一般財団法人材料科学技術振興財団　MST Product Lineup

Our organization conducts an analysis of defect levels in wide bandgap semiconductor gallium nitride (GaN) using first-principles calculations. Gallium nitride (GaN), a wide bandgap semiconductor, is primarily used in the field of power devices, and in recent years, there has been an increasing demand for applications such as rapid chargers and 5G communication base stations. Here, we present a case study analyzing the defect levels formed by nitrogen vacancies (VN) in GaN using first-principles calculations. [Measurement and Processing Methods] ■ [PL] Photoluminescence Method ■ Computational Science, AI, Data Analysis *For more details, please download the PDF or feel free to contact us.

TOF-SIMS analysis allows for detailed examination of the sample's outermost surface, as well as the ability to obtain information in the depth direction, making it possible to understand the distribution of components within the material. Additionally, imaging can visualize the spatial distribution of components. This document includes case studies of products analyzed from various fields. Please feel free to contact us!

ALD (Atomic Layer Deposition) is a method that allows for uniform film formation at the atomic layer level, even for high aspect ratio structures, and is being focused on as a useful technique for the miniaturization, integration, and fine wiring of semiconductors. Since it is a vapor-phase deposition method that utilizes the "adsorption saturation of precursors on the growth surface," high vapor pressure precursors are required to improve the coverage rate of precursors on the substrate and the deposition rate. This document predicts the vapor pressures of various Ga-containing precursors through molecular dynamics calculations and compares them with experimental values.