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Transistor Product List and Ranking from 22 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Nov 05, 2025～Dec 02, 2025
This ranking is based on the number of page views on our site.

Transistor Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Nov 05, 2025～Dec 02, 2025
This ranking is based on the number of page views on our site.

  1. オーエン Saitama//Electronic Components and Semiconductors
  2. Axuas Co., Ltd. Aichi//Consumer Electronics
  3. 一般財団法人材料科学技術振興財団　MST Tokyo//Testing, Analysis and Measurement
  4. 4 イサハヤ電子 Osaka//Electronic Components and Semiconductors
  5. 5 null/null
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Transistor Product ranking

Last Updated： Aggregation Period:Nov 05, 2025～Dec 02, 2025
This ranking is based on the number of page views on our site.

  1. Power transistor alternatives and second-source products Axuas Co., Ltd.
  2. 【TOSHIBA：TD62593AFNG(5.EL)】 オーエン
  3. Introduction to EPC Space's GaN-on-Si【Space】 ジェピコ 本社、大阪支店、名古屋支店、練馬支店
  4. [Analysis Case] Evaluation of Two-Dimensional Electron Gas Layer in Normally Off GaN HEMT 一般財団法人材料科学技術振興財団　MST
  5. 4 CoolGaN 600V

Transistor Product List

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Introduction to EPC Space's GaN-on-Si【Space】

Introduction to EPC Space's GaN-on-Si【Space】

Achieving smaller and lighter circuits for important space missions!

EPCSpace is a joint venture between EPC, a leading company in GaN-on-Si power devices, and VPT, which provides DCDC converters for aerospace applications. It offers Rad Hard GaN-on-Si transistor solutions for satellites and high-reliability applications. It addresses critical environments in space for applications such as power/light detection and ranging (LiDAR), motor drive, and ion thrusters. 【Products】 ■ Rad Hard GaN Packaged Discretes ・https://epc.space/products/gan-discretes/ ■ Rad Hard GaN on Ceramic Adaptor ・https://epc.space/products/rad-hard-gan-die-on-ceramic-adaptor/ ■ Rad Hard GaN Drivers and Power Stages ・https://epc.space/products/drivers-and-power-stages/ *For more details, please refer to the related links or feel free to contact us.

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  • converter

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『LMG5200』

『LMG5200』

Fully integrated 80V GaN half-bridge power module 'LMG5200'

The LMG5200 device incorporates a GaN half-bridge power stage with an 80V, 10A driver and can be used in integrated power stage solutions utilizing enhancement-mode Gallium Nitride (GaN) FETs. This device consists of two 80V GaN FETs driven in a half-bridge configuration by a single high-frequency GaN FET driver. GaN FETs have nearly zero reverse recovery time and very low input capacitance (CISS), providing significant advantages in power conversion. All devices are mounted on a package platform that uses no bond wires, minimizing parasitic elements in the package. The LMG5200 device is supplied in a lead-free package measuring 6mm × 8mm × 2mm, making it easy to mount on PCBs. 【Features】 ■ Low power consumption ■ Ideal for isolated/non-isolated applications ■ Integrates one 80V 10A driver and two 80V 15mΩ GaN FETs ■ Gate driver capable of switching up to 10MHz *For more details, please contact us.

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  • Other power sources

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High-frequency high-power transistor

High-frequency high-power transistor

Support for discontinued products! ASI manufactured high-power transistors.

◆HF Applications RF Power Transistors The HF series for wideband amplifiers outputs stable signals in the range of 2-30 MHz. ◆VHF Applications RF Power Transistors A lineup of power transistors for VHF applications. ◆UHF Applications RF Power Transistors A lineup of power transistors for UHF applications. ◆Aerospace Electronics RF Power Transistors A lineup of pulse transistors for aerospace electronic equipment. ◆Pulse Radar RF Power Transistors Transistors for pulse radar are available in a range from long to short pulse widths. ◆CW Microwave RF Power Transistors A lineup of power transistors for continuous wave applications in the GHz range. ◆Broadcast Station RF Power Transistors Achieves high linearity required for TV broadcasting transmitters. *For more details, please contact us through the request for materials.

