Siconnex Japan(サイコネックス ジャパン) Product Lineup

This 4-chamber system is characterized by its ability to achieve excellent process results by combining mixed chemicals at the time of use with a patented retainer comb treatment system. By using SicOzone instead of peroxides or sulfuric acid for sustainable processes such as cleaning and resist stripping, it can reduce the consumption of chemicals and deionized water by up to 90%. By continuously supplying new chemicals to the chamber, it eliminates processing variations due to bath liquid degradation, enabling stable high-precision processes. 【Features】 ■ For wet etching, resist stripping, and cleaning processes ■ Throughput of up to 600 wph ■ Four process chambers ■ Installation area of less than 12 m² ■ Chemicals used at low concentrations until depleted ■ No need for sulfuric acid or peroxides *For more details, please refer to the PDF document or feel free to contact us.

Our semi-automatic device stands out for its high performance, efficient chemical recirculation, minimal installation area, and optimized space efficiency. 【Features】 ■ Throughput of up to 150 wph ■ Uniformity with less than 1% variation ■ Installation area of less than 2 m² ■ Chemical recirculation through a tank system ■ Process executable with SiC/GaN ■ Usable with chambers for 25 or 50 wafers ■ Extractable process chamber *For more details, please refer to the PDF document or feel free to contact us.

Our process integration solutions aim to streamline the wet processes in semiconductor manufacturing. Traditionally, wet etching, resist stripping, cleaning, and drying processes are often performed using individual equipment, which affects production efficiency and yield due to transportation between processes. Siconnex's batch spray system "BATCHSPRAY" allows for the use of multiple types of chemicals within a single chamber, enabling continuous processing of several wet processes without moving the wafers. This leads to reduced process time, space savings, and lower contamination risks. 【Features】 - Continuous processing of multiple wet processes in one chamber - Supports up to 8 types of process chemicals - Reduced contamination risk by minimizing wafer transport - Improved throughput through consolidated drying processes - Efficient use of space with a compact footprint design Additionally, it can be combined with ozone water processes (SicOzone) and organic solvent processes, allowing for the development of processes that consider reduced chemical usage and environmental impact. *For more details, please download the PDF document or feel free to contact us.*

This document is a technical material proposing the "perc" process. Anisotropic dry etching is performed while forming a protective film, such as a polymer, to protect the sidewalls. Traditionally, cleaning has been done using dedicated organic solvent-based cleaning solutions, but this practice has started to be avoided due to safety and environmental concerns. 【Contents】 ■ Introduction ■ Process Overview ■ "perc" Cleaning Performance ■ Application to Plasma Dicing ■ Conclusion *For more details, please download the PDF or feel free to contact us.

This document is a technical explanation regarding "BATCHSPRAY." Since it is specialized in wafer processing, it enables appropriate processes in various situations. It is noted that when considering the reactivity of the substrate surface, it is important to take into account the presence of the boundary layer. 【Contents】 ■ Introduction ■ Advantages of the Batch Spray System ■ Comparison with Other Systems ■ Conclusion *For more details, please download the PDF or feel free to contact us.

This document contains information about the benefits of "SicOzone." Ozone is known as a very strong oxidizing agent and is effective in the oxidative decomposition of organic substances. It is stated that it can be discharged after use with minimal environmental impact. [Contents] ■ Introduction ■ Overview of Cleaning and Resist Stripping Processes using Ozone ■ Benefits of SicOzone ■ Conclusion *For more details, please download the PDF or feel free to contact us.