We have compiled a list of manufacturers, distributors, product information, reference prices, and rankings for analysis.
ipros is IPROS GMS ・ IPROS One of the largest technical database sites in Japan that collects information on.

analysis(tem) - List of Manufacturers, Suppliers, Companies and Products

Last Updated： Aggregation Period:Sep 03, 2025～Sep 30, 2025
This ranking is based on the number of page views on our site.

analysis Product List

1～15 item / All 26 items

Displayed results
Japan MarTech Nagoya Lab's analytical equipment

Japan MarTech Nagoya Lab's analytical equipment

We are introducing the machines used in our contract analysis service for materials and structures!

We would like to introduce the analytical equipment held by the Nagoya Lab of Japan MarTech. We offer services in material analysis and structural analysis, supported by 4 FIBs and 4 TEMs. We conduct contract analysis services using equipment such as FIB-G4, FIB-NOVA, TEM-Talos, and Glovebox. Please feel free to contact us for more details. 【Equipment Available】 ■FIB-G4×2 (1 unit with EDX) ■FIB-G5×1 (added and operational since March 2022) ■FIB-NOVA×1 (with Cryo Stage) ■TEM-Talos×2 (with EDX) (1 unit added and operational since April 2022) ■TEM-Titan×1 (with EDX and EELS) ■TEM-NEOARM×1 (with Cs-STEM, EELS, and EDX) ■Glovebox×1 (designed for non-atmospheric exposure) *For more details, please refer to the PDF document or feel free to contact us.

  • Other Analysis

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
FIB low acceleration processing

FIB low acceleration processing

FIB: Focused Ion Beam Processing

In the method for preparing thin film samples for TEM observation using FIB, high-energy Ga ions (acceleration voltage of 30 kV) are used, resulting in the formation of a damage layer on the processed surface, which causes a deterioration in the image quality of the TEM. By performing processing at a lower acceleration (2 kV) than conventional methods, the damage layer can be reduced, leading to improved image quality. By reducing the damage on the FIB processed surface through low-acceleration FIB processing, high-quality and reliable data can be obtained in TEM image observation and EELS measurements.

  • Contract Analysis

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Physical Analysis of DLC

Physical Analysis of DLC

Various analyses of DLC (Diamond-Like Carbon) are possible!

We will introduce the evaluation of the crystallinity, film thickness structure, hydrogen content, density, and hardness of DLC (Diamond-Like Carbon).

  • Contract Analysis

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
K-kit: A Tool for Observing Liquid Samples under an Electron Microscope

K-kit: A Tool for Observing Liquid Samples under an Electron Microscope

You can evaluate the properties of nanomaterials, strong aggregates, and weak aggregates (NOAAs) in liquids!

The "K-kit" is a single-use, sealable carrier equipped with microchannels inside. It is designed to facilitate the observation of liquid samples in TEM and SEM, allowing for the characterization of nanomaterials, strong aggregates, and weak aggregates (NOAAs) in liquid. It is suitable for the analysis of nanoparticles and their aggregates and clusters across various industries, including electronics, cosmetics, food, and biomedical. 【Features】 ■ High versatility ■ Reliability of materials and structure ■ High-quality TEM images ■ Sample preparation methods: wet method and dry method *For more details, please refer to the PDF document or feel free to contact us.

  • Other Analysis

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
[Analysis Case] Composite Evaluation of the Active Layer of SiC Power MOSFETs

[Analysis Case] Composite Evaluation of the Active Layer of SiC Power MOSFETs

Evaluate the shape of the active layer and the dopant.

We will introduce a case study evaluating the distribution of the diffusion layer in commercially available SiC power MOSFET devices. In the SiC MOSFET manufacturing process, the channel is formed through ion implantation, activation heat treatment, and epitaxial layer formation. During the active layer formation process, we understood the device structure through TEM observation and evaluated the diffusion layer distribution of the p-type/n-type cross-section and the epitaxial layer from SCM measurements, as well as the depth concentration distribution of dopant elements (N, Al, P) from SIMS measurements. Measurement methods: SIMS, SCM, TEM Product field: Power devices Analysis purpose: Trace concentration evaluation, shape evaluation, product investigation For more details, please download the materials or contact us.

  • Contract Analysis

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Distortion evaluation using SEM equipment

Distortion evaluation using SEM equipment

EBSD: Electron Backscatter Diffraction

Measurements can be performed in bulk state without the need for thinning processes like TEM (NBD: Nano Beam Diffraction). It has the high spatial resolution characteristic of SEM and relatively high strain sensitivity. Additionally, there is a possibility of detecting local lattice strain as tensor data.

