[High corrosion-resistant Y2O3/YOF film case] As a protective film for etching equipment parts.

Far superior in corrosion resistance and plasma resistance compared to protective films created by thermal spraying or aerosol deposition! Yttrium oxide produced by a unique ion-assisted deposition method.

This is an introduction to the use of high corrosion-resistant Y2O3 film (yttrium oxide film) and YOF film (yttrium fluoride film) with high plasma resistance as protective films for internal materials of etching equipment, utilizing ion-assisted deposition methods. The miniaturization of semiconductors is progressing rapidly. The competition in semiconductor manufacturing hinges significantly on yield and equipment operating time. Protective films for etching equipment components have traditionally used yttrium oxide films created by thermal spraying or aerosol deposition. However, since etching equipment etches silicon wafers while simultaneously etching the equipment itself, the particles generated have become a problem for manufacturing yield, making these methods unsuitable for advanced processes. Yttrium oxide films produced by ion-assisted deposition are much denser compared to those created by thermal spraying or aerosol deposition, offering significant advantages at the particle level. Additionally, this dense film can be deposited in thicker layers compared to sputtering, which can greatly improve equipment operating time.

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