Suitable for substrates such as CMOS! The wafer remains a stable substrate even when exposed to diffusion processes at 1200°C.
Ice Moss Technology has developed an innovative and powerful internal interconnection technology for wafers. These serve as a means to solve packaging issues related to designs such as ICs and MEMS. This internal interconnection solution makes design easier and provides a way to facilitate wafer-level packaging, such as solder bump contacts. 【Features】 ■ Suitable for substrates like CMOS ■ The internal interconnection areas are etched into the wafer, with doped polysilicon embedded ■ The wafer maintains surface metal contamination standards and flatness, with particle levels meeting industry standards ■ The wafer remains stable even when subjected to a 1200°C diffusion process *For more details, please refer to the PDF document or feel free to contact us.
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basic information
【Specifications】 ■ Aspect ratio of vias (through holes): <15:1 ■ Wafer diameter: 100mm & 150mm ■ Wafer thickness: 300-525μm ■ Maximum diameter: 40μm (at minimum side) ■ Minimum pitch: 90μm (three times the via width) ■ Poly resistivity: <5mΩ-cm ■ Isolation resistance value: dependent on oxide liner (design dependent) ■ Oxide film thickness: 0.2-2μm *For more details, please refer to the PDF document or feel free to contact us.
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Applications/Examples of results
【Applications】 ■ SOI solutions for MEMS/MST ■ Microfluidics/Flow sensors ■ RF MEMS ■ Optoelectronics ■ Smart power ■ Advanced analog ICs *For more details, please refer to the PDF document or feel free to contact us.
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Company information
Our company was established in 2004 as a best-in-class supplier providing high-voltage power MOSFETs and MEMS technology processes that deliver high performance for power supplies, advanced technology base wafers, SOI (silicon on insulator), and bonded silicon substrates at a high cost-effectiveness. (Headquartered in the U.S., with manufacturing facilities in the U.K. and R&D in Tokyo) We have developed and realized high-voltage super junction MOSFETs with innovative deep trench etching MEMS structures through a simple and low-cost process. Please feel free to contact us if you have any inquiries.
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