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analysis Product List

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Fine structure analysis | TEM/STEM (Transmission Electron Microscopy Analysis)

Fine structure analysis | TEM/STEM (Transmission Electron Microscopy Analysis)

Nano to angstrom resolution! Observation of fine morphology and composition analysis at the atomic level.

TEM/STEM is an analytical method that uses an electron beam to image samples. The spatial resolution of TEM/STEM is approximately 1 to 2 Å. High-energy electrons (80 to 200 keV) can penetrate electron-transparent samples (up to about 100 nm thick). While the spatial resolution of TEM/STEM is superior to that of SEM, it often requires complex sample preparation. Additionally, in recent years, the introduction of AC-STEM (STEM with spherical aberration-corrected lenses) has enabled higher resolution analysis compared to conventional STEM. EAG Laboratories owns more than 20 TEM/STEM instruments and over 30 FIB-SEM systems for sample preparation. We also have multiple EDS/EELS systems for elemental analysis. With a sufficient number of facilities for analysis, we can always respond to TEM/STEM analysis requests with short turnaround times (standard delivery: 6 to 8 business days / expedited delivery: upon inquiry).

  • Electron microscope
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[Analysis Case] Evaluation of SiC Power MOSFET Dopants by SIMS

[Analysis Case] Evaluation of SiC Power MOSFET Dopants by SIMS

Imaging SIMS enables the evaluation of localized elements.

We disassembled a commercially available SiC power MOSFET and conducted imaging SIMS measurements to evaluate the concentration distribution of the dopant elements Al, N, and P in a 20 µm square area to a depth of 0.5 µm. We will present a case where we extracted the depth profile concentration distribution of Al, N, and P localized within the sample surface from the data processing after the imaging SIMS measurements.

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[Analysis Case] SiC by SIMS

[Analysis Case] SiC by SIMS

Imaging SIMS allows for the evaluation of localized elements.

We disassembled a commercially available SiC Schottky diode and conducted imaging SIMS measurements to evaluate the concentration distribution of the dopant element Al in a 40μm square area to a depth of 0.5μm. From the data processing after the imaging SIMS measurements, we extracted the depth-wise concentration distribution of Al localized within the sample surface and present a case study comparing the concentration distributions for each pattern.

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Large-diameter imaging SIMS using RAE detectors

Large-diameter imaging SIMS using RAE detectors

SIMS: Secondary Ion Mass Spectrometry

Imaging SIMS is effective for obtaining spatial distribution information of hydrogen and impurities at ppm levels. By using a RAE (Resistive Anode Encoder) detector for projection-type imaging SIMS, it is possible to obtain distribution images with a larger diameter and deeper regions compared to the commonly used scanning methods in imaging analysis.

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[SIM] Scanning Ion Microscopy Method

[SIM] Scanning Ion Microscopy Method

Observation of SIM images is possible with high resolution (accelerating voltage 30kV: 4nm).

- SIM imaging observation is possible with high resolution (accelerating voltage 30kV: 4nm). - Compared to SEM images, SIM images provide information about the extreme surface layer. - Observation of metal crystal grains is possible (e.g., Al, Cu). - The resolution is inferior to SEM images (SIM: 4nm, SEM: 0.5nm). ■Features of MST-owned equipment - Compatible with JEIDA standard wafers with a maximum sample size of 300mm in diameter. - Continuous cross-sectional SIM imaging acquisition is possible in combination with FIB (Focused Ion Beam) processing (Slice & View).

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[Example of TOF-SIMS] Analysis of Li

[Example of TOF-SIMS] Analysis of Li

It is possible to detect with high sensitivity! We will introduce a case comparing the analysis of Li using TOF-SIMS and SEM-EDX.

We will introduce a case comparing the analysis of lithium (Li) using TOF-SIMS and SEM-EDX. While SEM-EDX is used for the analysis of contamination and foreign substances, it is difficult to detect Li with general EDX, excluding windowless EDX. On the other hand, TOF-SIMS can detect Li with high sensitivity. Please feel free to contact us if you need assistance. 【Overview】 ■ Analysis of stains on copper plates ■ SEM-EDX analysis → Difficult to detect Li ■ TOF-SIMS analysis → Li detectable *For more details, please refer to the PDF document or feel free to contact us.

