SOI and Silicon Silicon bonded wafer

Proposal for semiconductor manufacturing: We offer cost-effective materials as alternatives to traditional thick epitaxy and inverted epitaxy for IC and MEMS applications.

【SOI Wafer】: (Silicon-On-Insulator) We supply SOI wafers with a device layer of thick film of 100-200mm or thin film of less than 1um. Features: ■ Covers a wide range of fields such as optical engineering surface acoustic wave filters, including silicon wafers and thermal oxide films. ■ IceMOS provides world-class product quality while continuously improving through process management based on Six Sigma statistical control methods. ■ Offers sufficiently competitive costs and flexible responses. 【Silicon-Silicon Bonding】: Low leakage, high quality, minimal warping, and low defect density! Offered as a cost-effective material. Using direct wafer bonding technology, it is possible to create silicon substrates that include various single-crystal silicon. Resistance range: 1mΩ-cm to 10kΩ-cm Features: ■ N and P-type materials, orientation direction can be arranged. ■ Low leakage, high quality, minimal warping, low defect density. ■ Thickness variation < +/-0.5um. ■ Transition levels from high concentration to low concentration can be adjusted sharply or softly.

Wafer