☆★☆★【nanoCVD-WGP】Wafer-scale graphene/carbon nanotube synthesis device ☆★☆★

Plasma CVD equipment compatible with wafer sizes Φ3 inch and Φ4 inch. Rapid synthesis of clean, high-quality graphene while suppressing impurities. Usable with both thermal CVD and low to high temperature plasma CVD methods. The configuration can be customized according to requirements, including mass flow gas supply systems and substrate heating heaters.
【Example of equipment configuration】
- Substrate: Cu, Ni, etc. (film, foil)
- Raw materials: CH4, C2H4, solids (PMMA), etc.
- Process gases: H2, Ar, N2, etc.
- Substrate size: Φ4 inch
- 150W, 13.56MHz RF power supply
- Substrate heating from 500℃ to Max 1100℃
- High precision process gas pressure APC control
- Mass flow controller with a maximum of 4 channels


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Thermal CVD/Plasma CVD equipment compatible with wafer sizes
Substrate size: Φ3inch or Φ4inch
◉ Model. nanoCVD-WG (Thermal CVD)
◉ Model. nanoCVD-WGP (Plasma CVD)
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