There is a track record of growing nitride semiconductor crystals on various semiconductor substrates. Customization is also possible according to your requests.
We offer nitride semiconductor crystal growth based on LED structure growth technology using MOCVD equipment, tailored to our customers' needs. Additionally, we are actively engaged in the prototype development of our unique crystal growth.
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basic information
Growth Achievements (Partial) ■LED Structure (Emission Wavelength 380–560nm) ■Nitride DBR ■GaN Selective Growth Crystalline Films That Can Be Grown ■GaN ■AlN ■AlGaN ■GaInN ■AlInN Dopants ■Mg ■Si
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Company information
Our company, E&E Evolution Co., Ltd., is a startup originating from Meijo University located in Nagoya City, Aichi Prefecture. We conduct contract processing and research based on fundamental research related to nitride-based LED devices cultivated in the university's semiconductor laboratory, leveraging our strengths in technology and know-how derived from various processing techniques. We can handle multiple processes, including fine processing on semiconductor wafers, growth of nitride semiconductor crystals, and device process fabrication, as well as individual processes related to semiconductor manufacturing such as metal film deposition, dry etching, substrate dicing, and polishing. Additionally, we are striving to establish ourselves as a company developing innovative light sources and systems, pursuing the potential of semiconductors through research and development, and challenging ourselves to create technologies that can change the world.
