Plasma CVD device for thick film formation. High speed and low stress (patent pending).
● The adoption of a unique self-bias method enables high-speed (3000-5000 Å/min) and low-stress film deposition. (Patent pending) ● Low-temperature film deposition is possible at room temperature to about 350°C. Additionally, film deposition on plastics is feasible. ● Unique modifications in the reaction chamber help suppress particle generation. ● The LS-CVD method using liquid source TEOS allows for excellent step coverage and filling effects in film deposition. ● Arbitrary control of the refractive index is possible using liquid sources of Ge, P, and B. In addition to the standard one series, it is possible to add two more series of dopant introduction systems as options.
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basic information
The PD-270STP is a low-temperature, high-speed plasma CVD device for forming silicon oxide films (SiO2) using liquid source TEOS. The high sheath electric field on the cathode side allows for the formation of silicon oxide films, ranging from thin to thick, with low stress.
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Applications/Examples of results
● Manufacturing of optical components such as optical waveguides ● Mask formation for micromachines ● Formation of protective films for plastic materials ● Coating on high aspect ratio steps
Company information
We excel in the technology of thin film formation and processing at the nano to micro level, and we are well-regarded for providing equipment and technology for both research and development applications as well as production purposes. Additionally, we specialize in the optoelectronics field, particularly in light sources (LEDs and semiconductor lasers), which are expected to see market expansion in the future.
