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SOS wafers are wafers on which silicon is epitaxially grown on the R-plane of sapphire substrates. They are used in various devices such as pressure sensors and are characterized by their high resistance to radiation. We can offer SOS wafers in sizes of 3 inches (76mm), 4 inches (100mm), and 6 inches (150mm). Depending on the specifications, we may also be able to accommodate 8-inch wafers, so please feel free to inquire. The dopant for the epitaxial layer is Phosphorous for N-type and Boron for P-type. We can accommodate small quantities as well.

• Other semiconductors
• Processing Contract
• Wafer

Advantages of Neutron Activation Analysis 1) Analysis can be performed with a small amount of sample (approximately a few mg to a few g). 2) A wide range of analyzable concentrations, from ppm or ppb (standard is ppm) levels to several tens of percent. 3) High precision (uncertainty: standard 4-5%). 4) Does not depend on the physical shape or chemical state of the analyzed elements; standardization of the same matrix composition is unnecessary. Analyzable Elements A) Elements that require long irradiation for analysis: Ag, As, Au, Ba, Br, Ca, Ce, Cd, Co, Cr, Cs, Er, Eu, Fe, Ga, Ge, Gd, Hf, Hg, Ho, Ir, K, La, Lu, Mo, Nb, Nd, Os, Pd, Pr, Pt, Rb, Re, Ru, Sb, Sc, Se, Sm, Sn, Sr, Ta, Tb, Te, Th, Tm, U, W, Yb, Zn, Zr B) Elements that can be analyzed with short irradiation: Al, Ca, Cl, Cu, Dy, I, In, Mg, Mn, Na, Rh, Ti, V C) DNAA method (short irradiation): U ◎ For more details, please refer to the PDF document.

• Contract measurement

Advantages of Neutron Activation Analysis 1) Analysis can be performed with a small amount of sample (approximately a few mg to a few g). 2) A wide range of analyzable concentrations, from ppm or ppb (standard is ppm) levels to several tens of percent. 3) High precision (uncertainty: standard 4-5%). 4) Does not depend on the physical shape or chemical state of the analyzed elements; standardization of the same matrix composition is unnecessary. Analyzable Elements A) Elements requiring long irradiation for analysis: Ag, As, Au, Ba, Br, Ca, Ce, Cd, Co, Cr, Cs, Er, Eu, Fe, Ga, Ge, Gd, Hf, Hg, Ho, Ir, K, La, Lu, Mo, Nb, Nd, Os, Pd, Pr, Pt, Rb, Re, Ru, Sb, Sc, Se, Sm, Sn, Sr, Ta, Tb, Te, Th, Tm, U, W, Yb, Zn, Zr B) Elements that can be analyzed with short irradiation: Al, Ca, Cl, Cu, Dy, I, In, Mg, Mn, Na, Rh, Ti, V C) DNAA method (short irradiation): U ◎ For more details, please refer to the PDF document.

• Contract measurement

Advantages of Neutron Activation Analysis 1) Analysis can be performed with a small amount of sample (approximately a few mg to a few g). 2) A wide range of analyzable concentrations, from levels in ppm or ppb (standard is ppm) to several tens of percent. 3) High precision (uncertainty: standard 4-5%). 4) Not affected by the physical shape or chemical state of the analyzed elements; standardization of the same matrix composition is unnecessary. Analyzable Elements A) Elements requiring long irradiation time for analysis: Ag, As, Au, Ba, Br, Ca, Ce, Cd, Co, Cr, Cs, Er, Eu, Fe, Ga, Ge, Gd, Hf, Hg, Ho, Ir, K, La, Lu, Mo, Nb, Nd, Os, Pd, Pr, Pt, Rb, Re, Ru, Sb, Sc, Se, Sm, Sn, Sr, Ta, Tb, Te, Th, Tm, U, W, Yb, Zn, Zr B) Elements that can be analyzed with short irradiation time: Al, Ca, Cl, Cu, Dy, I, In, Mg, Mn, Na, Rh, Ti, V C) DNAA method (short irradiation): U ◎ For more details, please refer to the PDF document.

• Contract measurement

Cosmo Ferrite Co., Ltd. was founded in 1986 and has established itself as a leading soft ferrite manufacturer in the Indian soft ferrite market. It obtained ISO 14001 in 2004 and ISO 9001 in 2008. 【Features】 ■ Customizable according to application ■ Obtained ISO 14001 in 2004 and ISO 9001 in 2008 ■ Capable of noise reduction ■ Achieves high quality at low prices! *For more details, please contact us or download the catalog.