  • Contract Analysis

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
What is a HAADF-STEM image?

What is a HAADF-STEM image?

HAADF-STEM: High-Angle Annular Dark Field Scanning Transmission Electron Microscopy

■Principle HAADF-STEM (High-angle Annular Dark Field Scanning TEM) images are obtained by scanning a finely focused electron beam across the sample and detecting the electrons that are scattered at high angles using an annular detector. ■Features Materials with a larger Z2ρ scatter more at high angles ↓ Heavy elements appear dark in STEM images and bright in HAADF-STEM images. Since contrast is obtained that is proportional to atomic number (Z), it is also referred to as Z-contrast imaging.

  • Contract Analysis

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
[Analysis Case] Evaluation of Contact Electrodes for SiC Power MOSFETs

[Analysis Case] Evaluation of Contact Electrodes for SiC Power MOSFETs

Identification of the interface between contact electrodes and SiC layer, and evaluation of elemental distribution.

We will introduce an analysis case of commercially available SiC power MOSFET devices. In SiC materials, it is essential to control the materials in a system that includes not only Si but also C, which differs from the conventional manufacturing methods of Si semiconductors. In the process of forming ohmic junctions between the contact electrodes and the SiC layer, we evaluated the elemental distribution and crystal phases, including C, using EDX/EELS analysis with TEM and electron diffraction.

  • Contract Analysis

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
[FIB] Focused Ion Beam Processing

[FIB] Focused Ion Beam Processing

FIB refers to a focused ion beam with a diameter ranging from a few nanometers to several hundred nanometers, which can be used to scan the sample surface to etch or deposit material in specific areas.

FIB refers to a focused ion beam with diameters ranging from several nanometers to several hundred nanometers, which can be used to etch specific areas (sputtering) or deposit materials such as carbon (C), tungsten (W), and platinum (Pt) onto specific regions by scanning the sample surface. Additionally, the shape of the processed sample can be recognized through SIM images, which detect secondary electrons generated by irradiating the sample with the ion beam. - Arbitrary shape processing through etching in micro-regions (several nanometers to several tens of micrometers) is possible (typical processing size: around 20 μm) - Sample preparation for SEM, SEM-STEM, and TEM imaging (cross-sections of specific areas can be produced) - Fine pattern deposition and thin film formation (C, W, Pt deposition) are possible in the range of several micrometers to several tens of micrometers - High-resolution SIM (Scanning Ion Microscope) imaging is possible (acceleration voltage 30 kV: 4 nm) - Observation of metal crystal grains (Al, Cu, etc.) is possible with SIM images.

  • 打ち合わせ.jpg
  • セミナー.jpg
  • Contract Analysis
  • Contract measurement
  • Contract Inspection

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
[Analysis Case] Discrimination between Anatase and Rutile Types of Titanium Dioxide

[Analysis Case] Discrimination between Anatase and Rutile Types of Titanium Dioxide

TEM-EELS enables elemental identification and chemical state analysis in micro-regions.

Titanium dioxide (TiO2), used in electronic materials, catalytic materials, ultraviolet absorbers, and photocatalysts, exists in two forms with the same composition but different crystal structures: anatase and rutile. We conducted measurements on a polycrystalline TiO2 sample with a thickness of 20 nm, deposited on a Si substrate (Photo 1), using an electron beam probe focused down to approximately 1 nmΦ (FWHM). The EELS spectra obtained from the sample match the standard spectra of anatase TiO2 for both Ti and O (Figures 1 and 2).

  • Contract Analysis

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Focused Ion Beam Processing Observation Device [Examples of Processing Available]

Focused Ion Beam Processing Observation Device [Examples of Processing Available]

Nano-order processing technology with a few microns or less! Low-damage processing (high precision and high quality) is possible with ultra-low acceleration voltage!

