Crystal Defect Inspection Device "EnVision"

Non-destructive/non-contact! Detection and monitoring of expansion defects inside wafers at the nm scale is possible.

"En-Vison" is a crystal defect inspection device that can non-contact and non-destructively measure and evaluate crystal defects within wafers, such as dislocation defects, oxygen precipitates, and stacking faults. It provides a high dynamic range for both defect size (15nm to sub-micron) and density (E6 to E10/cm3). By significantly improving detection sensitivity in the depth direction of the wafer and covering a wide range of densities and applications, it greatly enhances the detection sensitivity of stress-induced dislocation defects in the depth direction, which cannot be confirmed near the surface, compared to conventional methods. 【Features】 ■ Non-destructive / Non-contact ■ Visualizes defects that cannot be confirmed by conventional inspection devices ■ Target area: Active device area (near the surface) ■ Detection in raw silicon and at the depth of active devices ■ No specialized knowledge required *For more details, please refer to the related link page or feel free to contact us.

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