• cable
• transformer
• Other electronic parts

At Cosmo Ferrite Co., Ltd., we import high-quality materials that are stably supplied and manufacture manganese-zinc ferrite. Our products are widely used not only in India but also in Europe. If winding is required, we can accommodate this through our related companies in India. **Strengths of Cosmo Ferrite Co., Ltd.:** * Quick response to prototypes and custom products * Equipped with in-house R&D facilities, capable of tool development * Over 500 types of ferrite cores with different shapes and grades * Certified with ISO9001, ISO14001, and ISO/TS16949 * Compliant with EU RoHS Our products are used in lighting fixtures, transformers for UPS/inverters, induction heating devices, high-frequency transformers, EMI filters, and EMC countermeasure choke coils, among others. **Main Specifications:** Shapes: Ring (toroidal) UU (horizontal) (vertical) EE, EI, I, EC, ETD, EER, EFF, EVD, EP, PQ, PM, POT, ROD, PLANAR Initial permeability: Up to a maximum of 10,000 μiac For more details, please contact us or refer to our catalog.

• cable
• transformer
• Other electronic parts

【Products Offered】 * We handle various semiconductor wafers such as CZ, FZ, diffusion wafers, SiC, SOI, EPI, GaAs, SiGe, GaSb, sapphire, germanium, and more. * Prime test monitor bare wafers (high precision wafers, particle check products, COP countermeasures, etc.) * SOI wafers: High-resistance device layers, substrates can also be accommodated, and it is possible to process supplied wafers into SOI wafers. * We also handle non-particle-controlled dummy wafers (coin rolls). * Various processing services: film formation, grinding (possible below 30μm), dicing, edge chamfering, size reduction, patterning, silicon and compound semiconductor wafer reclamation, re-cleaning, measurement and analysis services, etc. We also handle various processed products of single crystal/multicrystal silicon and synthetic quartz. Please inquire about compound semiconductors and various electronic materials, wafer cases, trays, dicing tapes, and other peripheral products. We will search for products that meet specifications from both domestic and international sources. We can also process wafers purchased from other companies and deliver them.

• Other semiconductors

Gas-doped FZ silicon is FZ silicon that has been doped with impurities by pulling a single crystal in a dopant gas. Our company can provide high-quality, high-purity FZ silicon. Currently, due to its low level of contaminants, FZ silicon is widely used not only in existing memory and DSP ICs but also in the fields of MEMS and optoelectronic sensors. Please contact us for more details. ★Prime Grade FZ ingot (available for immediate delivery) A manufacturer's Certificate of Compliance (CofC) will be provided upon delivery. Specifications: Orientation: (1-1-1) ± 2 deg. Diameter (mm): 101.60 ± 0.20 Length (mm): 200 - 400 First Orientation Flat (mm): 30.5 - 34.5 (1-10) +/- 1 Deg. Second Orientation Flat (mm): N.A. Type: N-type/Phosphorus Lifetime (microsec): 1000 Resistivity (ohm cm) at 25°C: 2032.00 Resistivity Tolerance (ohm cm): ±700.00 RRV [%]: N.A.

• Other semiconductors
• Wafer

NTD silicon (neutron-irradiated silicon) excels in the uniformity of resistivity in the plane and is used as a power thyristor (silicon-controlled rectifier), widely utilized in semiconductor power devices across various industries from general industry to home appliances. Currently, FZ silicon is widely used not only in existing ICs such as memory and DSPs due to its low level of contaminants but also in the fields of MEMS and optoelectronic sensors. For more details, please contact us.

• Other semiconductors
• Wafer

The diameter ranges from approximately 30 mm to 8 inches, featuring high lifetime, low oxygen, and low carbon, with the capability to accommodate ultra-high resistance wafers exceeding 10,000 Ω. FZ wafers for sensors are used in particle inspection machines and IR inspection machines, while FZ wafers for high-power devices are used in thyristors and IGBTs, and FZ wafers for medium voltage are utilized in IGBTs and diodes. *Prime Grade FZ ingots (available for immediate delivery) A Certificate of Conformance (CofC) with actual measurement values will be provided upon delivery. Processing into wafers is also possible. Specifications: Finish: as ground Orientation: (1-1-1) ± 2 deg. Diameter (mm): 101.60 ± 0.20 Ingot length (mm): 200 - 400 First OF (mm): 30.5 - 34.5 (1-10) +/- 1 Deg. Second OF (mm): N.A. Type: N-type Lifetime (microsec): 1000 Resistance value (ohm cm) at 25°C: 2032 ± 700.00 RRV [%]: N.A. *Multiple pieces are in stock.