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SiC semiconductor evaluation device "SemiScope"

SiC semiconductor evaluation device "SemiScope"

SiC semiconductor evaluation device using photoluminescence (PL) imaging method

"SemiScope" is a PL imaging device that can measure photoluminescence (PL) images with a resolution of less than 1μm. By using a tiling function that allows imaging measurements while moving the sample, it is possible to obtain PL images of the entire 6-inch wafer with a resolution of approximately 3.3 billion pixels. It visualizes crystal defects in SiC wafers. Non-contact and non-destructive testing can be performed quickly using the PL imaging method. 【Features】 - SiC semiconductor evaluation device - Visualization of crystal defects in SiC wafers - Non-contact, non-destructive testing - Short measurement time possible due to PL imaging method For more details, please contact us or download the catalog.

  • Semiconductor inspection/test equipment
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[Analysis Case] Composite Evaluation of the Active Layer of SiC Power MOSFETs

[Analysis Case] Composite Evaluation of the Active Layer of SiC Power MOSFETs

Evaluate the shape of the active layer and the dopant.

We will introduce a case study evaluating the distribution of the diffusion layer in commercially available SiC power MOSFET devices. In the SiC MOSFET manufacturing process, the channel is formed through ion implantation, activation heat treatment, and epitaxial layer formation. During the active layer formation process, we understood the device structure through TEM observation and evaluated the diffusion layer distribution of the p-type/n-type cross-section and the epitaxial layer from SCM measurements, as well as the depth concentration distribution of dopant elements (N, Al, P) from SIMS measurements. Measurement methods: SIMS, SCM, TEM Product field: Power devices Analysis purpose: Trace concentration evaluation, shape evaluation, product investigation For more details, please download the materials or contact us.

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[Analysis Case] Three-Dimensional Distribution Evaluation of Dopants in MEMS Using SIMS

[Analysis Case] Three-Dimensional Distribution Evaluation of Dopants in MEMS Using SIMS

Imaging SIMS allows for the visualization of concentration distributions of trace elements in micro-regions.

We conducted three-dimensional imaging SIMS measurements of commercial MEMS products for B and As (measurement area: 75μm square, depth: approximately 1.5μm). After data processing, it is possible to extract surface distributions at arbitrary cross-sections and depths, depth direction distributions in arbitrary areas, and line profiles at arbitrary locations. Note: Since the sample is being excavated with an ion beam while capturing images in the depth direction, this constitutes destructive analysis.

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[Analysis Case] Photoluminescence Mapping Measurement of SiC Diodes

[Analysis Case] Photoluminescence Mapping Measurement of SiC Diodes

Detection cases of stacking faults in SiC.

SiC has been actively researched and utilized in recent years for applications such as power devices. Due to the various polytypes of SiC, there is a problem where stacking defects, which can lead to disordered stacking arrangements, easily occur. One method for detecting these defects is photoluminescence (PL), which analyzes the light emitted when a sample is stimulated with light. We will introduce a case where mapping measurements were conducted to detect light emission caused by defects.

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Reproducibility of SIMS analysis data

Reproducibility of SIMS analysis data

It is possible to evaluate the amount of impurities with high reproducibility.

In the manufacturing of semiconductor devices, the control of impurities such as dopants is a crucial process. When focusing on ion implantation, even slight differences can affect quality and performance, making precise control necessary. The high reproducibility of SIMS analysis is ideal for the development and maintenance of these processes.

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[Analysis Case] Dopant Investigation in NPT-IGBT Using SIMS

[Analysis Case] Dopant Investigation in NPT-IGBT Using SIMS

Evaluation of localized elements is possible with imaging SIMS.

Imaging SIMS measurements were conducted on a 50μm square area on the emitter side of the NPT-IGBT. Figure 1 shows the ion images of 11B and As obtained from the analysis. It can be seen that 11B and As are injected into the same area. Additionally, while conventional analysis calculates the average concentration of each element over the entire detection area, imaging SIMS measurements allow for the extraction of partial depth profiles, enabling the evaluation of the concentration distribution of dopants localized in the plane (Figure 2).

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[Analysis Case] High Sensitivity Evaluation of SNDM's SiCMOS

[Analysis Case] High Sensitivity Evaluation of SNDM's SiCMOS

The diffusion layer structure of SiC devices can be visualized (high-sensitivity evaluation of the diffusion layer structure).

