Control of ion density by ICP power! Achieving low-temperature film formation, low damage, and high conformality.
The "SI 500 D" is an ICPECVD that controls ion density using ICP power. With a high plasma density of 10^12 [ions/cm3] achieved by the unique PTSA200ICP source, it enables low-temperature film deposition, low damage, and high conformality. Please feel free to consult us when you need assistance. 【Features】 ■ Control of ion density using ICP power ■ Control of ion energy with optional bias power ■ Optimization of the process through reactor pressure, separated gas supply lines, and adjustment of the spacing between the ICP source and substrate electrode *For more details, please refer to the PDF materials or feel free to contact us.
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Our company website features information on used equipment related to FPD and semiconductors. ● Main Business Activities Purchase of used semiconductor manufacturing equipment, refurbishment, sales, and setup operations Construction and consulting for semiconductor manufacturing lines Purchase of used FPD manufacturing equipment, refurbishment, sales, and setup operations Construction and consulting for FPD manufacturing lines Contract development, manufacturing, and sales of semiconductor manufacturing equipment and FPD manufacturing equipment Sales of various equipment parts Agency sales of overseas manufactured equipment
