一般財団法人材料科学技術振興財団　MST List of Products and Services

ALD (Atomic Layer Deposition) is a method that allows for uniform film formation at the atomic layer level, even for high aspect ratio structures, and is being focused on as a useful technique for the miniaturization, integration, and fine wiring of semiconductors. Since it is a vapor-phase deposition method that utilizes the "adsorption saturation of precursors on the growth surface," high vapor pressure precursors are required to improve the coverage rate of precursors on the substrate and the deposition rate. This document predicts the vapor pressures of various Ga-containing precursors through molecular dynamics calculations and compares them with experimental values.

Vacuum devices that utilize the characteristic of low gas molecular density in a space are used in various applications such as thin film formation and surface analysis in the manufacturing process of electronic components. Since the chamber of a vacuum device is a closed space, the presence of trace amounts of molecules can easily cause contamination within the device. To suppress contamination, it is necessary to conduct investigations to identify contamination sources such as pumps, devices, and samples. This document presents a case study investigating contamination within a vacuum device using TOF-SIMS.