In SNDM (Scanning Nonlinear Dielectric Microscopy), it is possible to identify the p/n polarity of semiconductors and visualize the shape of the diffusion layer. This method encompasses the functions of the traditionally used SCM (Scanning Capacitance Microscopy), allowing for sufficient evaluation of next-generation power devices, such as SiC, which are difficult to assess with SCM, from low to high concentrations. It is characterized by high sensitivity and can be applied to all compound semiconductor devices. As an example, we will introduce a case where a cross-section of a SiC Planer Power MOS was fabricated and analyzed using SNDM.

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[Analysis Case] SIMS Analysis of Compound Layered Structure Samples

[Analysis Case] SIMS Analysis of Compound Layered Structure Samples

Analysis is possible after selectively removing the compound layer through preprocessing.

In SIMS analysis of layered structure samples, there is a concern that in structures where the layer of interest is located at a deep position from the sample surface, the depth resolution may degrade due to the influence of the concentration distribution of the upper layers. In such cases, it is effective to remove the upper layers through pretreatment before analysis. This document presents an example of selectively and progressively removing layers from InP/InGaAs-based SHBT (Single Heterojunction Bipolar Transistor) samples.

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[Analysis Case] Structural Analysis of Silicon Dioxide

[Analysis Case] Structural Analysis of Silicon Dioxide

Structural analysis of amorphous silicon dioxide (SiO2) using Raman scattering spectroscopy.

Silicon dioxide (SiO2) is widely used in semiconductors as an insulating film, in FPD substrate materials, optical materials, and from medical devices to jewelry; however, conducting structural analysis on glass, which is amorphous, is very challenging. Focusing on the cyclic bonding of SiO2 in glass, Raman measurements were conducted. (Figure 1) In single crystal quartz, the spectrum in the glass state is significantly different, and phonon bands due to long-range order are observed. (Figures 2, 3)

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[Analysis Case] Evaluation of Composition and Impurity Distribution of ZnO Films by SIMS

[Analysis Case] Evaluation of Composition and Impurity Distribution of ZnO Films by SIMS

Visualization of in-plane distribution through imaging SIMS analysis.

The uniformity of the film composition and the distribution of impurities, which are one of the elements in device creation, were evaluated using imaging SIMS analysis. Through data processing after measurement, we can obtain planar images (Figure 1), cross-sectional images (Figure 2), depth distribution profiles at arbitrary locations (Figures 3 and 4), and line profiles. From the distribution of constituent materials and impurities, we can gain information that leads to process and film quality improvements.

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[Electronic Components, Defense Systems] GeneSiC Company Profile

[Electronic Components, Defense Systems] GeneSiC Company Profile

Electronic components operate at low temperatures! This enables the efficient acquisition of renewable energy sources.

Global leading manufacturer of industrial and defense systems By using GeneSiC products, we enhance performance and efficiency. GeneSiC technology products play a crucial role in saving energy in various high-power systems. The technology enables the efficient harnessing of renewable energy sources. Additionally, the electronic components can operate at low temperatures. 【Products Offered】 ■ Electronic Components *You can download the English version of the catalog. *For more details, please refer to the PDF materials or feel free to contact us.

  • Other electronic parts
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[Analysis Case] Observation of Crystal Grains on Cu Surface Using Scanning Ion Microscopy

[Analysis Case] Observation of Crystal Grains on Cu Surface Using Scanning Ion Microscopy

It is possible to obtain insights into the size and distribution of crystal grains in metallic polycrystals.

The Scanning Ion Microscope (SIM) is a method that irradiates a solid sample with an ion beam and detects the secondary electrons generated. Since secondary electrons produce contrast according to the crystal orientation of each grain, it is possible to easily obtain insights into the size and distribution of crystal grains in polycrystalline metals such as Cu and Al using SIM. This document presents an example of measurements where the surface of Cu was observed using SIM.

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[Analysis Case] Evaluation of Gate Oxide Film on SiC Substrate

[Analysis Case] Evaluation of Gate Oxide Film on SiC Substrate

Evaluate film thickness, density, and bonding state.

SiC power devices are expected to reduce power loss and handle large power in a compact form as power conversion elements. We will introduce a case where the thickness and density of the gate oxide film, necessary for improving the characteristics of the device, were evaluated using XRR (X-ray reflectivity) and the bonding state was assessed using XPS (X-ray photoelectron spectroscopy).