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  • Transistor

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RF high-power transistors for aerospace use

RF high-power transistors for aerospace use

RF high-power transistors for aerospace applications

Introducing our lineup of pulse transistors for avionics. Frequency: 1,025 - 1150MHz Advanced Semiconductor, Inc. (ASI) in the United States is a manufacturer of RF power transistors and high-frequency diodes. We offer a wide range of original products that are manufactured indefinitely, as well as components aimed at replacing products from other companies. Specifically, our RF power transistors include alternatives primarily based on products from Motorola, Philips, and STMicroelectronics (formerly SGS Thomson). If you encounter discontinued or hard-to-find components during new designs, please contact us. We may be able to design the desired circuit without the need for time-consuming design changes.

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  • transformer

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[Analysis Case] Evaluation of the Diffusion Layer Distribution of a Transistor (MOSFET)

[Analysis Case] Evaluation of the Diffusion Layer Distribution of a Transistor (MOSFET)

Evaluation of diffusion layers in specific areas using SCM.

This is an introduction to a case study of SCM analysis of commercially available LSI internal MOSFETs. First, the cross-section of a specific transistor is exposed through mechanical polishing. At this time, the Si surface is polished flat to the order of nm. The SCM image allows for the two-dimensional confirmation of layer distribution. While quantitative discussions cannot be made, it is possible to roughly understand the relationship of concentration magnitudes. Additionally, the p/n polarity of the diffusion layer can also be identified. Furthermore, by conducting SEM observations at the same location and performing image synthesis with the SCM analysis results, the positional relationship between the diffusion layer and the upper wiring structure can be clarified.

  • Other contract services

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[Analysis Case] Evaluation of High Electron Mobility Transistors

[Analysis Case] Evaluation of High Electron Mobility Transistors

Evaluation of crystal coherence and compositional distribution is possible with Cs collector attached STEM.

GaN-based high electron mobility transistors, known as GaN HEMTs (High Electron Mobility Transistors), achieve a two-dimensional electron gas layer through an AlGaN/GaN heterostructure, resulting in high electron mobility. This document presents a case study of the disassembly and evaluation of commercially available GaN HEMT devices. Using HAADF-STEM, we confirmed the crystallographic integrity near the AlGaN/GaN interface. Additionally, we assessed the compositional distribution using EELS. Measurement methods: TEM, EELS. Product field: Power devices. Analysis purpose: Structural evaluation, film thickness evaluation. For more details, please download the document or contact us.

  • Contract Analysis

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[Analysis Case] Evaluation of Two-Dimensional Electron Gas Layer in Normally Off GaN HEMT

[Analysis Case] Evaluation of Two-Dimensional Electron Gas Layer in Normally Off GaN HEMT

We can offer a one-stop solution for comprehensive analysis of product research.

GaN-based high electron mobility transistors, known as GaN HEMTs (High Electron Mobility Transistors), utilize an AlGaN/GaN heterostructure to achieve a two-dimensional electron gas layer (2DEG), resulting in high electron mobility. They are used in applications such as fast chargers, leveraging these characteristics. This document presents the disassembly and evaluation of normally-off GaN HEMT devices. We will introduce a case study that employs a combination of analytical methods to gather comprehensive insights about the samples. Measurement methods: SIMS, TEM, SCM, SMM. Product field: Power devices. Analysis objectives: Trace concentration measurement, shape evaluation, film thickness evaluation, structural evaluation, product investigation. For more details, please download the document or contact us.

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  • Contract Analysis
  • Contract measurement

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[Market Research Report] Global Market for Insulated Gate Bipolar Transistors

[Market Research Report] Global Market for Insulated Gate Bipolar Transistors

"Free samples" are currently available! Please check the application method from the [PDF download] button, or apply directly through the related links.

The market size for Insulated Gate Bipolar Transistors (IGBT) is expected to reach 14.2 billion USD by 2030, with a projected market growth of 6.3% CAGR during the forecast period. In 2022, the market reached a quantity of 91,869,500 units, achieving a growth of 22.9% from 2019 to 2022. Furthermore, the increasing adoption of Variable Frequency Drives (VFD) is also a significant driving factor for the market. VFDs, also known as inverters, utilize IGBTs for motor control and speed adjustment in various applications. Therefore, the rise in the adoption of Variable Frequency Drives is driving market growth.

  • Other services

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RF power transistor

RF power transistor

High-power transistors characterized by high output, high gain, and high efficiency with low noise are usable up to 1 GHz.

