[Hot Stage] Ultra High Temperature Substrate Heating Stage Max 1800℃

4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

This is a flexible thin film experimental device for R&D that eliminates waste by integrating the necessary minimum modules and controllers into a 19" compact rack with a Plug & Play feel, achieving compact size, space-saving design, simple operation, and high cost performance. It supports magnetron sputtering (up to 3 sources) or resistance heating evaporation (metal sources up to 2, organic materials x4), and can also be equipped with a substrate heating stage, allowing for the production of annealing devices and RF etching. There is also a glove box storage type available (specifications to be discussed). We offer a wide range of optional components that can be flexibly customized. ◉ Φ2 inch magnetron cathode (up to 3 sources) ◉ Resistance heating evaporation source filament, crucible, boat type (up to 4 poles with automatic switching via controller) ◉ Organic evaporation cell: 1cc or 5cc ◉ Glove box compatible (optional, specifications to be discussed) ◉ Other options: simultaneous film deposition, HiPIMS, automatic film deposition controller, custom substrate holders, load lock, substrate rotation/heating/cooling, and many more options available. *Please first contact us with your required specifications, and we will configure the system to meet your needs.

This is a flexible thin-film experimental device for R&D that achieves minimal waste, compact size, simple operation, and high cost performance by integrating the necessary minimum modules and controllers into a 19" compact rack with a Plug&Play feel. It supports magnetron sputtering (up to 3 sources) or resistance heating evaporation (metal sources up to 2, organic materials x4), and can be equipped with a substrate heating stage, allowing for the production of annealing devices and RF etching. A glove box storage type is also available (specifications to be discussed). We offer a wide range of optional components that can be flexibly customized. ◉ Φ2 inch magnetron cathode (up to 3 sources) ◉ Resistance heating evaporation source filament, crucible, boat type (up to 4 poles with automatic switching via controller) ◉ Organic evaporation cell: 1cc or 5cc ◉ Can be equipped with a glove box (optional, specifications to be discussed) ◉ Other options: Simultaneous film deposition, HiPIMS, automatic film deposition controller, custom substrate holders, load lock, substrate rotation/heating/cooling, and many other options available. *Please first contact us with your required specifications, and we will configure the system according to your needs.

4 cathodes with Φ2 inch mounted Simultaneous film formation: 3-component simultaneous film formation (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed from the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coat) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.