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The amorphous alumina film created by ion assist deposition is an ultra-dense oxygen barrier film with a uniform fine structure where the crystal particles are below 50 nm. It is transparent from the visible light to ultraviolet regions, making it suitable for various applications.

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In the dry etching process, which is one of the semiconductor manufacturing processes, when wafer processing is performed, phenomena occur where products from the process gas itself and by-products during etching adhere to the chamber inner walls and the surfaces of parts inside the chamber. The adhesion of these deposits changes the surface state of the chamber before and after processing, leading to fluctuations in the process conditions. To mitigate such fluctuations in process conditions, conventional techniques have applied a method (aging) to stabilize the chamber inner surface state by processing similar wafers before product processing to coat the deposits. The Y5O4 F7 film has a smaller change in surface fluorine content before and after plasma treatment compared to the Y2O3 film, which significantly shortens the aging time of the etching equipment and contributes to increased equipment operating time.

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The YOF film (yttrium fluoride film) produced by the ion-assisted deposition method not only reduces particles and significantly increases equipment operating time as a protective film for dry etching equipment parts, but it can also greatly shorten the aging time that was previously required. In today's world, where semiconductor shortages are a problem, improving yield and increasing equipment operating time are paramount for semiconductor manufacturers. The protective film created by the ion-assisted deposition method, introduced in cutting-edge manufacturing lines, can be used as a protective film for dry etching equipment parts and for regeneration during regular maintenance.

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This is an introduction to the use of high corrosion-resistant Y2O3 film (yttrium oxide film) and YOF film (yttrium fluoride film) with high plasma resistance as protective films for internal materials of etching equipment, utilizing ion-assisted deposition methods. The miniaturization of semiconductors is progressing rapidly. The competition in semiconductor manufacturing hinges significantly on yield and equipment operating time. Protective films for etching equipment components have traditionally used yttrium oxide films created by thermal spraying or aerosol deposition. However, since etching equipment etches silicon wafers while simultaneously etching the equipment itself, the particles generated have become a problem for manufacturing yield, making these methods unsuitable for advanced processes. Yttrium oxide films produced by ion-assisted deposition are much denser compared to those created by thermal spraying or aerosol deposition, offering significant advantages at the particle level. Additionally, this dense film can be deposited in thicker layers compared to sputtering, which can greatly improve equipment operating time.

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We would like to introduce Tsubasa Vacuum Research Co., Ltd.'s "High Corrosion-Resistant Y2O3 (Yttrium Oxide) Film." Using our unique ion-assisted deposition method, we can achieve a highly adhesive and dense thick film of 15μm on alumina substrates and 10μm on quartz glass. The application is a protective film for dry etcher components that is resistant to plasma. If you are looking for a good film for dry etcher component deposition, please feel free to consult with us. 【Features】 ■ Achieves half the market price of the regeneration of RF windows for etching equipment ■ Significantly improves the maintenance cycle of etching equipment ■ Superior plasma resistance and corrosion resistance compared to films formed by thermal spraying, aerosol deposition, and ion plating *For more details, please refer to the PDF materials or feel free to contact us.

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• Etching Equipment