【Grinding Process Material】Composite Material Grinding Process

Our company is capable of polishing compound semiconductor crystals. We can accommodate a wide range of processing, from small quantities to mass production, not limited to standard products.

In the case of compounds, unlike silicon oxides, they are very soft materials, and it is said to be difficult to thin them out. However, at Japan Exceed, we have made it possible to finish thinned compound wafers that have already been patterned, and we can accommodate delivery methods for our customers. We obtained a patent in 1996 for the "development of mirror polishing using abrasives that do not contain bromine." We cater to a wide range of needs, from small quantities to mass production, not limited to standard products. We perform ultra-smooth polishing of SiC single crystals used in power devices, as well as GaN single crystals used in laser diodes and high electron mobility transistors (HEMT) to achieve high recording density. We also process the backside of patterned wafers to thin them out. 【Processing Details】 ■ Processing Materials - SiC - GaN - GaP - GaAs - GaSb - ZnS - ZnSe - ZnTe - Backside processing of patterned wafers, etc. ■ Finished Thickness: 20μm and above ■ Surface Roughness Performance Value: GaP Surface Roughness: 0.1nm *For more details, please download the materials or contact us.

WaferdiodeContract manufacturing