The electrical properties and film quality of the SiO2 film on the Si substrate were investigated in detail for each deposition method.
The technical information magazine The TRC News provides the latest information on analytical techniques useful for research and development, solving production troubles, and quality control. **Abstract** Using mercury probes (Hg-Probe) and various physical analysis methods, we investigated in detail the relationship between the electrical properties and film quality of SiO2 films deposited on Si substrates using different methods. Compared to thermally oxidized SiO2 films, SiO2 films deposited by chemical vapor deposition (CVD) were found to have higher moisture and hydroxyl group content, and lower order in the SiO2 network structure, as revealed by RBS, XPS, FT-IR, and SIMS. C-V measurement results using Hg-Probe showed that SiO2 films deposited by plasma CVD have a high positive charge density, while those deposited by ozone CVD exhibit a high density of mobile charges, and it was confirmed that there is a correlation between moisture content and relative permittivity. I-V measurements also indicated that the leakage current of SiO2 films deposited by ozone CVD, which have high moisture content, is significant. Additionally, C-V measurements combined with wet etching confirmed that SiO2 films deposited by plasma CVD have a spread in charge distribution near the interface. **Table of Contents** 1. Introduction 2. Experiment 3. Results and Discussion 4. Conclusion
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Technical Information Magazine The TRC News "Electrical Property Evaluation of SiO2 Films Using Mercury Probes and Correlation Analysis of Electrical Properties and Film Quality" 【Abstract】 Using mercury probes (Hg-Probe) and various physical analysis methods, we investigated in detail the relationship between the electrical properties and film quality of SiO2 films deposited on Si substrates using different methods. Compared to thermally oxidized SiO2 films, SiO2 films deposited by chemical vapor deposition (CVD) exhibited higher moisture and hydroxyl group content, and lower order in the SiO2 network structure, as revealed by RBS, XPS, FT-IR, and SIMS. C-V measurement results using Hg-Probe indicated that SiO2 films deposited by plasma CVD have a high positive charge density, while those deposited by ozone CVD have a high density of mobile charges, and it was confirmed that there is a correlation between moisture content and relative permittivity. I-V measurements also showed that the leakage current of SiO2 films deposited by ozone CVD, which have high moisture content, is significant. Additionally, C-V measurements combined with wet etching confirmed that SiO2 films deposited by plasma CVD have a spread in charge distribution near the interface. 【Table of Contents】 1. Introduction 2. Experiment 3. Results and Discussion 4. Conclusion Data is shown in Figures 1-9.
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