【PR Points】 - Ultra-fine hole processing of φ1um or smaller is possible - Fine structure processing is possible ...etc 【Principle of Focused Ion Beam (FIB) Processing】 By scanning a focused ion beam, concentrated to a few tens of nanometers, across the surface of a sample, secondary electrons generated can be detected, allowing for the observation of microscopic images and processing of the sample surface. The ion source of the FIB uses gallium ions, and when this ion beam is irradiated onto the surface of the sample, secondary electrons are generated from the sample surface. Additionally, since gallium ions are much heavier than electrons, a phenomenon known as sputtering occurs, where atoms constituting the sample are ejected. These ejected atoms become secondary ions and fly away from the sample. By utilizing these phenomena, observation and processing are performed. 【Specifications】 - Maximum work size: 50(X)×50(Y)×10(Z)mm - Minimum processing size (guideline): Groove width: 100nm (up to L/D=3), Hole diameter φ200nm (up to L/D=5) - High-speed and large-area processing with high probe current - Low-damage processing with ultra-low acceleration voltage (for TEM sample preparation, etc.) *Examples and achievements of processing are currently available. For more details, please contact us or download the catalog to view.

  • Processing Contract

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Surface analysis X-ray photoelectron spectroscopy (ESCA・XPS)

Surface analysis X-ray photoelectron spectroscopy (ESCA・XPS)

We provide contract analysis services equipped with devices for physical analysis, and we also offer on-site analysis.

The main equipment includes "HR-TEM," "Q-pole type SIMS," "μESCA," and "RAMAN." We have accumulated know-how in micro and nano-level surface analysis, allowing us to provide highly reliable data in a short period. We also offer advice on the analysis of unknown samples. 【Surface Analysis: X-ray Photoelectron Spectroscopy (ESCA/XPS)】 ○ A method that identifies elements and analyzes composition and chemical bonding states by analyzing the energy of photoelectrons emitted from the surface of a sample when irradiated with X-rays, from a depth of a few nanometers. ○ It is suitable for surface analysis of insulators and allows for depth analysis using Ar ion etching and localized analysis with a beam diameter of 10 μm. ● For more details, please download the catalog or contact us.

  • Food Testing/Analysis/Measuring Equipment

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Fine structure analysis | TEM/STEM (Transmission Electron Microscopy Analysis)

Fine structure analysis | TEM/STEM (Transmission Electron Microscopy Analysis)

Nano to angstrom resolution! Observation of fine morphology and composition analysis at the atomic level.

TEM/STEM is an analytical method that uses an electron beam to image samples. The spatial resolution of TEM/STEM is approximately 1 to 2 Å. High-energy electrons (80 to 200 keV) can penetrate electron-transparent samples (up to about 100 nm thick). While the spatial resolution of TEM/STEM is superior to that of SEM, it often requires complex sample preparation. Additionally, in recent years, the introduction of AC-STEM (STEM with spherical aberration-corrected lenses) has enabled higher resolution analysis compared to conventional STEM. EAG Laboratories owns more than 20 TEM/STEM instruments and over 30 FIB-SEM systems for sample preparation. We also have multiple EDS/EELS systems for elemental analysis. With a sufficient number of facilities for analysis, we can always respond to TEM/STEM analysis requests with short turnaround times (standard delivery: 6 to 8 business days / expedited delivery: upon inquiry).

  • Electron microscope
  • Contract Analysis
  • Contract measurement

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Diotec Semiconductor AG Company Profile

Diotec Semiconductor AG Company Profile

Active in a highly competitive market for over 40 years! We provide customized solutions.

Our affiliated company, Diotec Semiconductor AG, specializes in semiconductor diodes and rectifiers. We provide customized solutions tailored to the configuration of semiconductor chips, packages, and leads. We have been active in this highly competitive market for over 40 years. Please feel free to contact us when needed. 【Products Offered】 ■ Semiconductor Diodes ■ Rectifiers * You can download the English version of the catalog. * For more details, please refer to the PDF materials or feel free to contact us.

  • Contract manufacturing

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
Kenic system's LCD controller

Kenic system's LCD controller

"Easy and Useful" is our policy.

【Features】 ・Externally, it seems like a dedicated IC. ・therefore, it can quickly support the discontinuance of the LCD or specificaitons change. ・The image frame buffer appears to be SRAM from Host-CPU, therefore software disign is easy. ・「Direct connection to the Host-CPU with 8bit」and there is a complete, one-to-one correlation between the mapping coordinates of the pixels and addresses as seen from the Customer’s CPU. ・Power supply is a 3.3V single power supply.

  • controller

Added to bookmarks

Bookmarks list

Bookmark has been removed

Bookmarks list

You can't add any more bookmarks

By registering as a member, you can increase the number of bookmarks you can save and organize them with labels.

Free membership registration
COPYRIGHT © 2001-2025 IPROS CORPORATION ALL RIGHTS RESERVED.