6 to 8 inch ultra-high temperature wafer annealing equipment, a high-performance machine that widely accommodates various purposes from research and development to small-scale production.
◾️ Max 2000℃ ◾️ Effective heating range: Φ6 to Φ8 inch single leaf type, or batch type (multi-stage 5-sheet cassette) ◾️ Heater control: 1 zone or 2 zones (cascade control) ◾️ Heater materials: ・C/C composite: Φ6 to Φ8 inch ・PG coating high-purity graphite: Φ6 to Φ8 inch ◾️ Operating atmosphere: ・Vacuum (1x10-2Pa), inert gas (Ar, N2) ◾️ PLC semi-automatic operation ・Automatic sequence control for vacuum/purge cycle and venting ・Full automatic operation (optional) ・Touch panel operation, allowing centralized management without dispersed control. ◾️ Process pressure control ・APC control (MFC flow, or automatic opening adjustment valve PID loop control) ・Maximum 3 systems of MFC flow automatic control, or manual adjustment of float meter/needle valve ◾️ PLOT screen graph display, CSV data output
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basic information
A dedicated ultra-high temperature wafer annealing furnace focusing on safety and operability for "wafer baking." ◆ Main Specifications ◆ - Insulation materials: Graphite felt, tungsten, molybdenum, alumina, zirconia, etc. (*Varies depending on furnace design) - Chamber opening and closing: Top loading, linear drive operation (or manual opening and closing with damper) - Achievable vacuum level: 1x10-2 Pascal (in the case of an empty furnace) - Vacuum pump: Dry scroll pump - Vacuum gauge: Wide-range vacuum gauge from atmospheric pressure to 10-9 mbar - Thermocouple: Type C thermocouple (Type K may be used depending on design temperature conditions) - Interlock: Chamber over-temperature, heater over-temperature, cooling water cutoff, chamber opening and closing, vacuum level - Power supply: 200V, 50A (*Varies by specification) 3-phase - Cooling water: 8L/min, 0.4Mpa - Dimensions (body): 1240(W) x 590(D) x 1160(H) mm ◆ Options ◆ - Additional thermocouple for measuring temperature inside the crucible - High vacuum pump (turbo molecular pump) - Front view port - Full auto control - Substrate rotation stage - Communication function (using temperature control function) or SECS/GEM communication
Price information
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Delivery Time
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Applications/Examples of results
◆Main Application Areas◆ - High-temperature annealing during crystal growth and device fabrication processes of wide bandgap semiconductors - High-temperature annealing during the epitaxial growth process of nitride semiconductor crystals - Development of new materials - Application in various advanced materials fundamental development
Detailed information
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CC Composite Heater Element Standard adoption of CC Composite Heater Element - Standard compatible with Φ2 inch, Φ4 inch, Φ6 inch, and Φ8 inch - Single Zone or Dual Zone control (*2 inch is Single Zone only)
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Example of a wafer holder for 8-inch (can accommodate 7 pieces of 2-inch wafers). We can create wafer holders in specified shapes and materials upon request.
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PID Digital Temperature Controller Standard Model - Eurotherm nanodaq series
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Top-loading chamber
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Company information
【Endless possibility_thermal engineering...】 Our company sells vacuum thin film devices for semiconductor and electronic device fundamental research, ultra-high temperature heaters for CVD substrate heating, experimental furnaces, temperature measurement equipment, and more. To meet the endless demand for "heat," which is indispensable in any era, and to respond to various requests in the field of fundamental technology development, we aim to introduce the latest equipment and contribute to research and development in Japan.