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diode Product List and Ranking from 26 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Jul 23, 2025～Aug 19, 2025
This ranking is based on the number of page views on our site.

diode Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Jul 23, 2025～Aug 19, 2025
This ranking is based on the number of page views on our site.

  1. MHIパワーエンジニアリング Hyogo//Industrial Machinery 高砂事業部
  2. null/null
  3. null/null
  4. 4 鞍山雷盛電子 China//Electronic Components and Semiconductors
  5. 5 オプトロンサイエンス Tokyo//Optical Instruments
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diode Product ranking

Last Updated： Aggregation Period:Jul 23, 2025～Aug 19, 2025
This ranking is based on the number of page views on our site.

  1. Boundary control data diode for IoT in factories and medical operations OWCD. MHIパワーエンジニアリング 高砂事業部
  2. Reverse current prevention diode DKA40AA220
  3. High Voltage Resistance Backflow Prevention Diode DKA40BA300
  4. Production control, data diode for factory monitoring IoT OWCD3i MHIパワーエンジニアリング 高砂事業部
  5. 5 Nanoplus GmbH Fabry-Pérot Laser Diode

diode Product List

211～225 item / All 634 items

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Germanium Photodiode (Ge Photodiode)

Germanium Photodiode (Ge Photodiode)

GPD Corporation manufactures power and high-speed germanium transistors, diodes, and infrared photodetectors.

■Various sizes from small to large diameter: 100μm to 25mm ■Wavelength sensitivity range: 800nm to 1800nm ■High linearity: >10dBm ■Various lens options available: biconvex lenses, plano-convex lenses, and ball lenses ■Optical filters: density filters and bandpass filters ■Single and dual-stage electronic cooling available ■4-segment photodiode ■Dual-color (Si/Ge) sandwich photodiode ■Custom accessory packaging available: fiber pigtails, high-reliability pigtails, receptacles, and submounts ■Various packages: TO-46, TO-18, TO-5, TO-8, TO-9, BNC

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Ultraviolet Light Emitting Diode (UV-LED)

Ultraviolet Light Emitting Diode (UV-LED)

◆ UV LED (UV-LED) ◆ 308nm, 325nm, 340nm ◆ Skin treatment, resin curing, sensing

**Bare Chip** This is a high-quality bare chip manufactured with outstanding technology. There are three chip sizes available, and an option for a sub-mount specification can also be selected. - Small (500μm×500μm) bare chip, Medium (750μm×780μm) bare chip, Large (1000μm×1000μm) bare chip *Please inquire as we can also supply it with a sub-mount attached.* **To Metal Can** This is a robust high-reliability (hermetic) specification using a metal can. The diameters available are φ5mm and φ9mm, and you can choose the beam angle from 6° to 145° (full angle). **Hermetic SMD** This product features an industry-standard size SMD package of 3.5mm×3.5mm, equipped with a medium chip or a large high-power chip in the 10mW class. - Middle Power SMD (Medium: equipped with a 750μm×750μm chip), High Power SMD (Large: equipped with a 1000μm×1000μm chip)

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Si photodiode (TO package) (Si PD)

Si photodiode (TO package) (Si PD)

◆Driven under reverse bias conditions ◆Large diameter, square shapes also available ◆Low dark current ◆Silicon PIN photodiode ◆Peak wavelength approximately 940nm

■Spectral detection range: 400nm to 1100nm LD-PD has implemented an inspection system compliant with MIL-I-45208, and adheres to Telcordia test requirements (TA-NWT-00093) and MIL-STD-883 test methods. 【Parameters: Typical values, Symbols, Test conditions】 ● Round shape φ0.2 to φ8.0mm Detector size (mm): φ0.2, φ0.5, φ1, φ2, φ4, φ5, φ8 Response wavelength range (nm): 400 – 1100・λ Responsivity (A/W): 0.40, 0.45, 0.5, 0.5, 0.5, 0.5, 0.55・Re・VR=15V, λ=900nm Response time (nS): 2, 5, 6, 8, 15, 15, 25tr・VR=15V, RL=50Ω Dark current (nA): 1, 2, 3, 5, 12, 40, 60・ID・VR=15V Reverse voltage (V): 100・VB・IR=10μA Capacitance (pF): 0.8, 1.2, 2.0, 6, 20, 30, 70・Cj・f=1MHz, VR=15V Operating voltage (V): 0 to 15・VR Socket: Coaxial/TO-46/TO-5/TO-8 Saturation optical power: 0.3w/cm2

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SPO2 (arterial blood oxygen saturation) to photodiode (PD)

SPO2 (arterial blood oxygen saturation) to photodiode (PD)

■Wide active area ■High sensitivity ■Strong durability ■Wide angle ■Chip on PCB

◆Medical Sensors◆Various Optical Sensors◆Four Selectable Patterns This is a photodiode for receiving light to measure SPO2 (arterial blood oxygen saturation). These photodiodes are incorporated into and used in smartphones, smartwatches, and medical devices. SJ SYSTEM is a specialized manufacturer of technology for measuring SPO2 (arterial blood oxygen saturation) with pulse oximeters, and it manufactures and sells LED modules, PD modules, and reflection modules for SPO2. These products are used in the healthcare field and are utilized in smartphones and smartwatches.

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Silicon avalanche photodiode

Silicon avalanche photodiode

◆High-speed response ◆High bandwidth ◆Low noise ◆Low bias voltage ◆Hermetic TO package ◆Excellent sensitivity and high response device

◆Silicon Avalanche Photodiode ◆Usable with flat mirrors or ball lenses Silicon avalanche photodiodes utilize internal multiplication to achieve impact ionization gain. As a result, they are optimized series of high-response devices that exhibit excellent sensitivity. OSI offers several sizes of detectors that can be used with flat windows or ball lenses for fiber optic applications.

