一般財団法人材料科学技術振興財団　MST Product Lineup

By measuring the sample, it is possible to evaluate the crystal structure through the combination of results obtained and simulations. This document introduces a case study in which the crystal structure is discussed by comparing the results obtained from HAADF-STEM and EDX measurements on polycrystalline neodymium magnets with simulated images using the respective measurement conditions. The combination of measurement results and computational simulation results allows for a deeper understanding of the crystal structure.

Perovskite solar cells have excellent conversion efficiency in a film form and can be manufactured at low cost, leading to active research and development towards practical application. TOF-SIMS (Time-of-Flight Secondary Ion Mass Spectrometry) is effective for component analysis of the HTM layer (hole transport layer), evaluation of main components, dopants, and the depth distribution of impurities. This document presents a case study of depth analysis from the HTM layer to the perovskite layer. Measurement method: TOF-SIMS Product field: Solar cells Analysis purpose: Identification, distribution evaluation For more details, please download the document or contact us.

Perovskite solar cells are composed of various types of organic materials depending on their purpose and role. This document presents an example of qualitative analysis of organic materials using LC/MS. By utilizing high-resolution MS spectra and MS/MS spectra, we were able to identify hole transport materials and additives in the hole transport layer. It is also possible to quantify the identified materials by comparing between samples or using standard samples. Measurement method: LC/MS Product field: Solar cells Analysis purpose: Composition evaluation and identification For more details, please download the document or contact us.

Environmental Testing Evaluates the resistance of electronic components and devices when subjected to environmental stress. Reliability Evaluation Testing Assesses items related to the reliability and safety of the product.

In HAXPES, hard X-rays (Ga radiation) are used for excitation, which results in different positions of the Auger peaks compared to the Al and Mg radiation typically used in standard XPS measurements. Therefore, even in samples where the photoelectron peaks and Auger peaks overlap in Al and Mg measurements, this overlap can be avoided in Ga measurements, allowing for a detailed evaluation of the bonding states. This document presents the spectra of Kovar (an alloy of Fe, Ni, and Co) and GaN measured using Ga radiation (equipped with HAXPES) and Al and Mg radiation (equipped with XPS).

High-resolution HAADF-STEM images reflect the atomic arrangement of crystals, and by simulating STEM images corresponding to various crystal orientations, they help in accurately understanding the relative orientations between crystal grains and the observed images in polycrystalline materials. This document presents a case where STEM images were simulated from the crystal orientation information obtained by the EBSD method for the crystal grains in a polycrystalline neodymium magnet, and compares them with actual high-resolution HAADF-STEM images.

Perovskite solar cells are expected to be the next generation of solar cells due to their lightweight and flexible characteristics. They contain organic structures, halogens, and metals, and the variations in their composition and crystallinity lead to changes in their properties, which is considered one of the challenges in the research and development of perovskite solar cells. In this study, we evaluated the differences in photoluminescence (PL) spectra and luminescence lifetimes between the normal and abnormal areas of perovskite solar cells subjected to high-temperature and high-humidity testing using PL measurement and fluorescence lifetime measurement devices.

Our organization offers evaluation of the direct current voltage dependence of carriers in semiconductors. SMM measurement is a technique that can map the concentration of carriers in semiconductors. Additionally, it is possible to apply a direct current voltage to the sample during SMM measurement to induce carriers while measuring. Mapping measurements are conducted while acquiring SMM signals under different applied voltage conditions at each measurement point, constructing a data cube. After collecting all data, analyzing the SMM signals according to the applied voltage conditions allows us to visualize the behavior of carriers in response to the applied voltage. [Measurement Method / Processing Method] ■ [SMM] Scanning Microwave Microscope Method *For more details, please download the PDF or feel free to contact us.

Our organization conducts analyses of the thermal decomposition reactions of ionic liquids using quantum chemical calculations. Since ionic liquids are often used at high temperatures for extended periods, understanding their reactivity, such as thermal decomposition, is essential. We will introduce examples of evaluating the likelihood of thermal decomposition reactions of ionic liquids through quantum chemical calculations. 【Measurement Methods and Processing Methods】 ■Computational Science, AI, Data Analysis *For more details, please download the PDF or feel free to contact us.

Our organization conducts product degradation investigations through weather resistance testing. The Sunshine Weather Meter can artificially reproduce sunlight, temperature, humidity, and other conditions. We conducted weather resistance testing standards for bicycle lights and examined changes over time. To quantitatively discuss the discoloration of lights that are originally black, we refer to (JIS D 0205) and present a case study evaluating color difference and glossiness. 【Measurement Methods and Processing Methods】 ■Others ■Weather Resistance Testing *For more details, please download the PDF or feel free to contact us.

Our organization conducts an analysis of defect levels in wide bandgap semiconductor gallium nitride (GaN) using first-principles calculations. Gallium nitride (GaN), a wide bandgap semiconductor, is primarily used in the field of power devices, and in recent years, there has been an increasing demand for applications such as rapid chargers and 5G communication base stations. Here, we present a case study analyzing the defect levels formed by nitrogen vacancies (VN) in GaN using first-principles calculations. [Measurement and Processing Methods] ■ [PL] Photoluminescence Method ■ Computational Science, AI, Data Analysis *For more details, please download the PDF or feel free to contact us.

We have completely renewed our homepage. In this renewal, we have revamped the design and structure to make it more user-friendly and comfortable for everyone, while enhancing the information provided. ◆ Key Points of the Renewal - Improved accessibility to information We have reviewed the common navigation across all pages and improved the menu structure to make it easier to understand. The structure allows for intuitive access to the necessary information. - Comfortable viewing in all environments In addition to PCs, we have made the site compatible with various viewing environments, including smartphones and tablets. You can enjoy a comfortable experience regardless of location or device. - Enhanced visual design for better visibility We have reviewed the overall color scheme and layout of the site, refreshing it to a more understandable and sophisticated design. ▼ You can view it here https://www.mst.or.jp/ We would be grateful if you could take a look. We will continue to strive for further enhancement of our content, and we appreciate your continued support.

■ A consistent system that accompanies you until resolution and diverse analytical approaches We provide consistent support from hearing about the issues to reporting, collaboratively leading to optimal solutions through dialogue. With over 100 types of analytical methods and AI analysis, we cover challenges across all domains, responding to the trust that "MST is reliable" with flexible responses and proven results. ■ Abundant technical skills and experience We cater to a wide range of needs, from advanced analysis in existing fields like semiconductors to custom analysis in new areas. We have achievements in unique technologies such as the first domestic commercialization of FIB-TEM and SSDP-SIMS. ■ Fairness and reliability Since 1984, during the era when semiconductors took the world by storm, we have walked alongside the forefront of manufacturing. We maintain a fair and neutral stance, building solid trust through quality management based on ISO 9001. ■ Optimal problem-solving through AI analysis We propose solutions tailored to objectives and challenges through equipment analysis, AI analysis, and simulation. By maximizing the use of customer-owned data and designing and constructing custom AI models, we aim to generate results that meet specific needs. For inquiries regarding analysis and consultation, please feel free to contact us.