveform analysis on the obtained spectrum, we will determine the proportion of each bonding state and estimate the film thickness from this result and the average free path of photoelectrons (Equation 1).

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[Analysis Case] Discrimination between Anatase and Rutile Types of Titanium Dioxide

[Analysis Case] Discrimination between Anatase and Rutile Types of Titanium Dioxide

TEM-EELS enables elemental identification and chemical state analysis in micro-regions.

Titanium dioxide (TiO2), used in electronic materials, catalytic materials, ultraviolet absorbers, and photocatalysts, exists in two forms with the same composition but different crystal structures: anatase and rutile. We conducted measurements on a polycrystalline TiO2 sample with a thickness of 20 nm, deposited on a Si substrate (Photo 1), using an electron beam probe focused down to approximately 1 nmΦ (FWHM). The EELS spectra obtained from the sample match the standard spectra of anatase TiO2 for both Ti and O (Figures 1 and 2).

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[Analysis Case] Lock-in Thermal Analysis of Package Products

[Analysis Case] Lock-in Thermal Analysis of Package Products

Non-destructive analysis of leakage points in Si-based power diodes.

In lock-in thermal analysis, it is desirable to increase the frequency to narrow down the hotspots; however, there is a problem that the sensitivity decreases. Therefore, it is important to shift the measurement conditions from the high-frequency side to the low-frequency side and identify the frequency at which the heating signal begins to be obtained. In this case, we will introduce an example where the heating location associated with leakage current was identified non-destructively in a cylindrical package. Thus, it is possible to identify heating locations even in samples with complex three-dimensional structures, which are difficult to analyze using the liquid crystal method.

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[Analysis Case] Evaluation of Organic Contamination of Wafers in Wafer Cases

[Analysis Case] Evaluation of Organic Contamination of Wafers in Wafer Cases

You can evaluate the causes and total amount of organic contamination in the manufacturing process.

It is known that the adsorption of organic substances on the wafer surface can lead to various issues, such as the degradation of gate oxide film breakdown voltage. Therefore, as the miniaturization and high integration of semiconductor devices progress, it has become increasingly important to monitor not only inorganic substances but also trace amounts of organic substances. Here, we present a case where silicon wafers were stored in two types of wafer cases, and the organic contamination components adhered to the entire wafer surface were concentrated using a wafer analyzer and evaluated using GC/MS.

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[Analysis Case] Evaluation of Impurity Concentration in Gallium Oxide Ga2O3 Films Using SIMS

[Analysis Case] Evaluation of Impurity Concentration in Gallium Oxide Ga2O3 Films Using SIMS

It is possible to quantitatively evaluate impurity elements.

Gallium oxide (Ga2O3) has a higher band gap and superior physical properties compared to SiC and GaN, making it a material of interest for power devices that can be expected to be high-efficiency and low-cost. Controlling the impurity concentration, which affects the characteristics, is crucial in wafer development. This document presents a case study of impurity concentration analysis in Ga2O3 films. It is found that B and C are below the background level, while Si is present. MST offers a range of Ga2O3 standard samples and can quantify over 30 types of impurities.

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Evaluation of sintered magnetic cores using EBSD

Evaluation of sintered magnetic cores using EBSD

By using EBSD, it becomes possible to analyze the causes of the deterioration of magnetic properties in soft magnetic metal powder compacts.

The magnetic cores made from soft magnetic powder through compression molding undergo an annealing treatment after compaction. Factors that change with annealing temperature were analyzed using EBSD, and the relationship with coercivity was investigated. As a result, a decrease in KAM value and an increase in average grain size were observed with rising annealing temperature, which showed a tendency for coercivity to decrease. By applying these results, it becomes possible to analyze the causes of magnetic property degradation in compressed magnetic cores made from soft magnetic metal powders using EBSD.

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NMR analysis service

NMR analysis service

We provide a wide range of analysis of organic and inorganic substances, including composition and molecular structure, using NMR! We will carefully assist you from examination to result reporting.

【Analysis Examples】 - Batteries/Semiconductors: Solution NMR of electrolytes and multinuclear/solid NMR measurements under non-exposure to the atmosphere - Resins/Polymers: Analysis of the composition and degradation of resin components and polymers is possible - Food/Environment: Quantification of components in food and supplements and analysis of degradation status - Pharmaceuticals/Bio: Measurement of the presence and strength of interactions between drugs and receptors is possible

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Combinatorial characteristic analysis

Combinatorial characteristic analysis

Conducting evaluations of electrical characteristics, optical characteristics, crystallinity, and composition!