POINT NINE Co., Ltd. aims to provide the highest quality products in the RF power transistor market. Certified with MIL-Q-9858, MIL-I-45208, and ISO 9001:2000. High power transistors characterized by high output, high gain, and high efficiency with low noise are usable up to 1GHz, making them suitable for communication satellites, ECM transistors, radar radios, and more. 【Product Lineup】 ■ 28V RF MOSFETs ■ 12V RF MOSFETs *For more details, please refer to the PDF materials or feel free to contact us.

  • Transistor

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In-vehicle grade digital transistor

In-vehicle grade digital transistor

Introducing AEC-Q101 compliant digital transistors from the electric vehicle hub, China.

Our company, Aquas, handles various electronic components as a major domestic distributor for JSCJ. JSCJ is focusing on expanding its lineup of AEC-Q101 compliant products in addition to transistors, MOSFETs, diodes, and other components used in general applications. Please feel free to contact us. Example Part number: AD-DTC114ECA (SOT-23) *AD- prefix indicates consumer products (non-AEC-Q101 compliant). [About JSCJ] Jiangsu Changjing Technology Co., Ltd. (JSCJ) was established as a semiconductor manufacturing subcontractor (OSAT) for back-end processes (packaging and testing) and was spun off from Jiangsu Changjiang Electronics Technology Co., Ltd. (JCET), which is the third largest in the world (2017) in discrete semiconductor manufacturing. *Please feel free to request the latest datasheets from the manufacturer.

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UMH1N Dual Digital Transistor

UMH1N Dual Digital Transistor

Dual digital transistor in SOT-363 package with two built-in DTC124E.

Our company, Aquas, handles various electronic components as a major domestic distributor for JSCJ. We can also provide diodes and transistors that are no longer produced domestically! We accept sample requests, so please feel free to contact us. 【About JSCJ】 Jiangsu Changjing Technology Co., Ltd. (JSCJ) was established as a semiconductor manufacturing subcontractor (OSAT) specializing in the back-end processes (packaging and testing), spun off from Jiangsu Changjiang Electronics Technology Co., Ltd. (JCET), which is the third largest discrete semiconductor manufacturer in the world (as of 2017). *If you are looking for alternatives, please feel free to inquire.

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2SA1873 Dual Transistor (SOT-353)

2SA1873 Dual Transistor (SOT-353)

Many alternatives for dual transistors!

Our company, Aquas, handles various electronic components as a major domestic distributor for JSCJ. We can also provide diodes and transistors that are no longer produced domestically! We welcome sample requests, so please feel free to contact us. 【About JSCJ】 Jiangsu Changjing Technology Co., Ltd. (JSCJ) was established as a semiconductor manufacturing subcontractor (OSAT) for the back-end process (packaging and testing), spun off from Jiangsu Changjiang Electronics Technology Co., Ltd. (JCET), which is the third largest in the world (2017) for discrete semiconductor manufacturing. *If you are looking for alternatives, please feel free to inquire.

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  • Other electronic parts

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2SB1182 Bipolar Transistor (TO-252-2L)

2SB1182 Bipolar Transistor (TO-252-2L)

Second source products of Rohm transistors.

Our company, Aquas, handles various electronic components as a major domestic distributor for JSCJ. We have many alternatives for discrete items such as transistors and MOSFETs. Please feel free to contact us. Part number: 2SB1182 (TO-252-2L package) 【About JSCJ】 Jiangsu Changjing Technology Co., Ltd. (JSCJ) was established as a semiconductor manufacturing subcontractor (OSAT) for the back-end process (packaging and testing) and was spun off from Jiangsu Changjiang Electronics Technology Co., Ltd. (JCET), which is the third largest in the world (2017) in discrete semiconductor manufacturing. *Please feel free to request the latest datasheet from the manufacturer.

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  • Transistor

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2SA1225 Bipolar Transistor (TO-252-2L)

2SA1225 Bipolar Transistor (TO-252-2L)

Many alternatives for Toshiba transistors, starting with 2SA1225!

Our company, Aquas, handles various electronic components as a major domestic distributor for JSCJ. We have many alternatives for discrete items such as transistors and MOSFETs. Please feel free to contact us. Model number: 2SA1225 (TO-252-2L package) 【About JSCJ】 Jiangsu Changjing Technology Co., Ltd. (JSCJ) was established as a semiconductor manufacturing subcontractor (OSAT) for the back-end processes (packaging and testing) and was spun off from Jiangsu Changjiang Electronics Technology Co., Ltd. (JCET), which is the third largest in the world (2017) in discrete semiconductor manufacturing. *We can request the latest datasheet from the manufacturer, so please feel free to make a request.

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