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InGaAs large active area photodiode

InGaAs large active area photodiode

◆Large active area ◆Ideal for confirming beam movement, etc. ◆Sensor applications

The FCI-InGaAs-QXXX series is an InGaAs photodiode with a large active area. OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics, and has been supplying OEM photodetectors for over 30 years. Based on years of experience, we provide products with excellent reliability and cost performance, utilizing efficient manufacturing know-how to meet the requirements of mass production.

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Si position sensor photodiode

Si position sensor photodiode

◆1D or 2D active area effect ◆Compatible with active area size and packaging ◆Position sensing

Segmented, the lateral effect PSD is available in one-dimensional or two-dimensional active areas. The size and packaging of the active area can be adapted to fit a wide range of applications. Since the lateral effect PSD is most suitable for measuring large lateral displacements, segmented detectors are typically used in beam null applications. OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics and has been supplying OEM photodetectors for over 30 years. Based on years of experience, we provide reliable and cost-effective products based on efficient manufacturing know-how that meets the requirements of mass production.

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InGaAs large-diameter photodiode

InGaAs large-diameter photodiode

◆Large diameter active area size ◆Wavelength range: 1100-1620nm ◆IR sensitivity detector

The FCI-InGaAs-XXX-X series with active area sizes of 1mm, 1.5mm, and 3mm are part of OSI Optoelectronics' IR sensitive detectors that have excellent responsiveness from 1100nm to 1620nm (also with weak signal sensitivity). OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics and has been supplying photodetectors as an OEM for over 30 years. Based on years of experience, they provide reliable and cost-effective products based on efficient manufacturing know-how that meets the requirements for mass production.

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Si high-speed photodiode

Si high-speed photodiode

◆High-speed silicon photodiode ◆Peak in the 800nm wavelength range ◆Specifications for high bandwidth applications (from 100Mbps to 1.25GHz)

High-speed silicon photodiodes have a peak in the 800nm wavelength range and are designed for high bandwidth applications (from 100Mbps to 1.25GHz). There are two types of photodiodes: 100Mbps to 622Mbps and 1.25Gbps. 【100Mbps / 622Mbps Photodiode】 The large effective area high-speed silicon detector series from OSI Optoelectronics is designed for short-distance data communication. 【850nm, 1.25 Gbps Photodiode】 The large effective area high-speed silicon PIN photodiode series from OSI Optoelectronics is designed for short-distance data communication at 850nm.

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[Problem Solving Case Study] Application Report (Vol. 41)

[Problem Solving Case Study] Application Report (Vol. 41)

Reduced thermal resistance by one-eighth and improved heat dissipation! Bypass diode for solar panels.

At Orinas Co., Ltd., we are always committed to providing "faster responses," "more accurate responses," and "excellent proposals" to meet our customers' needs, contributing to the creation of added value for our customers. In this report, we introduce case studies of problem-solving for our customers. If you are having trouble selecting electronic devices, please feel free to consult us. 【Case Study】 ■ Products adopted by the customer - A bypass diode for solar panels that reduces thermal resistance by one-eighth and improves heat dissipation. ■ Benefits for the customer - Improvement of heat generation issues. ■ Customer's product: Solar panels ■ Issues faced by the customer - High current flow, but the current products were causing significant heat generation, which was problematic. *For more details, please refer to the PDF document or feel free to contact us.

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Laser diode

Laser diode

Laser diode

First Sensor GmbH in Germany offers laser diodes with wavelengths ranging from 635 to 905 nm, available in both single and multi-mode options. Additionally, we provide photodiodes (PD) and avalanche photodiodes (APD) suitable for each laser diode, and we can offer proposals as a set.

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Infrared Light Emitting Diode KL857

Infrared Light Emitting Diode KL857

A high-power infrared light-emitting diode chip has been incorporated into a metal package!

The KL857 infrared light-emitting diode is an infrared LED that incorporates a high-output infrared LED chip into a metal package. It uses a high-output infrared LED (λp: 940nm) and has high performance and reliability in a TO-18 metal package. RoHS-compliant versions are also available. It is suitable for applications such as light sources for photo sensors and light sources for photoelectric switches. For more details, please contact us or refer to the catalog.

  • Sensors

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Nippon Chemical Industries NFCWJ108B-V3 (Rs020)

Nippon Chemical Industries NFCWJ108B-V3 (Rs020)

This is a high-reliability LED from Nichia Chemical with a rich variety of packages and characteristics.

The NFCWJ108B-V3 (Rs020) is an LED manufactured by Nichia Chemical, suitable for general-purpose lighting that requires color rendering, high efficiency, and long lifespan.

  • Chip type LED

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Nippon Chemical Industries NE2B757G

Nippon Chemical Industries NE2B757G

It is a high-reliability LED from Nichia Chemical with a rich variety of packages and characteristics.

NE2B757G is an LED manufactured by Nichia Chemical that is suitable for general-purpose lighting requiring color rendering, high efficiency, and long lifespan.

  • Chip type LED

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Nippon Chemical Industries NCSB219B-V1

Nippon Chemical Industries NCSB219B-V1

This is a high-reliability LED from Nichia Chemical with a rich variety of packages and characteristics.

NCSB219B-V1 is an LED manufactured by Nichia Chemical that offers a variety of color tones and light distributions, enabling proposals tailored to various characteristics.

  • Chip type LED

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