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[Analysis Case] Component Analysis of Food Wrap Film Surface

[Analysis Case] Component Analysis of Food Wrap Film Surface

Analysis of the compositional changes on the surface of the wrap film before and after heating using TOF-SIMS.

We analyzed the surface components of three types of commercially available food wrap films (A, B, C) using TOF-SIMS. In this document, we focused on the outermost surface of the wrap films, as shown in Figure 1.

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[Analysis Case] Evaluation of the Diffusion Layer of SiCMOSFET Using SCM and SMM

[Analysis Case] Evaluation of the Diffusion Layer of SiCMOSFET Using SCM and SMM

You can evaluate the p/n polarity and carrier concentration distribution of the SiC device's diffusion layer.

A cross-section of the SiC Planer Power MOSFET was fabricated, and the p/n polarity distribution of the diffusion layer was evaluated using SCM (Scanning Capacitance Microscopy), while the carrier concentration distribution was qualitatively assessed using SMM (Scanning Microwave Microscopy). From both sets of data, it was found that a p-type Body layer is formed in a two-layer structure around the n+ type Source layer, and that a Channel Epitaxial layer exists directly beneath the gate. At the edge of the Channel Epitaxial layer, a partial decrease in concentration was observed in the Source layer.

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[Analysis Case] Breakdown Observation of 600V Rated SiC Diode

[Analysis Case] Breakdown Observation of 600V Rated SiC Diode

Consistent analysis from preprocessing to luminescence location identification.

By using a high-voltage power supply (capable of applying up to 2000V), it is possible to induce breakdown in diodes with high breakdown voltage. In this case, a SiC Schottky diode with a breakdown voltage of 600V was operated, and by applying high voltage in the reverse direction, breakdown was induced. After removing the cathode electrode through polishing, emission microscopy observations were conducted to identify the location of the breakdown current generation. Commercially available products were used for the measurements.

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[FIB] Focused Ion Beam Processing

[FIB] Focused Ion Beam Processing

FIB refers to a focused ion beam with a diameter ranging from a few nanometers to several hundred nanometers, which can be used to scan the sample surface to etch or deposit material in specific areas.

FIB refers to a focused ion beam with diameters ranging from several nanometers to several hundred nanometers, which can be used to etch specific areas (sputtering) or deposit materials such as carbon (C), tungsten (W), and platinum (Pt) onto specific regions by scanning the sample surface. Additionally, the shape of the processed sample can be recognized through SIM images, which detect secondary electrons generated by irradiating the sample with the ion beam. - Arbitrary shape processing through etching in micro-regions (several nanometers to several tens of micrometers) is possible (typical processing size: around 20 μm) - Sample preparation for SEM, SEM-STEM, and TEM imaging (cross-sections of specific areas can be produced) - Fine pattern deposition and thin film formation (C, W, Pt deposition) are possible in the range of several micrometers to several tens of micrometers - High-resolution SIM (Scanning Ion Microscope) imaging is possible (acceleration voltage 30 kV: 4 nm) - Observation of metal crystal grains (Al, Cu, etc.) is possible with SIM images.

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[Analysis Case] Evaluation of the Composition of Secondary Battery Electrolyte

[Analysis Case] Evaluation of the Composition of Secondary Battery Electrolyte

Qualitative and quantitative analysis of various components contained in the electrolyte.

In the electrolyte of lithium-ion secondary batteries, a combination of high dielectric constant solvents and low viscosity solvents is used to improve electrical conductivity. Additionally, additives and electrolytes (supporting salts) not only facilitate the transport of Li ions but also have the function of forming a film on the electrode surface, requiring various performance characteristics. This paper presents examples of qualitative and quantitative analysis of various components such as solvents, electrolytes, and additives by evaluating the electrolyte itself using ICP-MS, volatile components during electrolyte heating using GC/MS, and the dry residue of the electrolyte using TOF-SIMS.

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[Analysis Case] Measurement of Impurity Concentration on the Surface and Inside of SiC Substrates

[Analysis Case] Measurement of Impurity Concentration on the Surface and Inside of SiC Substrates

Analysis of the substrate surface and interior is separated using ICP-MS and GDMS.

