日本エンギス Product Lineup

The precision double-sided wrapping machine EJD-6BY is particularly suitable for wrapping materials that require strict parallelism.

In power devices such as SiC (silicon carbide) and GaN (gallium nitride), which are expected to see market expansion in the future, cost reduction is an important issue. Among these, we would like to introduce a processing case that achieved cost reduction through a method different from conventional processing processes. [Polishing Results] ■ Surface roughness < 0.5nm (subsequent process CMP) ■ TTV < 2μm / Warp < 10μm ■ Achieved double-sided grinding of SiC by using the high-speed pressure grinding machine 'EJD-6BY' and the fixed grinding stone 'MAD Plate'. *For more details, please refer to the PDF document or feel free to contact us.

The substrates such as SiC (silicon carbide), GaN (gallium nitride), and PCD (sintered diamond), which are expected to expand in the market in the future, are difficult materials to process due to their hard and brittle nature. Among them, we would like to introduce a case study that achieved the polishing of sintered diamond, which is particularly challenging to process. [Polishing Results] ■ Surface roughness < 3nm ■ Processing time 4 hours (processing time with conventional methods 10 hours) ■ By using the high-speed high-pressure polishing machine 'EJW-400HSP' and the fixed grinding stone 'MAD Plate', we achieved a reduction in processing time by 6 hours. *For more details, please refer to the PDF document or feel free to contact us.

The EBM-250HC is a device designed and developed for the bonding process of wafers and bonding plates (ceramic plates). It can be used before and after the lapping process to achieve high precision in the thickness, flatness, warpage, and parallelism of the wafers.

The EBM-250HSC is a device designed and developed for the bonding process of wafers and bonding plates (ceramic plates). It can be used before and after the lapping process to achieve high precision in wafer thickness, flatness, warpage, and parallelism.