Control of ion density by ICP power! Achieving low-temperature film formation, low damage, and high conformality.
The "SI 500 D" is an ICPECVD that controls ion density using ICP power. With a high plasma density of 10^12 [ions/cm3] achieved by the unique PTSA200ICP source, it enables low-temperature film deposition, low damage, and high conformality. Please feel free to consult us when you need assistance. 【Features】 ■ Control of ion density using ICP power ■ Control of ion energy with optional bias power ■ Optimization of the process through reactor pressure, separated gas supply lines, and adjustment of the spacing between the ICP source and substrate electrode *For more details, please refer to the PDF materials or feel free to contact us.
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