Impurities contained in semiconductor materials can affect product quality, leading to issues such as leakage current and early device failure. Therefore, understanding the amount of impurities in the materials is crucial for improving product quality. This document presents a case study on SiC substrates, which are gaining attention as power device materials, analyzing impurities adhered to the substrate surface using ICP-MS and impurities within the substrate using GDMS. Measurement methods: ICP-MS, GDMS Product fields: Power devices, manufacturing equipment, components Analysis purpose: Trace concentration evaluation For more details, please download the document or contact us.

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[Analysis Case] Depth Profile Concentration Analysis of Mg in Deep Ultraviolet LEDs

[Analysis Case] Depth Profile Concentration Analysis of Mg in Deep Ultraviolet LEDs

Quantification of impurities in AlGaN with various Al compositions is possible.

To determine impurity concentrations using SIMS analysis, it is necessary to use a standard sample with the same composition as the analysis sample. By preparing various Al compositions of AlGaN standard samples for AlGaN used in ultraviolet LEDs and power devices, MST can achieve more accurate quantification of impurities. We will introduce a case where, after disassembling a commercially available deep ultraviolet LED, SIMS analysis was conducted to determine the concentration of the dopant Mg and the distribution of the main component Al composition. Measurement method: SIMS Product fields: Lighting, power devices, optical devices Analysis purposes: Trace concentration evaluation, impurity evaluation, distribution evaluation, product investigation For more details, please download the materials or contact us.

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[Analysis Case] Qualitative Analysis of Organometallic Complexes under Atmosphere Control

[Analysis Case] Qualitative Analysis of Organometallic Complexes under Atmosphere Control

Mass spectrometry using TOF-SIMS is possible under conditions that are not affected by oxidation.

Titanium tetraalkoxide is an essential reagent for the Katsuki-Sharpless asymmetric epoxidation and is affected by oxidation in the atmosphere. In this case, we present an investigation using TOF-SIMS on how titanium tetraalkoxide (titanium tetra-isopropoxide) changes under controlled atmosphere and after exposure to air. In MST, the evaluation of the complex can be performed without the influence of atmospheric oxidation due to atmosphere control. Measurement method: TOF-SIMS Product fields: Biotechnology, Pharmaceuticals, Cosmetics, Daily necessities Analysis purpose: Deterioration investigation, Reliability assessment For more details, please download the materials or contact us.

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【Did You Know】Angiotensin-Converting Enzyme <Enzyme Work Series>

【Did You Know】Angiotensin-Converting Enzyme <Enzyme Work Series>

Substances involved in blood pressure increase! Here are some trivia about ACE.

Angiotensin I and Angiotensin II are molecules involved in blood pressure regulation. ACE2 is known as a recognition protein for the novel coronavirus, but this time, we will share some trivia about ACE. Blood pressure regulation is one of the important functions in the body, and angiotensin-converting enzyme is a substance involved in the rise of blood pressure. We will introduce the mechanism of blood pressure elevation, focusing on angiotensin-converting enzyme (ACE), while showing the structures of related substrate compounds. *For detailed content of the article, you can view it through the related links and catalog. For more information, please feel free to contact us.*

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[Analysis Case] Evaluation of Cleansing Oil's Cleaning Effectiveness

[Analysis Case] Evaluation of Cleansing Oil's Cleaning Effectiveness

Measurement examples of cleaning residues using TOF-SIMS.

The way makeup is removed varies depending on the type of cleansing oil, even with the same washing method. To investigate the cleansing effect, we evaluated the remaining components after washing lipstick with oil using TOF-SIMS. This report introduces a case where the differences in cleansing effects due to the type of cleansing oil were assessed by conducting relative comparisons of the components of the lipstick (such as pigments and oils) between samples.

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[Analysis Case] Evaluation of Composition Distribution of Capsule-type Drugs

[Analysis Case] Evaluation of Composition Distribution of Capsule-type Drugs

Imaging evaluation is possible from the overall view to local distribution.

TOF-SIMS allows mass imaging analysis of samples ranging from micrometers to centimeters in size. We conducted mass imaging analysis using TOF-SIMS on the cross-section of a capsule-type drug. We performed cross-section processing and present imaging examples focusing on the entire drug (approximately 7mm x 20mm) and a single granule inside it (approximately 500μm in diameter).

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