• Other semiconductors
• Processing Contract
• Wafer

In addition to SOI using CZ silicon, we can also provide SOI wafers using high-resistivity FZ silicon for both the substrate and device layers. Diameter: 3 inches to 12 inches SOI layer: approximately 2-200 µm (high resistivity options available, such as over 10,000 Ω) SiO2 (oxide film) layer: approximately 0.5-2 µm (options available from 0.1-10 µm) Support substrate: approximately 300-725 µm (depending on diameter, high resistivity options available, such as over 10,000 Ω) *Depending on specifications, new orders can be accommodated starting from about 10 pieces. *It is also possible to process wafers provided by you into SOI wafers. Enatech handles a wide range of silicon wafer-related products and responds quickly and accurately to customer requests. We primarily sell evaluation test wafers and film deposition wafers for semiconductor and solar cell manufacturers (as well as contract processing such as regeneration), and in the field of dummy wafers, we have two warehouses in Japan for the sorting process of Si, allowing us to introduce various types of wafers to meet customer needs. For more details, please contact us.

• Other semiconductors
• Processing Contract
• Wafer

Our company handles monitor wafers and dummy wafers for semiconductor manufacturing equipment testing, as well as monocrystalline silicon wafers for solar cells, polycrystalline wafers for solar cells, SOI wafers, diffusion wafers, and more. We will introduce suitable wafers according to your application. CZ wafers are available in diameters ranging from less than 1 inch to 450 mm. We can also perform EPI film deposition on wafers you have or process them into SOI wafers. In addition to CZ wafers, we also offer high-resistivity FZ wafers from less than 4 inches to 8 inches, with resistance values ranging from a few ohms to over 10,000 ohms. We also handle sapphire, germanium, compound semiconductors, and polycrystalline silicon. Please contact us for more details.

• Other semiconductors
• Processing Contract
• Wafer

Enatec Co., Ltd.'s CZ wafer film deposition processing can accommodate film deposition on wafers ranging from 2 inches to 450 mm, depending on the type of film. Oxide films: thermal oxidation, RTO, LP-TEOS, HDP-USG, P-TEOS, PSG, BPSG, BSG, LP-CVD, PE-CVD Nitride films: HCD-SiN, DCS-SiN, P-SiN, LP-SiN, LP-CVD, PE-CVD Metal films: TaN, Ta, Cu, Al, AlN, Al-Si, Al-Si-Cu, Ni, W, W-Si-Cu Others: Poly-Si, a-Si, SiC, Low-k (SiOC-based, organic chemistry-based), graphene films, graphite * Depending on the type of film, such as SiO2, SiN, SiON, we can accommodate from one piece. * We can also handle Ti, Cu, Cr, Ni, etc., through sputter deposition. * Resist coating/exposure/etching can be accommodated from 4 inches to 12 inches. * We can also provide consistent support for wafers with test patterns (from 6 inches to 12 inches) based on specifications. * We accept exposure/etching with provided reticles (8 inches and 12 inches). For more details, please contact us.

• Other semiconductors
• Processing Contract
• Wafer

"Epi-Wafer" 1. It is used for discrete devices and IC power devices. * Diameter: 100-200 mm * Epi layer dopants: Boron, Phosphorous * Epi layer resistance value: 0.01-500 Ω/cm * Epi thickness: 1-150 um * Stacking fault: Below 10 /cm2 * Thickness Uniformity: 1% * Resistivity Uniformity: 2.5% (resistance 0.1-20 Ohm.cm) / 3% (resistance >20 Ohm.cm) * Minimum of 25 pieces "Epi Contract Processing" We can also accommodate wafers with high Epi resistance exceeding 1000 ohm cm, or wafers with thick Epi layers. Multi-layer Epi deposition can also be supported depending on specifications. Features - Small lots (from a few pieces to 25 pieces) are possible for experimental use - Sub-wafers can be specified (customers can also provide sub-wafers) - Epi thickness tolerance: within 6-10% (varies with Epi thickness) - Resistance uniformity tolerance: within 5-15% (varies with resistance)

• Other semiconductors
• Processing Contract
• Wafer