In our "Combinatorial Property Analysis," we conduct various multi-point physical analyses according to your requests, based on compositional changes. In the example shown in the image, we formed Pt electrodes on a triangular 3-component combinatorial composition gradient sample of HfO2, Y2O3, and Al2O3 on a Si substrate, and performed electrical characteristics such as C-V and I-V to evaluate the high dielectric constant layer. The composition mapping from the top shows the dielectric constant, flat band potential, and leakage current, allowing for simultaneous evaluation of 246 compositions within a single sample. Please feel free to contact us when you need our services. 【Service Details】 ■ Electrical property evaluation such as C-V, I-V, semiconductor characteristics (room temperature to 400°C) ■ Optical property evaluation including transmittance measurement and spectroscopic ellipsometry ■ Crystallinity evaluation using microbeam XRD ■ Compositional evaluation using microbeam XRF, XPS, Auger spectroscopy, etc. *For more details, please refer to the PDF document or feel free to contact us.

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Data DL available: FIB - Nano-level high-precision processing by FIB

Data DL available: FIB - Nano-level high-precision processing by FIB

The FIB device allows for high-precision processing at the desired position on a Si substrate without a mask at the nano level.

The FIB (Focused Ion Beam) system allows for maskless etching processing to create arbitrary shapes. In this case, we introduce the fabrication of pillars at 50nm steps with the following sizes: - Circular: φ5μm - Pillar height: 700nm/650nm/600nm - Pillar diameter: φ500nm Please take a moment to read the PDF materials. Additionally, our company specializes in wiring modifications aimed at circuit corrections for ICs and LSIs using FIB. Specifically, we offer the following services: - Cutting of wiring - Connecting of wiring - Fabrication of test pads for characteristic evaluation We perform these services with a short turnaround time to assist in your IC and LSI development. We would be happy to discuss this further, so please feel free to reach out. *If you need more details, please do not hesitate to contact us. Seiko Future Creation Official Website https://www.seiko-sfc.co.jp/

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Technical Information Magazine 201903-01 Cutting-edge SIMS Analysis Equipment

Technical Information Magazine 201903-01 Cutting-edge SIMS Analysis Equipment

The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.

**Abstract** The state-of-the-art secondary ion mass spectrometry (SIMS) device, NanoSIMS 50L, enables imaging measurements with spatial resolution approximately two orders of magnitude higher than conventional SIMS, thanks to its ion beam with a probe diameter of about 50 nm and a highly efficient mass analysis system. This paper introduces the features of the NanoSIMS 50L device and analysis examples. **Table of Contents** 1. Introduction 2. Overview of the Analytical Device 3. Analysis Example of Hair Cross-Section 4. Analysis Example of SiC Semiconductor Devices 5. Conclusion

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[Test] Fe, Ni, V, Na, K, Al, Si in heavy oil

[Test] Fe, Ni, V, Na, K, Al, Si in heavy oil

After burning and ashing the sample, perform alkaline fusion treatment to obtain a solution! Measure the light intensity for quantitative analysis.

We would like to introduce our test for "Fe, Ni, V, Na, K, Al, Si in heavy oil." This test measures the levels of Fe, Ni, V, Na, K, Al, and Si contained in the fuel. After combusting and ashing the sample, it is treated with alkaline fusion to create an aqueous solution. The intensity of light emitted when the plasma in the ICP optical emission spectrometer returns from an excited state to the ground state is measured for quantitative analysis. 【Test Details】 ■Item Number: K548 ■Required Amount: 100g ■Standard Number: JPI-5S-62 ■Main Target Oil Types: Diesel (including mixed diesel), Heavy Oil *For more details, please refer to the related links or feel free to contact us.

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Evaluation of impurity diffusion from the high concentration layer to the lower layer membrane.

Evaluation of impurity diffusion from the high concentration layer to the lower layer membrane.

Introducing backside SIMS analysis conducted from the substrate side!

In SIMS analysis, when evaluating the diffusion of impurities from a high-concentration layer to a lower layer film, the effects of surface roughness and sputter etching may influence the crater edge effect and knock-on effects from the high-concentration layer. A method of evaluation that is not affected by these influences is Backside SIMS, which conducts SIMS analysis from the substrate side. In the attached PDF document, we introduce the evaluation of the diffusion distribution of F from a SiO2 film (FSG film) to a lower SiO2 film using Backside SIMS, so please take a look. 【Principle of Backside SIMS】 - By polishing the backside of the Si substrate to thin it, we can approach from the backside. - It is possible to control the remaining thickness of the Si substrate to create a thin film, to thin specific areas of patterned samples, or to selectively stop the etching of Si layers such as SiO2. In cases where there are layers that can stop etching, it is also possible to completely remove the Si substrate portion by wet etching. *For more details, please download the PDF or feel free to contact us.

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[Analysis Case] Evaluation of SiC Power MOSFET Dopants by SIMS

[Analysis Case] Evaluation of SiC Power MOSFET Dopants by SIMS

Imaging SIMS enables the evaluation of localized elements.

We disassembled a commercially available SiC power MOSFET and conducted imaging SIMS measurements to evaluate the concentration distribution of the dopant elements Al, N, and P in a 20 µm square area to a depth of 0.5 µm. We will present a case where we extracted the depth profile concentration distribution of Al, N, and P localized within the sample surface from the data processing after the imaging SIMS measurements.

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